scholarly journals Novel Heteroleptic Tin(II) Complexes Capable of Forming SnO and SnO2 Thin Films Depending on Conditions Using Chemical Solution Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Seong Ho Han ◽  
Raphael Edem Agbenyeke ◽  
Ga Yeon Lee ◽  
Bo Keun Park ◽  
Chang Gyoun Kim ◽  
...  
2018 ◽  
Vol 649 ◽  
pp. 219-224 ◽  
Author(s):  
Aleksej Zarkov ◽  
Andrius Stanulis ◽  
Lina Mikoliunaite ◽  
Andrei N. Salak ◽  
Aivaras Kareiva

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 307
Author(s):  
Diana Griesiute ◽  
Dovydas Karoblis ◽  
Lina Mikoliunaite ◽  
Aleksej Zarkov ◽  
Andrei N. Salak ◽  
...  

In the present work, polycrystalline Bi0.67La0.33Fe0.5Sc0.5O3 thin films were synthesized using a simple and cost-effective chemical solution deposition process employing the spin coating technique. In order to check the feasibility of the fabrication of thin films on various types of substrates, the films were deposited on Pt-coated silicon, silicon, sapphire, corundum, fused silica and glass. Based on the results of thermogravimetric analysis of precursor and thermal stability study, it was determined that the optimal annealing temperature for the formation of perovskite structure is 600 °C. It was observed that the relative intensity of the pseudocubic peaks (001)p and (011)p in the XRD patterns is influenced by the nature of substrates, suggesting that the formed crystallites have some preferred orientation. Roughness of the films was determined to be dependent on the nature of the substrate.


Author(s):  
Sucheta Sengupta ◽  
Rinki Aggarwal ◽  
Yuval Golan

This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.


1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.


RSC Advances ◽  
2015 ◽  
Vol 5 (94) ◽  
pp. 76783-76787 ◽  
Author(s):  
H. L. Wang ◽  
X. K. Ning ◽  
Z. J. Wang

Au–LaNiO3 (Au–LNO) nanocomposite films with 3.84 at% Au were firstly fabricated by one-step chemical solution deposition (CSD), and their electrical properties were investigated.


2001 ◽  
Vol 688 ◽  
Author(s):  
H. Uchida ◽  
H. Yoshikawa ◽  
I. Okada ◽  
H. Matsuda ◽  
T. Iijima ◽  
...  

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.


2005 ◽  
Vol 52 (12) ◽  
pp. 902-906
Author(s):  
Wataru Sakamoto ◽  
Yukinobu Yura ◽  
Toshiaki Yamaguchi ◽  
Koichi Kikuta ◽  
Shin-ichi Hirano

2008 ◽  
Vol 461 (1-2) ◽  
pp. 326-330 ◽  
Author(s):  
N.L. Amsei Júnior ◽  
A.Z. Simões ◽  
L.S. Cavalcante ◽  
F. Moura ◽  
E. Longo ◽  
...  

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