Increase of Solar Cell Efficiency in Graded Band Gap Structure

2015 ◽  
Vol 1117 ◽  
pp. 114-117
Author(s):  
J. Kaupužs ◽  
Arturs Medvid'
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
High Surface ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Recombination Velocity ◽  
Graded Band Gap ◽  
Band Gap Structure

The photo current-voltage characteristic of a solar cell with graded band gap is calculated numerically based on the drift-diffusion equation and Poisson equation. The calculated efficiency of the CdTe solar cell with p-n junction located in 1μm depth increases remarkably when the band gap of the front n-type layer is graded. The effect is strong for high surface recombination velocity and is remarkable even at: the calculated efficiency increases from 19.6% to 24.3%.

Semiconductor Materials and Modelling for Solar Cells

2021 ◽  
Author(s):  
Z. Pezeshki ◽  
A. Zekry
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Surface Recombination ◽  
Semiconductor Materials ◽  
Surface Recombination Velocity ◽  
Solar Cell Efficiency ◽  
Uv Sensitivity ◽  
Cell Efficiency ◽  
Comprehensive Survey ◽  
Recombination Velocity

The book presents a comprehensive survey about advanced solar cell technologies. Focus is placed on semiconductor materials, solar cell efficiency, improvements in surface recombination velocity, charge density, high ultraviolet (UV) sensitivity, modeling of solar cells etc. The book references 281 original resources with their direct web links for in-depth reading.

scholarly journals Optimization of Mono-Crystalline Silicon Solar Cell Devices Using PC1D Simulation

Energies ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4986
Author(s):  
Gokul Sidarth Thirunavukkarasu ◽  
Mehdi Seyedmahmoudian ◽  
Jaideep Chandran ◽  
Alex Stojcevski ◽  
Maruthamuthu Subramanian ◽  
...  
Keyword(s):  
Solar Cell ◽  
Doping Concentration ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Back Surface ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Surface Field ◽  
Recombination Velocity ◽  
Pc1d Simulation

Expeditious urbanization and rapid industrialization have significantly influenced the rise of energy demand globally in the past two decades. Solar energy is considered a vital energy source that addresses this demand in a cost-effective and environmentally friendly manner. Improving solar cell efficiency is considered a prerequisite to reinforcing silicon solar cells’ growth in the energy market. In this study, the influence of various parameters like the thickness of the absorber or wafer, doping concentration, bulk resistivity, lifetime, and doping levels of the emitter and back surface field, along with the surface recombination velocity (front and back) on solar cell efficiency was investigated using PC1D simulation software. Inferences from the results indicated that the bulk resistivity of 1 Ω·cm; bulk lifetime of 2 ms; emitter (n+) doping concentration of 1×1020 cm−3 and shallow back surface field doping concentration of 1×1018 cm−3; surface recombination velocity maintained in the range of 102 and 103 cm/s obtained a solar cell efficiency of 19%. The Simulation study presented in this article allows faster, simpler, and easier impact analysis of the design considerations on the Si solar cell wafer fabrications with increased performance.

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

scholarly journals Wide Band-Gap 3,4-Difluorothiophene-Based Polymer with 7% Solar Cell Efficiency: An Alternative to P3HT

2015 ◽  
Vol 27 (12) ◽  
pp. 4184-4187 ◽  
Author(s):  
Jannic Wolf ◽  
Federico Cruciani ◽  
Abdulrahman El Labban ◽  
Pierre M. Beaujuge
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

Improving solar cell efficiency using photonic band-gap materials

2007 ◽  
Vol 91 (17) ◽  
pp. 1599-1610 ◽  
Author(s):  
Marian Florescu ◽  
Hwang Lee ◽  
Irina Puscasu ◽  
Martin Pralle ◽  
Lucia Florescu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Photonic Band Gap ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Photonic Band Gap Materials ◽  
Photonic Band

Performance of Near-Field Thermophotovoltaic Cells Enhanced With a Backside Reflector

