Toward a Determination of the Critical Size of Ice Nuclei. A Demonstration by Grazing Incidence X-ray Diffraction of Epitaxial Growth of Ice under the C31H63OH Alcohol Monolayer

1994 ◽  
Vol 98 (15) ◽  
pp. 4087-4093 ◽  
Author(s):  
J. Majewski ◽  
R. Popovitz-Biro ◽  
K. Kjaer ◽  
J. Als-Nielsen ◽  
M. Lahav ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Critical Size ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ice Nuclei

Determination of the epitaxial growth of zinc oxide nanowires on sapphire by grazing incidence synchrotron x-ray diffraction

2007 ◽  
Vol 90 (18) ◽  
pp. 181929 ◽  
Author(s):  
L. C. Campos ◽  
S. H. Dalal ◽  
D. L. Baptista ◽  
R. Magalhães-Paniago ◽  
A. S. Ferlauto ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Epitaxial Growth ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Zinc Oxide Nanowires ◽  
Oxide Nanowires ◽  
X Ray

Structure determination of ultrathin NbSe2 films by Grazing incidence x-ray diffraction

1994 ◽  
Vol 89 (7) ◽  
pp. 583-586 ◽  
Author(s):  
Toshihiro Shimada ◽  
Yukito Furukawa ◽  
Etsuo Arakawa ◽  
Kunikazu Takeshita ◽  
Tadashi Matsushita ◽  
...  
Keyword(s):  
Structure Determination ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray

C49-TiSi2 Epitaxial Orientation Dependence of the C49-to-C54 Phase Transformation Rate

1998 ◽  
Vol 514 ◽  
Author(s):  
T. Nakamura ◽  
K. Ikeda ◽  
H. Tomita ◽  
S. Komiya ◽  
K. Nakajima
Keyword(s):  
Phase Transformation ◽  
Epitaxial Growth ◽  
Grazing Incidence ◽  
Orientation Dependence ◽  
Transformation Rate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Rapid Transformation

ABSTRACTEffects of the C49-TiSi2 epitaxial orientation on the C49-to-C54 phase transformation rate have been studied for samples with different pre-amorphization implantation (PAI) conditions. The C49 epitaxial orientation to the Si(001) substrate is characterized by use of grazing-incidence X-ray diffraction (GIXD) measurements. We found that the PAl treatment suppresses the epitaxial growth of C49-TiSi2 on Si(001) substrates and the poorer orientational alignment of C49-TiSi2 causes a more rapid transformation to C54-TiSi2. We believe this suppression of epitaxial alignment is a possible mechanism to understand the effect of the PAl treatment on the C49-C54 transformation.

Study of a chemical-vapor-deposited diamond thin film on a molybdenum substrate by glancing incidence X-ray diffraction

2007 ◽  
Vol 22 (4) ◽  
pp. 319-323 ◽  
Author(s):  
Jianfeng Fang ◽  
Jing Huo ◽  
Jinyuan Zhang ◽  
Yi Zheng
Keyword(s):  
Thin Film ◽  
Diffraction Analysis ◽  
Transition Layer ◽  
Chemical Vapor ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diamond Thin Film ◽  
Chemical Vapor Deposited

The structure of a chemical-vapor-deposited (CVD) diamond thin film on a Mo substrate was studied using quasi-parallel X-ray and glancing incidence techniques. Conventional X-ray diffraction analysis revealed that the sample consists of a diamond thin film, a Mo2C transition layer, and Mo substrate. The Mo2C transition layer was formed by a chemical reaction between the diamond film and the Mo substrate during the CVD process. A method for layer-thickness determination of the thin film and the transition layer was developed. This method was based on a relationship between X-ray diffraction intensities from the transition layer or its substrate and a function of grazing incidence angles. Results of glancing incidence X-ray diffraction analysis showed that thicknesses of the diamond thin film and the Mo2C transition layer were determined successfully with high precision.

scholarly journals Structural Determination of the Epitaxial C60 Overlayer on the Pentacene Single Crystal by Grazing Incidence X-ray Diffraction

Hyomen Kagaku ◽  
2016 ◽  
Vol 37 (9) ◽  
pp. 429-434 ◽  
Author(s):  
Ryohei TSURUTA ◽  
Yuta MIZUNO ◽  
Takuya HOSOKAI ◽  
Tomoyuki KOGANEZAWA ◽  
Hisao ISHII ◽  
...  
Keyword(s):  
Single Crystal ◽  
Grazing Incidence ◽  
Structural Determination ◽  
X Ray Diffraction ◽  
X Ray

Direct determination of strain and composition in InGaAs nano-islands using anomalous grazing incidence x-ray diffraction

2004 ◽  
Vol 36 (1-3) ◽  
pp. 11-19 ◽  
Author(s):  
M. Sztucki ◽  
T.U. Schülli ◽  
T.H. Metzger ◽  
E. Beham ◽  
D. Schuh ◽  
...  
Keyword(s):  
Direct Determination ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Multiple scattering in grazing-incidence X-ray diffraction: impact on lattice-constant determination in thin films

2016 ◽  
Vol 23 (3) ◽  
pp. 729-734 ◽  
Author(s):  
Roland Resel ◽  
Markus Bainschab ◽  
Alexander Pichler ◽  
Theo Dingemans ◽  
Clemens Simbrunner ◽  
...  
Keyword(s):  
Thin Films ◽  
Critical Angle ◽  
Grazing Incidence ◽  
X Rays ◽  
Organic Thin Film ◽  
X Ray Diffraction ◽  
Reliable Determination ◽  
X Ray ◽  
Out Of Plane

Dynamical scattering effects are observed in grazing-incidence X-ray diffraction experiments using an organic thin film of 2,2′:6′,2′′-ternaphthalene grown on oxidized silicon as substrate. Here, a splitting of all Bragg peaks in the out-of-plane direction (z-direction) has been observed, the magnitude of which depends both on the incidence angle of the primary beam and the out-of-plane angle of the scattered beam. The incident angle was varied between 0.09° and 0.25° for synchrotron radiation of 10.5 keV. This study reveals comparable intensities of the split peaks with a maximum for incidence angles close to the critical angle of total external reflection of the substrate. This observation is rationalized by two different scattering pathways resulting in diffraction peaks at different positions at the detector. In order to minimize the splitting, the data suggest either using incident angles well below the critical angle of total reflection or angles well above, which sufficiently attenuates the contributions from the second scattering path. This study highlights that the refraction of X-rays in (organic) thin films has to be corrected accordingly to allow for the determination of peak positions with sufficient accuracy. Based thereon, a reliable determination of the lattice constants becomes feasible, which is required for crystallographic structure solutions from thin films.

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