Structure, Morphology, and Electrochemical Investigation of LiMn2O4 Thin Film Cathodes Deposited by Radio Frequency Sputtering for Lithium Microbatteries

2009 ◽  
Vol 113 (26) ◽  
pp. 11373-11380 ◽  
Author(s):  
Bing-Joe Hwang ◽  
Chien-Yu Wang ◽  
Ming-Yao Cheng ◽  
Raman Santhanam
Keyword(s):  
Thin Film ◽  
Radio Frequency ◽  
Electrochemical Investigation ◽  
Radio Frequency Sputtering ◽  
Structure Morphology

Growth of amorphous TeOx (2≤x≤3) thin film by radio frequency sputtering

2007 ◽  
Vol 101 (8) ◽  
pp. 084910 ◽  
Author(s):  
Namrata Dewan ◽  
Vinay Gupta ◽  
K. Sreenivas ◽  
R. S. Katiyar
Keyword(s):  
Thin Film ◽  
Radio Frequency ◽  
Radio Frequency Sputtering

Thin-film multi-layer capacitors using Bi2Mg2/3Nb4/3O7 (BMNO) pyrochlore thin films via radio-frequency sputtering

2015 ◽  
Vol 15 (11) ◽  
pp. 1384-1388 ◽  
Author(s):  
Ji-Hyun Park ◽  
Ji-Ho Eom ◽  
Byeong-Ju Park ◽  
Ki-Tae Park ◽  
Soo-Yeol Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Radio Frequency ◽  
Radio Frequency Sputtering

Transmission Electron Microscopy Stjudy of Initerface Microstrucure in ZnO Thin Films Grown on Various Substrates (Glass,Au,Sl,α-Al2O3)

1996 ◽  
Vol 441 ◽  
Author(s):  
Y. Yoshino ◽  
S. Iwasa ◽  
H. Aoki ◽  
Y. Deguchi ◽  
Y. Yamamoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Radio Frequency ◽  
Amorphous Layer ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Axis Orientation ◽  
Radio Frequency Sputtering ◽  
Transmission Electron ◽  
Glass Interface

AbstractZinc oxide (ZnO) thin films have been grown by radio frequency sputtering on glass, Al, Au and R cut sapphire substrates. Microstructures of the ZnO / substrate interface have been observed by transmission electron microscope. The purpose of this study is to elucidate the crystal growth mechanism of ZnO thin films using various substrates that have different crystallinity and crystal structures. An amorphous layer with a thickness of about 5 nm is observed at the ZnO/glass interface, and c axis orientation perpendicular to the substrate is observed on this amorphous layer. Mianstructurts at the ZnO/buffer metal interface, on the other hand, are significantly different from those of ZnO/glass interface. A thick amorphous layer of about 15 nm is observed at the ZnO/Al interface, presumably consisting of Al2O3 interface layer material. ZnO thin film grown on Au buffer layers is distinctly different from both ZnO on glass and Al. No amorphous layer is formed at the ZnO/Au interface, and c axis orientation begins directly from the Au surface. Epitaxially grown ZnO thin film is confirmed on a R-cut sapphire substrate. These results dearly demonstrate that ZnO thin films prepared by radio frequency sputtering are strongly influenced by the substrate surface crystallinity at the topmost layer of the substrate.

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