Monte Carlo Modelisation of Photoexcited Carriers Relaxation Including Auger Effect in Narrow Band Gap InGaAs

2009 ◽  
Vol 1230 ◽  
Author(s):  
Eric Tea ◽  
Frederic Aniel
Keyword(s):  
Monte Carlo ◽  
Band Gap ◽  
Carrier Concentration ◽  
High Efficiency ◽  
Carrier Lifetime ◽  
Narrow Band ◽  
Monte Carlo Model ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Auger Effect

AbstractThe Auger effect is one of the fastest recombination mechanisms in narrow band gap semiconductors at high carrier concentration. This regime is of great interest for high efficiency hot carrier solar cells application and is also involed in many optical devices. Therefore, the knowledge of this limitting process is required for the determination of carrier lifetime useful to accurate solar cell efficiency calculations. For the first time, we present a carrier lifetime study versus carrier concentration in InGaAs based on a Monte Carlo model where the Auger effect is included as a relaxation mecanism.

Solar Cell Efficiency, Self-Assembly, and Dipole–Dipole Interactions of Isomorphic Narrow-Band-Gap Molecules

2012 ◽  
Vol 134 (40) ◽  
pp. 16597-16606 ◽  
Author(s):  
Christopher J. Takacs ◽  
Yanming Sun ◽  
Gregory C. Welch ◽  
Louis A. Perez ◽  
Xiaofeng Liu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Self Assembly ◽  
Narrow Band ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Dipole Interactions

scholarly journals Tunable Narrow Band Gap Absorbers For Ultra High Efficiency Solar Cells

2012 ◽  
Author(s):  
Salah M. Bedair ◽  
◽  
John R. Hauser ◽  
Nadia Elmasry ◽  
Peter C. Colter ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
High Efficiency ◽  
Narrow Band ◽  
High Efficiency Solar Cells

scholarly journals Wide Band-Gap 3,4-Difluorothiophene-Based Polymer with 7% Solar Cell Efficiency: An Alternative to P3HT

2015 ◽  
Vol 27 (12) ◽  
pp. 4184-4187 ◽  
Author(s):  
Jannic Wolf ◽  
Federico Cruciani ◽  
Abdulrahman El Labban ◽  
Pierre M. Beaujuge
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

Hydrogenated CeO2−xSx mesoporous hollow spheres for enhanced solar driven water oxidation

2016 ◽  
Vol 52 (12) ◽  
pp. 2521-2524 ◽  
Author(s):  
Yuting Xiao ◽  
Yajie Chen ◽  
Ying Xie ◽  
Guohui Tian ◽  
Shien Guo ◽  
...  
Keyword(s):  
Synergistic Effect ◽  
Band Gap ◽  
Carrier Concentration ◽  
Water Oxidation ◽  
Doping Level ◽  
Oxygen Vacancies ◽  
Narrow Band ◽  
Hollow Spheres ◽  
Sulfur Doping

Hydrogenated CeO2−xSx mesoporous hollow spheres were prepared and exhibited much higher rates of O2 evolution than CeO2 and CeO2−xSx due to the synergistic effect of high sulfur doping level, narrow band gap, moderate oxygen vacancies and higher carrier concentration.

Improving solar cell efficiency using photonic band-gap materials

2007 ◽  
Vol 91 (17) ◽  
pp. 1599-1610 ◽  
Author(s):  
Marian Florescu ◽  
Hwang Lee ◽  
Irina Puscasu ◽  
Martin Pralle ◽  
Lucia Florescu ◽  
...  
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Photonic Band Gap ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Photonic Band Gap Materials ◽  
Photonic Band

scholarly journals Block Textured a-Si:H Solar Cell

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Seung Jae Moon ◽  
Chang Min Keum ◽  
Ju-Yeon Kim ◽  
Jin Kuk Kim ◽  
Byung Seong Bae
Keyword(s):  
Solar Cell ◽  
Glass Substrate ◽  
High Efficiency ◽  
Light Trapping ◽  
Steep Slope ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Block Height ◽  
Etching Profile ◽  
Glass Etching

A series of etching experiments on light trapping structure have been carried out by glass etching. The block structure provides long light traveling path and a constant distance between the cathode and anode electrodes regardless of the block height, which results in higher efficiency of the block textured solar cell. In terms of etching profile of the glass substrate, the addition of NH4F resulted in the smooth and clean etching profile, and the steep slope of the block was obtained by optimizing the composition of etching solution. For a higher HF concentration, a more graded slope was obtained and the addition of HNO3and NH4F provided steep slope and clean etching profile. The effects of the block textured glass were verified by a comparison of the solar cell efficiency. For the textured solar cell, the surface was much rougher than that of the plain glass, which also contributes to the improvement of the efficiency. We accomplished block shaped light trapping structure for the first time by wet etching of the glass substrate, which enables the high efficiency thin film solar cell with the aid of the good step coverage deposition.

scholarly journals Graded Carrier Concentration Absorber Profile for High Efficiency CIGS Solar Cells

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Antonino Parisi ◽  
Riccardo Pernice ◽  
Vincenzo Rocca ◽  
Luciano Curcio ◽  
Salvatore Stivala ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Carrier Concentration ◽  
High Efficiency ◽  
Energy Gap ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Doping Density ◽  
Cigs Solar Cells

We demonstrate an innovative CIGS-based solar cells model with a graded doping concentration absorber profile, capable of achieving high efficiency values. In detail, we start with an in-depth discussion concerning the parametrical study of conventional CIGS solar cells structures. We have used the wxAMPS software in order to numerically simulate cell electrical behaviour. By means of simulations, we have studied the variation of relevant physical and chemical parameters—characteristic of such devices—with changing energy gap and doping density of the absorber layer. Our results show that, in uniform CIGS cell, the efficiency, the open circuit voltage, and short circuit current heavily depend on CIGS band gap. Our numerical analysis highlights that the band gap value of 1.40 eV is optimal, but both the presence of Molybdenum back contact and the high carrier recombination near the junction noticeably reduce the crucial electrical parameters. For the above-mentioned reasons, we have demonstrated that the efficiency obtained by conventional CIGS cells is lower if compared to the values reached by our proposed graded carrier concentration profile structures (up to 21%).

Optimized Wet Processes and PECVD for High-Efficiency Solar Cells

2012 ◽  
Vol 195 ◽  
pp. 297-300 ◽  
Author(s):  
I. Kashkoush ◽  
G. Chen ◽  
D. Nemeth ◽  
J. Rieker
Keyword(s):  
High Efficiency ◽  
Semiconductor Industry ◽  
Stacking Faults ◽  
Surface Preparation ◽  
Gate Oxide ◽  
Critical Surface ◽  
Solar Cell Efficiency ◽  
Cell Parameters ◽  
Cell Efficiency ◽  
High Efficiency Solar Cells

The semiconductor industry considers wet cleans to be critical surface preparation steps. The Si/SiO2 interface, for example, is very critical to achieve high gate oxide integrity and avoid leakage or stacking faults. Similarly, the solar industry has seen the value of wet processes to achieve best cell performance. In this study, we highlight the effect of pre-cleans, texturization and final cleans on cell parameters. We also studied the importance of coupling these wet cleaning and texturization steps with the PECVD steps to achieve the film quality required for highest solar cell efficiency.

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