Novel Synthesis of High Surface Area Silicon Carbide by RAPET (Reactions under Autogenic Pressure at Elevated Temperature) of Organosilanes

2005 ◽  
Vol 17 (7) ◽  
pp. 1797-1802 ◽  
Author(s):  
Vilas G. Pol ◽  
Swati V. Pol ◽  
Aharon Gedanken
Keyword(s):  
Silicon Carbide ◽  
Elevated Temperature ◽  
Surface Area ◽  
High Surface ◽  
High Surface Area ◽  
Novel Synthesis

Novel synthesis of high surface area SiC by carbothermal reduction process

2014 ◽  
Vol 19 (2) ◽  
pp. 155-159 ◽  
Author(s):  
J. Y. Hao ◽  
Y. Y. Wang ◽  
C. W. Gong ◽  
Y. M. Tian ◽  
L. P. Liang
Keyword(s):  
Surface Area ◽  
Carbothermal Reduction ◽  
High Surface ◽  
High Surface Area ◽  
Reduction Process ◽  
Novel Synthesis

Pyrolysis of Organosilicon Gels to Silicon Carbide

1986 ◽  
Vol 73 ◽  
Author(s):  
Joseph R. Fox ◽  
Douglas A. White ◽  
Susan M. Oleff ◽  
Robert D. Boyer ◽  
Phyllis A. Budinger
Keyword(s):  
Silicon Carbide ◽  
Surface Area ◽  
High Surface ◽  
Sol Gel ◽  
High Surface Area ◽  
Carbon Chain ◽  
Carbon Chain Length ◽  
Pyrolysis Products ◽  
Surface Areas ◽  
Physical Measurements

AbstractSol-gel precursors to silicon carbide have been prepared using trifunctional chloro and alkoxysilanes which contain both the silicon and carbon necessary for SiC formation. Crosslinked gels having the ideal formula [RSiO1 5].]n have been synthesized by a hydrolysis/condensation scheme for a series of saturated and unsaturated R groups. The starting gels have been characterized by a variety of elemental analysis, spectroscopic and physical measurements including IR. XRD. TGA.. surface area and pore volume. A particularly powerful method for characterizing these gels is the combination of 13C and 29 Si solid state NMR which can provide information about the degree of crosslinking as well as residual hydroxy/alkoxy content.The controlled pyrolysis of these gels has been used to prepare silicon carbide-containing ceramic products with surface areas in excess of 600m2/gm. The pyrolysis products are best described as a partially crystalline, partially amorphous mixture of β-SiC, silica and carbon. The effect of carbon chain length and the degree of unsaturation in the R group on the composition and surface area of the product has been determined. The origin of the high surface area of the pyrolysis products has been identified and its implications on potential uses of these materials is discussed.

Synthesis of High Surface Area Silicon Carbide and Its Application in CO Oxidation Reaction

2008 ◽  
Vol 24 (01) ◽  
pp. 171-175 ◽  
Author(s):  
ZHAN Ying-Ying ◽  
◽  
◽  
CAI Guo-Hui ◽  
ZHENG Yong ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Co Oxidation ◽  
Surface Area ◽  
Oxidation Reaction ◽  
High Surface ◽  
High Surface Area ◽  
Co Oxidation Reaction

High surface area silicon carbide doped with zirconium for use as catalyst support. Preparation, characterization and catalytic application

1999 ◽  
Vol 180 (1-2) ◽  
pp. 385-397 ◽  
Author(s):  
Cuong Pham-Huu ◽  
Christophe Bouchy ◽  
Thierry Dintzer ◽  
Gabrielle Ehret ◽  
Claude Estournes ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Surface Area ◽  
High Surface ◽  
Catalyst Support ◽  
High Surface Area ◽  
Catalytic Application

The Synthesis of High-Surface Area Silicon Carbide by Conversion Method Using Carbosilane Polymer

2014 ◽  
Vol 353 ◽  
pp. 244-247
Author(s):  
Eun Jin Jung ◽  
Yoon Joo Lee ◽  
Woo Teck Kwon ◽  
Y. Kim ◽  
Dong Geun Shin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Mesoporous Silica ◽  
Surface Area ◽  
High Surface ◽  
Hollow Spheres ◽  
High Surface Area ◽  
Bet Analysis ◽  
Fibrous Morphology ◽  
High Surface Area Materials ◽  
Mcm 41

Since mesoporous silica such as MCM-41 and SBA-15 was developed, the study of the properties of high-surface area materials was accelerated. Moreover, the mesoporous silica is used as a template to produce high-surface materials by nanocasting technology. The purpose of this paper is the synthesis of a high surface silicon carbide sphere by the nanocasting technology. In this study, KCC-1 silica sphere was used as a template, and polycarbosilane and poly (phenyl carbosilane) were selected for precursor of silicon carbide. Carbosilane polymer gives advantage of synthesis silicon carbide under low temperature, and hollow spheres were produced. In this study, the polycarbosilane was more effective for the synthesis of SiC hollow spheres by inversion of template structure showing a fibrous morphology on the sphere wall. And it was confirmed that the sphere was composed of nanosized SiC crystals, and has high surface area using TEM, XRD and BET analysis.

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