TSV front end design, integration, and process development

2017 ◽  
Author(s):  
Mike Thomason ◽  
Gordy Girvna
Keyword(s):  
Process Development ◽  
Front End ◽  
Design Integration

scholarly journals Preparation, Imaging, and Design Extraction of the Front-End-of-Line and Middle-of-Line in a 14 nm Node FinFET Device

2021 ◽  
Author(s):  
Adam R. Waite ◽  
Yash Patel ◽  
John Kelley ◽  
Jon Scholl ◽  
Joshua Baur ◽  
...  
Keyword(s):  
Process Development ◽  
Region Of Interest ◽  
Verification And Validation ◽  
Advanced Technology ◽  
Timely Manner ◽  
New Techniques ◽  
Technology Node ◽  
Front End ◽  
3D Architecture ◽  
Silicon Device

This paper presents the first design reconstruction on the Front-End-of-Line and Middle-of-Line layers of a 14 nm node FinFET design. To accomplish this, a large region of interest within a custom designed 14 nm node ASIC device was delayered, imaged, and analyzed to reconstruct the GDSII design file and verify a 100% match to the golden GDSII design. This work leveraged previous developments in each stage of the front half of the cooperative Verification and Validation (V&V) workflow combined with new techniques and processes developed for processing 3D architecture FET devices. We have demonstrated the critical first step to performing a full V&V workflow on an advanced technology node device, starting from the fabricated silicon device to the design extraction. The process development knowledge gained while reaching this milestone will further accelerate future advancements toward providing trusted advanced technology node devices in a timely manner. <br>

Managing process development: key issues and dimensions in the front end

2013 ◽  
Vol 43 (3) ◽  
pp. 213-226 ◽  
Author(s):  
Johan Frishammar ◽  
Ulrich Lichtenthaler ◽  
Anders Richtnér
Keyword(s):  
Process Development ◽  
Front End ◽  
Key Issues

Where process development begins: A multiple case study of front end activities in process firms

Technovation ◽  
2011 ◽  
Vol 31 (9) ◽  
pp. 490-504 ◽  
Author(s):  
Monika Kurkkio ◽  
Johan Frishammar ◽  
Ulrich Lichtenthaler
Keyword(s):  
Process Development ◽  
Multiple Case Study ◽  
Front End ◽  
Multiple Case

Front-end-of-line process development using 193-nm lithography

2001 ◽  
Author(s):  
Ivan K. Pollentier ◽  
Monique Ercken ◽  
Astrid Eliat ◽  
Christie Delvaux ◽  
Patrick Jaenen ◽  
...  
Keyword(s):  
Process Development ◽  
Front End ◽  
Line Process ◽  
193 Nm

scholarly journals Preparation, Imaging, and Design Extraction of the Front-End-of-Line and Middle-of-Line in a 14 nm Node FinFET Device

2021 ◽  
Author(s):  
Adam R. Waite ◽  
Yash Patel ◽  
John Kelley ◽  
Jon Scholl ◽  
Joshua Baur ◽  
...  
Keyword(s):  
Process Development ◽  
Region Of Interest ◽  
Verification And Validation ◽  
Advanced Technology ◽  
Timely Manner ◽  
New Techniques ◽  
Technology Node ◽  
Front End ◽  
3D Architecture ◽  
Silicon Device

This paper presents the first design reconstruction on the Front-End-of-Line and Middle-of-Line layers of a 14 nm node FinFET design. To accomplish this, a large region of interest within a custom designed 14 nm node ASIC device was delayered, imaged, and analyzed to reconstruct the GDSII design file and verify a 100% match to the golden GDSII design. This work leveraged previous developments in each stage of the front half of the cooperative Verification and Validation (V&V) workflow combined with new techniques and processes developed for processing 3D architecture FET devices. We have demonstrated the critical first step to performing a full V&V workflow on an advanced technology node device, starting from the fabricated silicon device to the design extraction. The process development knowledge gained while reaching this milestone will further accelerate future advancements toward providing trusted advanced technology node devices in a timely manner. <br>

Advanced TEM sample preparation techniques for submicron Si devices

1995 ◽  
Vol 53 ◽  
pp. 516-517 ◽  
Author(s):  
P. B. Basham ◽  
H. L. Tsai
Keyword(s):  
Sample Preparation ◽  
Process Development ◽  
Light Transmission ◽  
Specific Area ◽  
Turnaround Time ◽  
Small Hole ◽  
Area Of Interest ◽  
Transmission Electron ◽  
Polished Side ◽  
Preparation Techniques

The use of transmission electron microscopy (TEM) to support process development of advanced microelectronic devices is often challenged by a large amount of samples submitted from wafer fabrication areas and specific-spot analysis. Improving the TEM sample preparation techniques for a fast turnaround time is critical in order to provide a timely support for customers and improve the utilization of TEM. For the specific-area sample preparation, a technique which can be easily prepared with the least amount of effort is preferred. For these reasons, we have developed several techniques which have greatly facilitated the TEM sample preparation.For specific-area analysis, the use of a copper grid with a small hole is found to be very useful. With this small-hole grid technique, TEM sample preparation can be proceeded by well-established conventional methods. The sample is first polished to the area of interest, which is then carefully positioned inside the hole. This polished side is placed against the grid by epoxy Fig. 1 is an optical image of a TEM cross-section after dimpling to light transmission.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

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