Optimizing the Synthesis of Red- to Near-IR-Emitting CdS-Capped CdTexSe1-xAlloyed Quantum Dots for Biomedical Imaging

2006 ◽  
Vol 18 (20) ◽  
pp. 4845-4854 ◽  
Author(s):  
Wen Jiang ◽  
Anupam Singhal ◽  
Jianing Zheng ◽  
Chen Wang ◽  
Warren C. W. Chan
Keyword(s):  
Quantum Dots ◽  
Biomedical Imaging ◽  
Near Ir

Exploring the Biocompatibility of Near-IR CuInSexS2–x/ZnS Quantum Dots for Deep-Tissue Bioimaging

2020 ◽  
Vol 3 (12) ◽  
pp. 8567-8574
Author(s):  
Jessica Z. Kubicek-Sutherland ◽  
Nikolay S. Makarov ◽  
Zachary R. Stromberg ◽  
Kiersten D. Lenz ◽  
Chloe Castañeda ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Deep Tissue ◽  
Near Ir

scholarly journals Stable DHLA–PEG capped PbS quantum dots: from synthesis to near-infrared biomedical imaging

2018 ◽  
Vol 6 (4) ◽  
pp. 550-555 ◽  
Author(s):  
F. Zamberlan ◽  
L. Turyanska ◽  
A. Patanè ◽  
Z. Liu ◽  
H. E. L. Williams ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Biomedical Imaging ◽  
Near Infrared ◽  
Non Invasive ◽  
Pbs Nanocrystals ◽  
Pbs Quantum Dots

Stability, biocompatibility and near-infrared photoluminescence of PbS nanocrystals capped with PEG-based ligands open up realistic prospects for non-invasive bioimaging applications.

Measurement of the luminescence decay times of PbS quantum dots in the near-IR spectral range

2012 ◽  
Vol 112 (6) ◽  
pp. 868-873 ◽  
Author(s):  
P. S. Parfenov ◽  
A. P. Litvin ◽  
A. V. Baranov ◽  
E. V. Ushakova ◽  
A. V. Fedorov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Spectral Range ◽  
Luminescence Decay ◽  
Near Ir ◽  
Decay Times ◽  
Pbs Quantum Dots

Functional Characteristics of QD-InAs/GaAs Heterostructures with Potential Barriers AlGaAs and GaAs

2018 ◽  
Vol 284 ◽  
pp. 182-187
Author(s):  
E.E. Blokhin ◽  
D.A. Arustamyan ◽  
L.M. Goncharova
Keyword(s):  
Quantum Dots ◽  
High Speed ◽  
Ion Beam ◽  
Inas Quantum Dots ◽  
Potential Barriers ◽  
Near Ir ◽  
Current Voltage ◽  
Ir Photodetectors ◽  
Current Voltage Characteristics ◽  
Beam Deposition

In this paper we present the results of investigation of heterostructures with an array of InAs quantum dots grown on GaAs substrates with GaAs and AlGaAs front barriers for high-speed near-IR photodetectors. The thickness of the barrier layers did not exceed 30 nm. It is shown that the ion-beam deposition method makes it possible to grow quantum dots with lateral dimensions up to 30 nm and 15 nm height. The spectral dependences of the external quantum efficiency and dark current-voltage characteristics are investigated.

Lead sulfide quantum dots for mode-locking and Q-switching of near IR lasers

2005 ◽  
Author(s):  
A. M. Malyarevich ◽  
V. G. Savitski ◽  
M. S. Gaponenko ◽  
K. V. Yumashev ◽  
A. A. Lagatsky ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Lead Sulfide ◽  
Mode Locking ◽  
Near Ir ◽  
Q Switching ◽  
Lead Sulfide Quantum Dots

scholarly journals Near-IR fluorescence and reflectance confocal microscopy for imaging of quantum dots in mammalian skin

2011 ◽  
Vol 2 (6) ◽  
pp. 1610 ◽  
Author(s):  
Luke J. Mortensen ◽  
Christopher E. Glazowski ◽  
James M. Zavislan ◽  
Lisa A. DeLouise
Keyword(s):  
Quantum Dots ◽  
Confocal Microscopy ◽  
Reflectance Confocal Microscopy ◽  
Near Ir ◽  
Mammalian Skin
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