Process Development Data—Heat of Combustion of Some Organosilicon Compounds

ETL is a key link in the construction of data warehouse. On the base of analyzing the mainstream ETL tool Datastage, the data extraction, transformation and loading, proposes a ETL framework based on data processing, and the realization method and steps are discussed in detail. The framework uses HIVE as a data processing station, improve the operating efficiency of the file; data task according to the E, T and L three parts and hierarchical partitioning, conversion of data users to better grasp the process; development data using the configuration file of the task, the development personnel free out from the heavy code, will to shift the focus of the work to the data logical task, which has greatly improved the efficiency of development personnel data processing.

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Reliable predictions of the net heat of combustion and the condensed phase heat of formation of organosilicon compounds

Fuel ◽

10.1016/j.fuel.2021.121931 ◽

2022 ◽

Vol 307 ◽

pp. 121931

Author(s):

Mohammad Hossein Keshavarz ◽

Ronak Hasani

Keyword(s):

Condensed Phase ◽

Heat Of Formation ◽

Heat Of Combustion ◽

Organosilicon Compounds

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Advanced TEM sample preparation techniques for submicron Si devices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138956 ◽

1995 ◽

Vol 53 ◽

pp. 516-517 ◽

Cited By ~ 1

Author(s):

P. B. Basham ◽

H. L. Tsai

Keyword(s):

Sample Preparation ◽

Process Development ◽

Light Transmission ◽

Specific Area ◽

Turnaround Time ◽

Small Hole ◽

Area Of Interest ◽

Transmission Electron ◽

Polished Side ◽

Preparation Techniques

The use of transmission electron microscopy (TEM) to support process development of advanced microelectronic devices is often challenged by a large amount of samples submitted from wafer fabrication areas and specific-spot analysis. Improving the TEM sample preparation techniques for a fast turnaround time is critical in order to provide a timely support for customers and improve the utilization of TEM. For the specific-area sample preparation, a technique which can be easily prepared with the least amount of effort is preferred. For these reasons, we have developed several techniques which have greatly facilitated the TEM sample preparation.For specific-area analysis, the use of a copper grid with a small hole is found to be very useful. With this small-hole grid technique, TEM sample preparation can be proceeded by well-established conventional methods. The sample is first polished to the area of interest, which is then carefully positioned inside the hole. This polished side is placed against the grid by epoxy Fig. 1 is an optical image of a TEM cross-section after dimpling to light transmission.

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The Structure and Properties of MoSi2 Thin Film in Mos Process

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s1431927600001379 ◽

1980 ◽

Vol 38 ◽

pp. 326-327

Author(s):

C.K. Wu ◽

P. Chang ◽

N. Godinho

Keyword(s):

Thin Film ◽

Integrated Circuits ◽

High Performance ◽

Large Scale ◽

Process Development ◽

Structure And Properties ◽

Metal Silicides ◽

High Oxidation ◽

Important Approach ◽

High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

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