scholarly journals Room-Temperature Electron–Hole Liquid in Monolayer MoS2

ACS Nano ◽  
2019 ◽  
Vol 13 (9) ◽  
pp. 10351-10358 ◽  
Author(s):  
Yiling Yu ◽  
Alexander W. Bataller ◽  
Robert Younts ◽  
Yifei Yu ◽  
Guoqing Li ◽  
...  
Keyword(s):  
Room Temperature ◽  
Monolayer Mos2 ◽  
Electron Hole ◽  
Temperature Electron

Temperature Dependent Line-Shape of the Silicon Dangling Bond EPR-Resonance in Polycrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
N. H. Nickel ◽  
E. A. Schiff
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Dangling Bond ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Motional Narrowing ◽  
G Value ◽  
Electron Paramagnetic

AbstractThe temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropie g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHpp. In unpassivated poly-Si a pronounced decrease of ΔHpp is observed for temperatures above 300 K. At 384 K ΔHpp reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHpp decreases monotonically above 425 K. The decrease of ΔHpp is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 Å was estimated for unhydrogenated and H passivated poly-Si, respectively.

Pd Nanocluster/Monolayer MoS2 Heterojunctions for Light-Induced Room-Temperature Hydrogen Sensing

2021 ◽  
Author(s):  
Hien Duy Mai ◽  
Sangmin Jeong ◽  
Tri Khoa Nguyen ◽  
Jong-Sang Youn ◽  
Seungbae Ahn ◽  
...  
Keyword(s):  
Room Temperature ◽  
Monolayer Mos2 ◽  
Hydrogen Sensing

scholarly journals Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filtering

2021 ◽  
Author(s):  
Yuqing Huang ◽  
Ville Polojärvi ◽  
Satoshi Hiura ◽  
Pontus Höjer ◽  
Arto Aho ◽  
...  
Keyword(s):  
Spin Polarization ◽  
Electron Spin ◽  
Room Temperature ◽  
Electron Spin Polarization ◽  
Semiconductor Nanostructure ◽  
Temperature Electron ◽  
Spin Filtering

Room Temperature Electron Paramagnetic Resonance (EPR) Signal Storage

1969 ◽  
Author(s):  
D.A. Bozanic ◽  
D.C. Buck ◽  
F.H. Harris ◽  
R.E. Huber ◽  
D. Mergerian ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Room Temperature ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Epr Signal ◽  
Electron Paramagnetic

Long room-temperature electron spin lifetimes in highly doped cubic GaN

2010 ◽  
Vol 97 (6) ◽  
pp. 062101 ◽  
Author(s):  
J. H. Buß ◽  
J. Rudolph ◽  
T. Schupp ◽  
D. J. As ◽  
K. Lischka ◽  
...  
Keyword(s):  
Electron Spin ◽  
Room Temperature ◽  
Cubic Gan ◽  
Temperature Electron

A novel room temperature electron beam ion trap for atomic physics and materials research

2000 ◽  
Vol 161-163 ◽  
pp. 1123-1127 ◽  
Author(s):  
V.P Ovsyannikov ◽  
G Zschornack ◽  
F Großmann ◽  
O.K Koulthachev ◽  
S Landgraf ◽  
...  
Keyword(s):  
Electron Beam ◽  
Atomic Physics ◽  
Room Temperature ◽  
Ion Trap ◽  
Electron Beam Ion Trap ◽  
Materials Research ◽  
Temperature Electron
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