Solar Cell Efficiency, Self-Assembly, and Dipole–Dipole Interactions of Isomorphic Narrow-Band-Gap Molecules

2012 ◽  
Vol 134 (40) ◽  
pp. 16597-16606 ◽  
Author(s):  
Christopher J. Takacs ◽  
Yanming Sun ◽  
Gregory C. Welch ◽  
Louis A. Perez ◽  
Xiaofeng Liu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Self Assembly ◽  
Narrow Band ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Dipole Interactions

scholarly journals Wide Band-Gap 3,4-Difluorothiophene-Based Polymer with 7% Solar Cell Efficiency: An Alternative to P3HT

2015 ◽  
Vol 27 (12) ◽  
pp. 4184-4187 ◽  
Author(s):  
Jannic Wolf ◽  
Federico Cruciani ◽  
Abdulrahman El Labban ◽  
Pierre M. Beaujuge
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

Improving solar cell efficiency using photonic band-gap materials

2007 ◽  
Vol 91 (17) ◽  
pp. 1599-1610 ◽  
Author(s):  
Marian Florescu ◽  
Hwang Lee ◽  
Irina Puscasu ◽  
Martin Pralle ◽  
Lucia Florescu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Photonic Band Gap ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Photonic Band Gap Materials ◽  
Photonic Band

Improvement of sprayed CuZnS/In2S3 solar cell efficiency by making multiple band gap nature more prominent

2016 ◽  
Vol 8 (2) ◽  
pp. 023502 ◽  
Author(s):  
M. S. Sreejith ◽  
D. R. Deepu ◽  
C. SudhaKartha ◽  
K. Rajeevkumar ◽  
K. P. Vijayakumar
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Multiple Band

Increase of Solar Cell Efficiency in Graded Band Gap Structure

2015 ◽  
Vol 1117 ◽  
pp. 114-117
Author(s):  
J. Kaupužs ◽  
Arturs Medvid'
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
High Surface ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Recombination Velocity ◽  
Graded Band Gap ◽  
Band Gap Structure

The photo current-voltage characteristic of a solar cell with graded band gap is calculated numerically based on the drift-diffusion equation and Poisson equation. The calculated efficiency of the CdTe solar cell with p-n junction located in 1μm depth increases remarkably when the band gap of the front n-type layer is graded. The effect is strong for high surface recombination velocity and is remarkable even at: the calculated efficiency increases from 19.6% to 24.3%.

Monte Carlo Modelisation of Photoexcited Carriers Relaxation Including Auger Effect in Narrow Band Gap InGaAs

2009 ◽  
Vol 1230 ◽  
Author(s):  
Eric Tea ◽  
Frederic Aniel
Keyword(s):  
Monte Carlo ◽  
Band Gap ◽  
Carrier Concentration ◽  
High Efficiency ◽  
Carrier Lifetime ◽  
Narrow Band ◽  
Monte Carlo Model ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Auger Effect

AbstractThe Auger effect is one of the fastest recombination mechanisms in narrow band gap semiconductors at high carrier concentration. This regime is of great interest for high efficiency hot carrier solar cells application and is also involed in many optical devices. Therefore, the knowledge of this limitting process is required for the determination of carrier lifetime useful to accurate solar cell efficiency calculations. For the first time, we present a carrier lifetime study versus carrier concentration in InGaAs based on a Monte Carlo model where the Auger effect is included as a relaxation mecanism.

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