n-Type molybdenum diselenide-based photoelectrochemical cells: evidence for Fermi level pinning and comparison of the efficiency for conversion of light to electricity with various solvent/halogen/halide combinations

1980 ◽  
Vol 102 (23) ◽  
pp. 6964-6971 ◽  
Author(s):  
Lynn F. Schneemeyer ◽  
Mark S. Wrighton
Keyword(s):  
Fermi Level ◽  
Photoelectrochemical Cells ◽  
Fermi Level Pinning ◽  
Molybdenum Diselenide

Photoelectrochemical cells with n-CdTe

1982 ◽  
Vol 35 (10) ◽  
pp. 1949 ◽  
Author(s):  
AE Rakhshani ◽  
LE Lyons
Keyword(s):  
Fermi Level ◽  
Empirical Relationship ◽  
Open Circuit ◽  
Photoelectrochemical Cells ◽  
Flat Band ◽  
High State ◽  
Photovoltaic Properties ◽  
Minority Carrier Diffusion Length ◽  
Fermi Level Pinning ◽  
Redox Couples

The opto-electrical behaviour of single crystal n-type CdTe in aqueous solutions containing several redox couples Sn2+,4+, Fe2+3+ and Fe(CN)63-,4-in the dark and under irradiation is described. The minority carrier diffusion length was 0.13 μm from a combination of results on photocurrents and capacitance. The dopant concentration was 1.4 × 1017 cm-3 from Mott-Schottky plots. In the cdTe-Sn2+,4+ system the photovoltaic properties of the junction depended on the state of charge injection into the interface region. We distinguished between a 'high state' and a 'low state' where in the 'high state' both the open circuit photovoltage and the fill factor were approximately twice as large as in the 'low state'. Possibilities for a difference in the value of the built-in potential obtained from the photocurrent method and from a Mott-Schottky plot are described. The built-in potential (or the flat-band potential) was independent of the redox potential, an effect which is analogous to Fermi-level pinning. The empirical relationship between barrier height and band gap in a Fermi-level pinned junction held for our system.

Fermi level pinning and band bending in δ-doped BaSnO3

2021 ◽  
Vol 118 (5) ◽  
pp. 052101
Author(s):  
Youjung Kim ◽  
Hyeongmin Cho ◽  
Kookrin Char
Keyword(s):  
Fermi Level ◽  
Band Bending ◽  
Fermi Level Pinning

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

2021 ◽  
pp. 2001212
Author(s):  
Tien Dat Ngo ◽  
Zheng Yang ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Inyong Moon ◽  
...  
Keyword(s):  
Fermi Level ◽  
High Performance ◽  
Van Der Waals ◽  
Cmos Inverter ◽  
Fermi Level Pinning

scholarly journals Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts

2017 ◽  
Vol 9 (22) ◽  
pp. 19278-19286 ◽  
Author(s):  
Pantelis Bampoulis ◽  
Rik van Bremen ◽  
Qirong Yao ◽  
Bene Poelsema ◽  
Harold J. W. Zandvliet ◽  
...  
Keyword(s):  
Fermi Level ◽  
Charge Transport ◽  
Metal Contacts ◽  
Fermi Level Pinning

Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

2012 ◽  
Vol 101 (5) ◽  
pp. 052110 ◽  
Author(s):  
L. Lin ◽  
Y. Guo ◽  
J. Robertson
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Metal Silicide ◽  
Fermi Level Pinning

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

Fermi level pinning at the polySi/metal oxide interface

2004 ◽  
Author(s):  
C. Hobbs ◽  
L. Fonseca ◽  
V. Dhandapani ◽  
S. Samavedam ◽  
B. Taylor ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Fermi Level ◽  
Oxide Interface ◽  
Fermi Level Pinning

Different Fermi-level pinning positions between epitaxial and rotational Al/Si interfaces

1994 ◽  
Vol 50 (7) ◽  
pp. 4893-4896 ◽  
Author(s):  
Y. Miura ◽  
S. Fujieda ◽  
K. Hirose
Keyword(s):  
Fermi Level ◽  
Fermi Level Pinning
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