Study of a chemical-vapor-deposited diamond thin film on a molybdenum substrate by glancing incidence X-ray diffraction

2007 ◽  
Vol 22 (4) ◽  
pp. 319-323 ◽  
Author(s):  
Jianfeng Fang ◽  
Jing Huo ◽  
Jinyuan Zhang ◽  
Yi Zheng
Keyword(s):  
Thin Film ◽  
Diffraction Analysis ◽  
Transition Layer ◽  
Chemical Vapor ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diamond Thin Film ◽  
Chemical Vapor Deposited

The structure of a chemical-vapor-deposited (CVD) diamond thin film on a Mo substrate was studied using quasi-parallel X-ray and glancing incidence techniques. Conventional X-ray diffraction analysis revealed that the sample consists of a diamond thin film, a Mo2C transition layer, and Mo substrate. The Mo2C transition layer was formed by a chemical reaction between the diamond film and the Mo substrate during the CVD process. A method for layer-thickness determination of the thin film and the transition layer was developed. This method was based on a relationship between X-ray diffraction intensities from the transition layer or its substrate and a function of grazing incidence angles. Results of glancing incidence X-ray diffraction analysis showed that thicknesses of the diamond thin film and the Mo2C transition layer were determined successfully with high precision.

Surface and Ultra-Thin Film Characterization by Grazing-Incidence Asymmetric Bragg Diffraction

1989 ◽  
Vol 33 ◽  
pp. 91-100 ◽  
Author(s):  
T. C. Huang
Keyword(s):  
Thin Film ◽  
Diffraction Analysis ◽  
Grazing Incidence ◽  
Bragg Diffraction ◽  
Dead Layer ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Depth Profiles ◽  
Radiation Sources

AbstractAn effective technique using grazing-incidence X-rays and asymmetric-Bragg diffraction (GIABD) for the characterization of crystalline phases on surfaces and structural depth-profiles in thin films is described. The application of the GIABD using both X-ray and synchrotron radiation sources for the analysis of an iron-oxide magnetic thin film previously reported to have an unexpected magnetically-dead layer is discussed. The X-ray diffraction analysis using the GIABD and the conventional θ-2θ scanning techniques detected an anti-ferromagnetic hexagonal α-Fe2O3 on the surface and a ferromagnetic tetragonal γ-Fe2O3 in the bulk of the film, respectively. The synchrotron diffraction analysis using incident angles below and above the critical angle of total reflection quantitatively determined the structural depth-profiles of α-Fe2O3 and γ-Fe2O3 in the film.

Synthesis of 4-(3-coumarinyl)-3-benzyl-4-thiazolin-2-one 4-methylbenzylidenehydrazone and determination of the isomeric structure by X-ray analysis

2003 ◽  
Vol 218 (12) ◽  
Author(s):  
Süheyla Özbey ◽  
Nilgün Karalı ◽  
Aysel Gürsoy
Keyword(s):  
Single Crystal ◽  
Diffraction Analysis ◽  
Spectral Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Isomeric Structure ◽  
Elemental Analyses

AbstractIn this study 4-(3-coumarinyl)-3-benzyl-4-thi azolin-2-one 4-methylbenzylidenehydrazone 3 was synthesised. An independent proof of the thiazolylhydrazone structure of 3 was achieved by single crystal X-ray diffraction analysis. Elemental analyses and spectral data (IR,

Structure determination of ultrathin NbSe2 films by Grazing incidence x-ray diffraction

1994 ◽  
Vol 89 (7) ◽  
pp. 583-586 ◽  
Author(s):  
Toshihiro Shimada ◽  
Yukito Furukawa ◽  
Etsuo Arakawa ◽  
Kunikazu Takeshita ◽  
Tadashi Matsushita ◽  
...  
Keyword(s):  
Structure Determination ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray

Compamson in the Growth and Properties of rf Sputtered μc-Si:H and Glow Discharge-Chemical Vapor Deposited μc-Si:H Films

1993 ◽  
Vol 321 ◽  
Author(s):  
J. Y. Lin ◽  
B. H. Tseng ◽  
K. C. Hsu ◽  
H. L. Hwang
Keyword(s):  
Glow Discharge ◽  
Rf Sputtering ◽  
Chemical Vapor ◽  
Treatment Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grain Sizes ◽  
Chemical Vapor Deposited ◽  
Ft Ir ◽  
Almost All

ABSTRACTProperties of μc-Si:H films grown by rf sputtering and by glow discharge-chemical vapor deposition (GD-CVD) using diluted-hydrogen and hydrogen-atom-treatment method were compared employing TEM, X-ray diffraction, Raman scattering and FT-IR. The films deposited by both methods all exhibited comparable grain sizes in the range of 10–18 nm. and showed the same tendency in almost all the Measurements.

X-ray diffraction analysis of YBaCuO ultra-thin film growth

1997 ◽  
Vol 251 (1-2) ◽  
pp. 65-69 ◽  
Author(s):  
G. Linker ◽  
D. Hüttner ◽  
O. Meyer ◽  
M. Ohkubo ◽  
J. Reiner
Keyword(s):  
Thin Film ◽  
Diffraction Analysis ◽  
Film Growth ◽  
Thin Film Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ultra Thin Film
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