Defect-Free Mechanical Graphene Transfer Using n-Doping Adhesive Gel Buffer

In this paper, we model the electrical properties of germanium nanowires with a particular focus on physical mechanisms of electrical molecular sensing. We use the Tibercad software to solve the drift-diffusion equations in 3D and we validate the model against experimental data, considering a p-doped nanowire with surface traps. We simulate three different types of interactions: (1) Passivation of surface traps; (2) Additional surface charges; (3) Charge transfer from molecules to nanowires. By analyzing simulated I–V characteristics, we observe that: (i) the largest change in current occurs with negative charges on the surfaces; (ii) charge transfer provides relevant current changes only for very high values of additional doping; (iii) for certain values of additional n-doping ambipolar currents could be obtained. The results of these simulations highlight the complexity of the molecular sensing mechanism in nanowires, that depends not only on the NW parameters but also on the properties of the molecules. We expect that these findings will be valuable to extend the knowledge of molecular sensing by germanium nanowires, a fundamental step to develop novel sensors based on these nanostructures.

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Rational Surface Engineering of MXene@N-doping Hollow Carbon Dual-confined Cobalt Sulfides/Selenides for Advanced Aluminum Batteries

Journal of Materials Chemistry A ◽

10.1039/d1ta03465k ◽

2021 ◽

Author(s):

Long Yao ◽

Shunlong Ju ◽

Xuebin Yu

Keyword(s):

Surface Engineering ◽

Rational Surface ◽

Natural Abundance ◽

Multivalent Ions ◽

N Doping ◽

Hollow Carbon

Rechargeable aluminum batteries (RABs) based on multivalent ions transfer have attracted great attention due to their large specific capacities, natural abundance, and high safety of metallic Al anode. However, the...

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Metallic surface doping of metal halide perovskites

Nature Communications ◽

10.1038/s41467-020-20110-6 ◽

2021 ◽

Vol 12 (1) ◽

Author(s):

Yuze Lin ◽

Yuchuan Shao ◽

Jun Dai ◽

Tao Li ◽

Ye Liu ◽

...

Keyword(s):

Metal Ions ◽

Metallic Surface ◽

Grand Challenge ◽

New Device ◽

Surface Doping ◽

N Doping ◽

Halide Perovskites ◽

Heavily Doped ◽

Low Solubility ◽

Striking Contrast

AbstractIntentional doping is the core of semiconductor technologies to tune electrical and optical properties of semiconductors for electronic devices, however, it has shown to be a grand challenge for halide perovskites. Here, we show that some metal ions, such as silver, strontium, cerium ions, which exist in the precursors of halide perovskites as impurities, can n-dope the surface of perovskites from being intrinsic to metallic. The low solubility of these ions in halide perovskite crystals excludes the metal impurities to perovskite surfaces, leaving the interior of perovskite crystals intrinsic. Computation shows these metal ions introduce many electronic states close to the conduction band minimum of perovskites and induce n-doping, which is in striking contrast to passivating ions such as potassium and rubidium ion. The discovery of metallic surface doping of perovskites enables new device and material designs that combine the intrinsic interior and heavily doped surface of perovskites.

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Enhanced degradation of bisphenol A by mixed ZIF derived CoZn oxide encapsulated N-doped carbon via peroxymonosulfate activation: the importance of N doping amount

Journal of Hazardous Materials ◽

10.1016/j.jhazmat.2021.126363 ◽

2021 ◽

pp. 126363

Author(s):

Xingyu Fang ◽

Lu Gan ◽

Linjie Wang ◽

Han Gong ◽

Lijie Xu ◽

...

Keyword(s):

Bisphenol A ◽

Doping Amount ◽

N Doping ◽

Enhanced Degradation

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Ab Initio Calculation of Mechanical Properties of Stacking Fault in 3C-SiC: Effect of Stress and Doping

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.415 ◽

2012 ◽

Vol 717-720 ◽

pp. 415-418

Author(s):

Yoshitaka Umeno ◽

Kuniaki Yagi ◽

Hiroyuki Nagasawa

Keyword(s):

Mechanical Properties ◽

Ab Initio ◽

Density Functional ◽

Stacking Faults ◽

Single Layer ◽

Local Strain ◽

Density Functional Theory Calculations ◽

Stacking Fault ◽

Functional Theory ◽

N Doping

We carry out ab initio density functional theory calculations to investigate the fundamental mechanical properties of stacking faults in 3C-SiC, including the effect of stress and doping atoms (substitution of C by N or Si). Stress induced by stacking fault (SF) formation is quantitatively evaluated. Extrinsic SFs containing double and triple SiC layers are found to be slightly more stable than the single-layer extrinsic SF, supporting experimental observation. Effect of tensile or compressive stress on SF energies is found to be marginal. Neglecting the effect of local strain induced by doping, N doping around an SF obviously increase the SF formation energy, while SFs seem to be easily formed in Si-rich SiC.

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