In Situ Mass Spectrometry Study on Surface Reactions in Atomic Layer Deposition of TiN and Ti(Al)N Thin Films

2002 ◽  
Vol 14 (1) ◽  
pp. 281-287 ◽  
Author(s):  
Marika Juppo ◽  
Antti Rahtu ◽  
Mikko Ritala
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Mass Spectrometry Study

In Situ Quadrupole Mass Spectrometry Study of Atomic-Layer Deposition of ZrO2Using Cp2Zr(CH3)2and Water

Langmuir ◽  
2005 ◽  
Vol 21 (16) ◽  
pp. 7321-7325 ◽  
Author(s):  
Jaakko Niinistö ◽  
Antti Rahtu ◽  
Matti Putkonen ◽  
Mikko Ritala ◽  
Markku Leskelä ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Quadrupole Mass ◽  
Quadrupole Mass Spectrometry ◽  
Layer Deposition ◽  
Mass Spectrometry Study

Atomic Layer Deposition of thin Films Using Sequential Surface Reactions

2000 ◽  
Vol 616 ◽  
Author(s):  
S. M. George ◽  
J.D. Ferguson ◽  
J.W. Klaus
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Surface Chemistry ◽  
Film Growth ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Single Element ◽  
Transmission Electron ◽  
Layer Deposition

AbstractThin films can be deposited with atomic layer control using sequential surface reactions. The atomic layer deposition (ALD) of compound and single-element films can be accomplished using the appropriate surface chemistry. This paper reviews the ALD of dielectric alumina (Al2O3) films and conducting tungsten (W) films. The Al2O3 films are deposited on submicron BN particles and the surface chemistry is monitored using Fourier transform infrared (FTIR) spectroscopy. Additional transmission electron microscopy (TEM) studies investigated the conformality of the Al2O3 growth on the BN particles. FTIR investigations of the surface chemistry during W ALD are performed on nanometer-sized Si02 particles. Additional in situ spectroscopy ellipsometry studies of W ALD on Si(100) established the W ALD growth rates. Al2O3 and W ALD both illustrate the potential of ALD to obtain conformal and atomic layer controlled thin film growth using sequential surface reactions.

Atomic layer deposition on particles using a fluidized bed reactor with in situ mass spectrometry

2007 ◽  
Vol 201 (22-23) ◽  
pp. 9163-9171 ◽  
Author(s):  
David M. King ◽  
Joseph A. Spencer ◽  
Xinhua Liang ◽  
Luis F. Hakim ◽  
Alan W. Weimer
Keyword(s):  
Mass Spectrometry ◽  
Atomic Layer Deposition ◽  
Fluidized Bed ◽  
Atomic Layer ◽  
Fluidized Bed Reactor ◽  
Layer Deposition
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