In situ resistivity measurements during the atomic layer deposition of ZnO and W thin films

2002 ◽  
Vol 81 (1) ◽  
pp. 180-182 ◽  
Author(s):  
M. Schuisky ◽  
J. W. Elam ◽  
S. M. George
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Resistivity Measurements ◽  
Layer Deposition

Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

2017 ◽  
Vol 9 (8) ◽  
pp. 7761-7771 ◽  
Author(s):  
Gabriele Fisichella ◽  
Emanuela Schilirò ◽  
Salvatore Di Franco ◽  
Patrick Fiorenza ◽  
Raffaella Lo Nigro ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

In situ crystallization study of impurity phases in Bi–Fe–O thin films grown by atomic layer deposition

CrystEngComm ◽  
2017 ◽  
Vol 19 (1) ◽  
pp. 166-170 ◽  
Author(s):  
Andrew R. Akbashev ◽  
Matthias Falmbigl ◽  
Aleksandr V. Plokhikh ◽  
Jonathan E. Spanier
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Impurity Phases ◽  
Layer Deposition ◽  
In Situ Crystallization ◽  
Crystallization Study

Atomic Layer Deposition of Cobalt Silicide Thin Films Studied by in Situ Infrared Spectroscopy

2015 ◽  
Vol 27 (14) ◽  
pp. 4943-4949 ◽  
Author(s):  
Karla Bernal-Ramos ◽  
Mark J. Saly ◽  
Ravindra K. Kanjolia ◽  
Yves J. Chabal
Keyword(s):  
Thin Films ◽  
Infrared Spectroscopy ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Cobalt Silicide ◽  
Layer Deposition ◽  
In Situ Infrared Spectroscopy

Atomic Layer Deposition of thin Films Using Sequential Surface Reactions

2000 ◽  
Vol 616 ◽  
Author(s):  
S. M. George ◽  
J.D. Ferguson ◽  
J.W. Klaus
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Surface Chemistry ◽  
Film Growth ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Single Element ◽  
Transmission Electron ◽  
Layer Deposition

AbstractThin films can be deposited with atomic layer control using sequential surface reactions. The atomic layer deposition (ALD) of compound and single-element films can be accomplished using the appropriate surface chemistry. This paper reviews the ALD of dielectric alumina (Al2O3) films and conducting tungsten (W) films. The Al2O3 films are deposited on submicron BN particles and the surface chemistry is monitored using Fourier transform infrared (FTIR) spectroscopy. Additional transmission electron microscopy (TEM) studies investigated the conformality of the Al2O3 growth on the BN particles. FTIR investigations of the surface chemistry during W ALD are performed on nanometer-sized Si02 particles. Additional in situ spectroscopy ellipsometry studies of W ALD on Si(100) established the W ALD growth rates. Al2O3 and W ALD both illustrate the potential of ALD to obtain conformal and atomic layer controlled thin film growth using sequential surface reactions.

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