ZnO Quantum Dot Decorated Zn2SnO4 Nanowire Heterojunction Photodetectors with Drastic Performance Enhancement and Flexible Ultraviolet Image Sensors

ACS Nano ◽  
2017 ◽  
Vol 11 (4) ◽  
pp. 4067-4076 ◽  
Author(s):  
Ludong Li ◽  
Leilei Gu ◽  
Zheng Lou ◽  
Zhiyong Fan ◽  
Guozhen Shen
2019 ◽  
Vol 12 (01) ◽  
pp. 1850090
Author(s):  
Zhou Liu ◽  
Zhuoyin Peng ◽  
Jianlin Chen ◽  
Wei Li ◽  
Jian Chen ◽  
...  

Cu2GeSe3 quantum dot is introduced to instead of non-toxic CuInSe2 as a sensitizer for solar cells, which is employed to enhance the photovoltaic performance. Cu2GeSe3 quantum dots with various sizes are prepared by thermolysis process, which are employed for the fabrication of quantum dot-sensitized solar cells (QDSSC) according to assembly linking process. The optical absorption properties of the Cu2GeSe3 quantum dot-sensitized photo-electrodes have been obviously enhanced by the size optimization of quantum dots, which are better than that of CuInSe2-based photo-electrodes. Due to the balance on the deposition quantity and charge transfer property of the quantum dots, 3.9[Formula: see text]nm-sized Cu2GeSe3 QDSSC exhibits the highest current density value and incident photon conversion efficiency response, which result in a higher photovoltaic conversion efficiency than that of CuInSe2 QDSSC. The modulation of Cu2GeSe3 QDs will further improve the performance of photovoltaic devices.


Author(s):  
Vladimir Pejovic ◽  
Epimitheas Georgitzikis ◽  
Jiwon Lee ◽  
Itai Lieberman ◽  
David Cheyns ◽  
...  

2016 ◽  
Author(s):  
Emanuele Mandelli ◽  
Zach M. Beiley ◽  
Naveen Kolli ◽  
Andras G. Pattantyus-Abraham

2019 ◽  
Vol 21 (7) ◽  
pp. 3970-3975 ◽  
Author(s):  
Shixin Chen ◽  
Yinglin Wang ◽  
Shuang Lu ◽  
Yichun Liu ◽  
Xintong Zhang

We employed a sol–gel method to prepare a CdS interlayer (CdS-SG) with a stoichiometric ratio and then fabricated QDSCs.


2015 ◽  
Vol 3 (33) ◽  
pp. 17091-17097 ◽  
Author(s):  
Jun Du ◽  
Xinxin Meng ◽  
Ke Zhao ◽  
Yan Li ◽  
Xinhua Zhong

The parasitic charge recombination processes between TiO2/QDs/electrolyte interfaces were effectively suppressed with the addition of polyethylene glycol (PEG) additive in polysulfide electrolyte, giving enhancement of PCE from 5.80% to 6.74% in the corresponding cell devices.


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