Infrared Spectroscopy and Phase Behavior of n-Butane Aerosols and Thin Films at Cryogenic Temperatures

2013 ◽  
Vol 117 (46) ◽  
pp. 11745-11759 ◽  
Author(s):  
E. Kathrin Lang ◽  
Kerry J. Knox ◽  
Takamasa Momose ◽  
Ruth Signorell

2007 ◽  
Vol 40 (14) ◽  
pp. 5054-5059 ◽  
Author(s):  
Karim Aissou ◽  
Thierry Baron ◽  
Martin Kogelschatz ◽  
Alina Pascale


2008 ◽  
Vol 41 (9) ◽  
pp. 3199-3208 ◽  
Author(s):  
Wendy van Zoelen ◽  
Terhi Asumaa ◽  
Janne Ruokolainen ◽  
Olli Ikkala ◽  
Gerrit ten Brinke


1995 ◽  
Vol 418 ◽  
Author(s):  
David J. Beardall ◽  
Tod R. Botcher ◽  
Charles A. Wight

AbstractThe initial step of the thermal decomposition of NTO (5-nitro-2,4-dihydro-3H-1,2,4- triazol-3-one) is determined by pulsed infrared laser pyrolysis of thin films. Rapid heating of the film and quenching to 77 K allows one to trap the initial decomposition products in the condensed phase and analyze them using transmission Fourier-transform infrared spectroscopy. The initial decomposition product is CO2; NO2 and HONO are not observed. We propose a new mechanism for NTO decomposition in which CO2 is formed.



Polymer ◽  
2010 ◽  
Vol 51 (16) ◽  
pp. 3660-3668 ◽  
Author(s):  
Monica Bertoldo ◽  
Massimiliano Labardi ◽  
Cinzia Rotella ◽  
Simone Capaccioli


2000 ◽  
Vol 61 (14) ◽  
pp. 9665-9668 ◽  
Author(s):  
Amlan Biswas ◽  
M. Rajeswari ◽  
R. C. Srivastava ◽  
Y. H. Li ◽  
T. Venkatesan ◽  
...  


2015 ◽  
Vol 60 (1) ◽  
pp. 365-370 ◽  
Author(s):  
M. Granata ◽  
L. Balzarini ◽  
J. Degallaix ◽  
V. Dolique ◽  
R. Flaminio ◽  
...  

Abstract In order to study the internal friction of thin films a nodal suspension system called GeNS (Gentle Nodal Suspension) has been developed. The key features of this system are: i) the possibility to use substrates easily available like silicon wafers; ii) extremely low excess losses coming from the suspension system which allows to measure Q factors in excess of 2×108 on 3” diameter wafers; iii) reproducibility of measurements within few percent on mechanical losses and 0.01% on resonant frequencies; iv) absence of clamping; v) the capability to operate at cryogenic temperatures. Measurements at cryogenic temperatures on SiO2 and at room temperature only on Ta2O5 films deposited on silicon are presented.



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