2014 ◽  
Vol 136 (6) ◽  
Author(s):  
T. J. Bright ◽  
L. P. Wang ◽  
Z. M. Zhang
Keyword(s):  
Waste Heat ◽  
Near Field ◽  
Electrical Power ◽  
Surface Recombination ◽  
Energy Conversion Efficiency ◽  
Surface Recombination Velocity ◽  
Critical Surface ◽  
Cell Efficiency ◽  
Recombination Velocity ◽  
Gap Spacing

Thermophotovoltaic (TPV) systems are very promising for waste heat recovery. This work analyzes the performance of a near-field TPV device with a gold reflecting layer on the backside of the cell. The radiative transfer from a tungsten radiator, at a temperature ranging from 1250 K to 2000 K, to an In0.18Ga0.82Sb TPV cell at 300 K is calculated using fluctuational electrodynamics. The current generation by the absorbed photon energy is modeled by the minority carrier diffusion equations considering recombination. The energy conversion efficiency of the cell is determined from the generated electrical power and the net absorbed radiant power per unit area. A parametric study of the cell efficiency considering the gap spacing and other parameters is conducted. For an emitter at temperature 1250 K, the efficiency enhancement by adding a mirror, which reduces the sub-bandgap radiation, is shown to be as much as 35% relative to a semi-infinite TPV cell. In addition, the potential for further improvement by reducing surface recombination velocity from that of a perfect ohmic contact is examined. The cell performance is shown to increase with decreasing gap spacing below a critical surface recombination velocity.

Orientation Dependence Of Surface Passivation For Semi-Insulating Gaas

1996 ◽  
Vol 421 ◽  
Author(s):  
I.P. Koutzarov ◽  
C.H. Edirisinghe ◽  
H.E. Ruda ◽  
L.Z. Jedral ◽  
Q. Liu ◽  
...  
Keyword(s):  
Band Gap ◽  
Surface Passivation ◽  
Dielectric Film ◽  
Surface Recombination ◽  
Orientation Dependence ◽  
Film Deposition ◽  
Surface Recombination Velocity ◽  
Strong Increase ◽  
X Ray ◽  
Recombination Velocity

AbstractWe report on the orientation dependence ((100), (110) and (111) ) of photoluminescence (PL), photoreflectance (PR) and Surface Photo-Voltage (SPV) for sulfur passivated bulk semiinsulating (SI) GaAs. Near band gap PL peak intensities (bound-exciton and acceptor-related) were enhanced following (NH4)2S or S2Cl2 treatment of GaAs for all orientations. The reduction of surface recombination velocity (from PL data) was orientation dependent and especially pronounced for the case of (111)A and (111)B orientations. The effect of thin dielectric layers deposited on S-treated surfaces was also investigated, particularly for (100) and (111)A orientations. SPV data shows a strong increase in the above band gap signal after both Streatment and dielectric film deposition, which was higher than that measured for only S-treated surfaces. PR data showed an increase in the interfacial electric field following deposition of dielectric film. The results of absolute S-surface coverage measurements using particle-induced X-ray emission measurements were correlated with the optical characteristics.

scholarly journals Fabrication of Novel III-N and III-V Modulator Structures by ECR Plasma Etching

1995 ◽  
Vol 405 ◽  
Author(s):  
S. J. Pearton ◽  
C. R. Abernathy ◽  
J. D. MacKenzie ◽  
J. R. Mileham ◽  
R. J Shul ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Plasma Etching ◽  
Chemical Etching ◽  
High Surface ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Ecr Plasma ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Recombination Velocity

AbstractQuantum well microdisk laser structures have been fabricated in the GaN/InGaN, GaAs/AlGaAs and GaAs/InGaP systems using a combination of ECR dry etching (Cl2/CH4/H2/Ar, BC13/Ar or CH4/H2/Ar plasma chemistries respectively) and subsequent wet chemical etching of a buffer layer underlying the quantum wells. While wet etchants such as HF/H2O and HCI/HNO3/H2O are employed for AlGaAs and InGaP, respectively, a new KOH-based solution has been developed for AlN which is completely selective over both GaN and InGaN. Typical mask materials include PR or SiNx, while the high surface recombination velocity of exposed AlGaAs (∼105cm·sec-1) requires encapsulation with ECR-CVD SiNx to stabilize the optical properties of the modulators.

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