Chemical Kinetics of Photoinduced Chemical Vapor Deposition: Silica Coating of Gas-Phase Nanoparticles

2011 ◽  
Vol 116 (1) ◽  
pp. 104-114 ◽  
Author(s):  
Adam M. Boies ◽  
Steven Calder ◽  
Pulkit Agarwal ◽  
Pingyan Lei ◽  
Steven L. Girshick
2001 ◽  
Vol 22 (13) ◽  
pp. 1366-1376 ◽  
Author(s):  
Stanislav Ya. Umanskii ◽  
Konstantin P. Novoselov ◽  
Airat Kh. Minushev ◽  
Magdalena Siodmiak ◽  
Gernot Frenking ◽  
...  

Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.


RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18493-18499
Author(s):  
Sergio Sánchez-Martín ◽  
S. M. Olaizola ◽  
E. Castaño ◽  
E. Urionabarrenetxea ◽  
G. G. Mandayo ◽  
...  

Impact of deposition parameters, microstructure and growth kinetics analysis of ZnO grown by Aerosol-assisted Chemical Vapor Deposition (AACVD).


Sign in / Sign up

Export Citation Format

Share Document