Numerical Simulation of Nonadiabatic Electron Excitation in the Strong Field Regime. 2. Linear Polyene Cations

Cliff and Lorimer (1) have proposed a simple approach to thin foil x-ray analy sis based on the ratio of x-ray peak intensities. However, there are several experimental pitfalls which must be recognized in obtaining the desired x-ray intensities. Undesirable x-ray induced fluorescence of the specimen can result from various mechanisms and leads to x-ray intensities not characteristic of electron excitation and further results in incorrect intensity ratios.In measuring the x-ray intensity ratio for NiAl as a function of foil thickness, Zaluzec and Fraser (2) found the ratio was not constant for thicknesses where absorption could be neglected. They demonstrated that this effect originated from x-ray induced fluorescence by blocking the beam with lead foil. The primary x-rays arise in the illumination system and result in varying intensity ratios and a finite x-ray spectrum even when the specimen is not intercepting the electron beam, an ‘in-hole’ spectrum. We have developed a second technique for detecting x-ray induced fluorescence based on the magnitude of the ‘in-hole’ spectrum with different filament emission currents and condenser apertures.

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Scattering-angle dependence of signal/background ratio of inner-shell electron excitation loss in EELS

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100075701 ◽

1983 ◽

Vol 41 ◽

pp. 390-391

Author(s):

T. Oikawa ◽

M. Inoue ◽

T. Honda ◽

Y. Kokubo

Keyword(s):

Energy Loss ◽

Electron Excitation ◽

Heavy Elements ◽

Background Intensity ◽

Light Elements ◽

Energy Analyzer ◽

High Background ◽

Scattering Angle ◽

Angle Dependence ◽

Shell Electron

EELS allows us to make analysis of light elements such as hydrogen to heavy elements of microareas on the specimen. In energy loss spectra, however, elemental signals ride on a high background; therefore, the signal/background (S/B) ratio is very low in EELS. A technique which collects the center beam axial-symmetrically in the scattering angle is generally used to obtain high total intensity. However, the technique collects high background intensity together with elemental signals; therefore, the technique does not improve the S/B ratio. This report presents the experimental results of the S/B ratio measured as a function of the scattering angle and shows the possibility of the S/B ratio being improved in the high scattering angle range.Energy loss spectra have been measured using a JEM-200CX TEM with an energy analyzer ASEA3 at 200 kV.Fig.l shows a typical K-shell electron excitation edge riding on background in an energy loss spectrum.

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High resolution STEM imaging study on high Tc superconductor YBa2CuaO7-x

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106478 ◽

1988 ◽

Vol 46 ◽

pp. 882-883

Author(s):

H.-J. Ou ◽

J. M. Cowley

Keyword(s):

Crystal Structure ◽

High Resolution ◽

Grain Boundary ◽

Strong Field ◽

Imaging Study ◽

Structure Defects ◽

High Tc ◽

High Tc Superconductor ◽

Diffraction Patterns ◽

Lattice Planes

Using the dedicate VG-HB5 STEM microscope, the crystal structure of high Tc superconductor of YBa2Cu3O7-x has been studied via high resolution STEM (HRSTEM) imaging and nanobeam (∽3A) diffraction patterns. Figure 1(a) and 2(a) illustrate the HRSTEM image taken at 10' times magnification along [001] direction and [100] direction, respectively. In figure 1(a), a grain boundary with strong field contrast is seen between two crystal regions A and B. The grain boundary appears to be parallel to a (110) plane, although it is not possible to determine [100] and [001] axes as it is in other regions which contain twin planes [3]. Following the horizontal lattice lines, from left to right across the grain boundary, a lattice bending of ∽4° is noticed. Three extra lattice planes, indicated by arrows, were found to terminate at the grain boundary and form dislocations. It is believed that due to different chemical composition, such structure defects occur during crystal growth. No bending is observed along the vertical lattice lines.

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Electron Scattering in Solids

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100133618 ◽

1990 ◽

Vol 48 (2) ◽

pp. 4-5

Author(s):

Ryuichi Shimizu ◽

Ze-Jun Ding

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Angular Distribution ◽

Elastic Scattering ◽

Electron Scattering ◽

Cross Sections ◽

Expansion Method ◽

Electron Excitation ◽

Partial Wave Expansion ◽

Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

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EXELFS Studies of Carbon Fibers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100133953 ◽

1990 ◽

Vol 48 (2) ◽

pp. 72-73

Author(s):

V. Serin ◽

K. Hssein ◽

G. Zanchi ◽

J. Sévely

Keyword(s):

Carbon Fibers ◽

Energy Analysis ◽

Electron Excitation ◽

Complex Structures ◽

High Modulus ◽

Promising Technique ◽

X Ray ◽

Fine Structures ◽

X Ray Absorption

The present developments of electron energy analysis in the microscopes by E.E.L.S. allow an accurate recording of the spectra and of their different complex structures associated with the inner shell electron excitation by the incident electrons (1). Among these structures, the Extended Energy Loss Fine Structures (EXELFS) are of particular interest. They are equivalent to the well known EXAFS oscillations in X-ray absorption spectroscopy. Due to the EELS characteristic, the Fourier analysis of EXELFS oscillations appears as a promising technique for the characterization of composite materials, the major constituents of which are low Z elements. Using EXELFS, we have developed a microstructural study of carbon fibers. This analysis concerns the carbon K edge, which appears in the spectra at 285 eV. The purpose of the paper is to compare the local short range order, determined by this way in the case of Courtauld HTS and P100 ex-polyacrylonitrile carbon fibers, which are high tensile strength (HTS) and high modulus (HM) fibers respectively.

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Valence electron energy loss spectroscopy in reflection geometry

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100153865 ◽

1989 ◽

Vol 47 ◽

pp. 378-379

Author(s):

J. Liu ◽

J. M. Cowley

Keyword(s):

Energy Loss ◽

Valence Electron ◽

Interband Transition ◽

Specular Reflection ◽

Three Dimensional ◽

Electron Excitation ◽

Transmission Electron ◽

Yield Information ◽

Valence Bands ◽

Excitation Processes

The low energy loss region of a EELS spectrum carries information about the valence electron excitation processes (e.g., collective excitations for free electron like materials and interband transitions for insulators). The relative intensities and the positions of the interband transition energy loss peaks observed in EELS spectra are determined by the joint density of states (DOS) of the initial and final states of the excitation processes. Thus it is expected that EELS in reflection mode could yield information about the perturbation of the DOS of the conduction and valence bands of the bulk crystals caused by the termination of the three dimensional periodicity at the crystal surfaces. The experiments were performed in a Philipps 400T transmission electron microscope operated at 120 kV. The reflection EELS spectra were obtained by a Gatan 607 EELS spectrometer together with a Tracor data acquisition system and the resolution of the spectrometer was about 0.8 eV. All the reflection spectra are obtained from the specular reflection spots satisfying surface resonance conditions.

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