Determination of the epitaxial growth of zinc oxide nanowires on sapphire by grazing incidence synchrotron x-ray diffraction

2007 ◽  
Vol 90 (18) ◽  
pp. 181929 ◽  
Author(s):  
L. C. Campos ◽  
S. H. Dalal ◽  
D. L. Baptista ◽  
R. Magalhães-Paniago ◽  
A. S. Ferlauto ◽  
...  
1994 ◽  
Vol 89 (7) ◽  
pp. 583-586 ◽  
Author(s):  
Toshihiro Shimada ◽  
Yukito Furukawa ◽  
Etsuo Arakawa ◽  
Kunikazu Takeshita ◽  
Tadashi Matsushita ◽  
...  

Author(s):  
Svetlana S. Nalimova ◽  
Anton A. Bobkov ◽  
Valeriy M. Kondrat'ev ◽  
Andrey A. Ryabko ◽  
Vyacheslav A. Moshnikov ◽  
...  

2012 ◽  
Vol 1439 ◽  
pp. 139-144 ◽  
Author(s):  
Nima Mohseni Kiasari ◽  
Saeid Soltanian ◽  
Bobak Gholamkhass ◽  
Peyman Servati

ABSTRACTZinc oxide (ZnO) nanowires (NW) are grown on both silicon and sapphire substrates using conventional chemical vapor deposition (CVD) system. As-grown nanostructures are characterized by scanning electron microscope (SEM), X-ray diffraction (XRD) as well as energy dispersive spectroscopy (EDS) and the results confirm high-quality c-axis growth of single-crystalline zinc oxide nanowires. Nanowire are dispersed in solvent and then placed between micro-patterned gold electrodes fabricated on silicon wafers using low cost and scalable dielectrophoresis (DEP) process for fabrication of oxygen and humidity sensors. These sensors are characterized in a vacuum chamber connected to a semiconductor analyzer. Current-voltage characteristics of each device are systematically investigated under different hydrostatic pressure of various gaseous environments such as nitrogen, argon, dry and humid air. It is observed that the electrical conductivity of the nanowires is significantly dependent on the number of oxygen and water molecules adsorbed to the surface of the metal oxide nanowire. These results are critical for development of low cost metal oxide sensors for high performance ubiquitous environmental sensors of oxygen and humidity.


1998 ◽  
Vol 514 ◽  
Author(s):  
T. Nakamura ◽  
K. Ikeda ◽  
H. Tomita ◽  
S. Komiya ◽  
K. Nakajima

ABSTRACTEffects of the C49-TiSi2 epitaxial orientation on the C49-to-C54 phase transformation rate have been studied for samples with different pre-amorphization implantation (PAI) conditions. The C49 epitaxial orientation to the Si(001) substrate is characterized by use of grazing-incidence X-ray diffraction (GIXD) measurements. We found that the PAl treatment suppresses the epitaxial growth of C49-TiSi2 on Si(001) substrates and the poorer orientational alignment of C49-TiSi2 causes a more rapid transformation to C54-TiSi2. We believe this suppression of epitaxial alignment is a possible mechanism to understand the effect of the PAl treatment on the C49-C54 transformation.


2007 ◽  
Vol 22 (4) ◽  
pp. 319-323 ◽  
Author(s):  
Jianfeng Fang ◽  
Jing Huo ◽  
Jinyuan Zhang ◽  
Yi Zheng

The structure of a chemical-vapor-deposited (CVD) diamond thin film on a Mo substrate was studied using quasi-parallel X-ray and glancing incidence techniques. Conventional X-ray diffraction analysis revealed that the sample consists of a diamond thin film, a Mo2C transition layer, and Mo substrate. The Mo2C transition layer was formed by a chemical reaction between the diamond film and the Mo substrate during the CVD process. A method for layer-thickness determination of the thin film and the transition layer was developed. This method was based on a relationship between X-ray diffraction intensities from the transition layer or its substrate and a function of grazing incidence angles. Results of glancing incidence X-ray diffraction analysis showed that thicknesses of the diamond thin film and the Mo2C transition layer were determined successfully with high precision.


Hyomen Kagaku ◽  
2016 ◽  
Vol 37 (9) ◽  
pp. 429-434 ◽  
Author(s):  
Ryohei TSURUTA ◽  
Yuta MIZUNO ◽  
Takuya HOSOKAI ◽  
Tomoyuki KOGANEZAWA ◽  
Hisao ISHII ◽  
...  

2004 ◽  
Vol 36 (1-3) ◽  
pp. 11-19 ◽  
Author(s):  
M. Sztucki ◽  
T.U. Schülli ◽  
T.H. Metzger ◽  
E. Beham ◽  
D. Schuh ◽  
...  

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