Electrical Modulation of Exciton Complexes in Light-Emitting Tunnel Transistors of a van der Waals Heterostructure

Abstract The structural and electronic properties of two-dimensional (2D) SiAs2/GeAs2 van der Waals heterostructure (vdWH) and its applications are investigated by combing first-principles calculations and Silvaco Atlas simulations. The stable SiAs2/GeAs2 vdWH exhibits an indirect bandgap of 0.99 eV in type II band alignment for light detection and energy harvesting. The vdWH can exhibit a direct bandgap up to 0.66 eV by applying an appropriate electric field (Eext). Due to the Eext induced charge redistribution, its band alignment can be transformed from type II to type I for light-emitting. Further simulation shows that the band alignment of SiAs2/GeAs2 vdWH can be tuned back and forth between type II and type I by gate voltage in a single field-effect transistor for multiple functional applications. These results may be useful for applications of the SiAs2/GeAs2 heterostructure in future electronic and optoelectronic devices.

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Adjustable electronic and optical properties of BlueP/MoS2 van der Waals heterostructure by external strain: a first-principles study

Nanotechnology ◽

10.1088/1361-6528/ab978b ◽

2020 ◽

Vol 31 (37) ◽

pp. 375706 ◽

Cited By ~ 1

Author(s):

Fei Yang ◽

Junnan Han ◽

Le Zhang ◽

Xianhong Tang ◽

Zhenguo Zhuo ◽

...

Keyword(s):

Optical Properties ◽

First Principles ◽

Van Der Waals ◽

Electronic And Optical Properties ◽

First Principles Study ◽

Van Der Waals Heterostructure ◽

External Strain

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Misfit layer SnTiS3: An assemble-free van der Waals heterostructure SnS/TiS2 for lithium ion battery anode

Journal of Power Sources ◽

10.1016/j.jpowsour.2021.229712 ◽

2021 ◽

Vol 494 ◽

pp. 229712

Author(s):

Yue-E Huang ◽

Weilin Lin ◽

Chenguang Shi ◽

Li Li ◽

Kaiqing Fan ◽

...

Keyword(s):

Lithium Ion Battery ◽

Van Der Waals ◽

Lithium Ion ◽

Van Der Waals Heterostructure ◽

Battery Anode

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A first-principles study on the electronic and optical properties of a type-II C2N/g-ZnO van der Waals heterostructure

Physical Chemistry Chemical Physics ◽

10.1039/d1cp00122a ◽

2021 ◽

Vol 23 (6) ◽

pp. 3963-3973

Author(s):

Jianxun Song ◽

Hua Zheng ◽

Minxia Liu ◽

Geng Zhang ◽

Dongxiong Ling ◽

...

Keyword(s):

Optical Properties ◽

Dft Calculations ◽

First Principles ◽

Van Der Waals ◽

Band Alignment ◽

Type Ii ◽

Electronic And Optical Properties ◽

Direct Bandgap ◽

Van Der Waals Heterostructure ◽

Vdw Heterostructure

The structural, electronic and optical properties of a new vdW heterostructure, C2N/g-ZnO, with an intrinsic type-II band alignment and a direct bandgap of 0.89 eV at the Γ point are extensively studied by DFT calculations.

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