Dye Sensitization of Nanocrystalline Tin Oxide by Perylene Derivatives

1997 ◽  
Vol 101 (23) ◽  
pp. 4490-4493 ◽  
Author(s):  
Suzanne Ferrere ◽  
Arie Zaban ◽  
Brian A. Gregg
Keyword(s):  
Tin Oxide ◽  
Dye Sensitization ◽  
Perylene Derivatives

ChemInform Abstract: Dye Sensitization of Nanocrystalline Tin Oxide by Perylene Derivatives.

ChemInform ◽  
2010 ◽  
Vol 28 (39) ◽  
pp. no-no
Author(s):  
S. FERRERE ◽  
A. ZABAN ◽  
B. A. GREGG
Keyword(s):  
Tin Oxide ◽  
Dye Sensitization ◽  
Perylene Derivatives

Preparation of Electro-codeposited Film Consisting of Phthalocyanine and Perylene Derivatives

1999 ◽  
Vol 03 (04) ◽  
pp. 310-315 ◽  
Author(s):  
TERUHISA KUDO ◽  
MUTSUMI KIMURA ◽  
KENJI HANABUSA ◽  
HIROFUSA SHIRAI
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Cathodic Polarization ◽  
Supporting Electrolyte ◽  
Glass Electrode ◽  
Aluminum Electrode ◽  
Cyclic Voltammogram ◽  
Coated Glass ◽  
Ito Electrode ◽  
Perylene Derivatives

A novel electro-codeposited film was homogeneously obtained on an indium tin oxide (ITO)-coated glass electrode by cathodic polarization of a solution of 2,9,16,23-tetracarboxyphthalocyaninatomagnesium(II) ( Mg II taPc ), N,N′-4-hydroxyphenyl-3,4,9,10-perylenetetra-carboxylic-diimide (4-hph-PTC) and ZnCl 2 as supporting electrolyte in N,N-dimethylformamide (DMF). The cyclic voltammogram for the codeposited film showed a reduction at −0.8 V vs SCE which was assigned to the reduction of Mg II taPc and one at −1.5 V vs SCE which was assigned to the reduction of 4-hph-PTC. A device based on the codeposited film was prepared by the formation of an aluminum electrode on the codeposited film. The device exhibited rectification and photoconduction. The results suggest that the codeposited film forms a number of p-n junction interfaces which are distributed on the ITO electrode.

Fabrication of p-n Junction Diodes from Phthalocyanine and Electropolymerized Perylene Derivatives

1998 ◽  
Vol 02 (03) ◽  
pp. 231-235 ◽  
Author(s):  
TERUHISA KUDO ◽  
MUTSUMI KIMURA ◽  
KENJI HANABUSA ◽  
HIROFUSA SHIRAI
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Metal Ion ◽  
Supporting Electrolyte ◽  
Coated Glass ◽  
Electrodeposited Film ◽  
Perylene Derivatives ◽  
Glass Electrodes ◽  
P Type

Perylene derivative films doped with metal ion were deposited on indium tin oxide ( ITO )-coated glass electrodes by electrodeposition from solutions of N, N″-4-hydroxyphenyl-3,4,9,10-perylenetetracarboxylic-diimide (hph-PTC) and CaCl 2, PbCl 2, ZnCl 2 or CoBr 2 as a supporting electrolyte in N, N-dimethylformamide ( DMF ). The p-n junction diodes consisting of a p-type phthalocyanine (Pc) sublimed film and an n-type hph-PTC electrodeposited film doped with metal ion exhibited Zener-type breakdown and photocurrent enhancement. The device with a p-n junction consisting of a Pc sublimed film and an hph-PTC electrodeposited film doped with Ca 2+ showed the largest amplification of photocurrent. This result suggests that the dopant ion in hph-PTC is an important factor in the preparation of p-n junction diodes.

Dye sensitization of nanocrystalline TiO2 by perylene derivatives

2002 ◽  
Vol 128 (3) ◽  
pp. 299-304 ◽  
Author(s):  
Shu Wang ◽  
Yuliang Li ◽  
Chimin Du ◽  
Zhiqiang Shi ◽  
Shengxiong Xiao ◽  
...  
Keyword(s):  
Nanocrystalline Tio2 ◽  
Dye Sensitization ◽  
Perylene Derivatives

Biotemplated facile synthesis of three‐dimensional micro/nanoporous tin oxide: improving the flammable and mechanical properties of flexible PVC

2019 ◽  
Vol 14 (8) ◽  
pp. 828-830 ◽  
Author(s):  
Weihua Meng ◽  
Weihong Wu ◽  
Weiwei Zhang ◽  
Luyao Cheng ◽  
Yunhong Jiao ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Tin Oxide ◽  
Three Dimensional ◽  
Facile Synthesis

Imaging Techniques for the Study of Photodegradation of Dye Sensitization Cells*

1998 ◽  
Vol 1 (1) ◽  
pp. 53-59
Author(s):  
M. Turrión ◽  
B. Macht ◽  
P. Salvador ◽  
H. Tributsch
Keyword(s):  
Imaging Techniques ◽  
Dye Sensitization

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

Functional Gradient Transparent Conducting Oxide Nanowire Arrays as Monophasic Schottky-Barrier Free Memristors for Bipolar Linear Switching

2020 ◽  
Author(s):  
Thomas Herzog ◽  
Naomi Weitzel ◽  
Sebastian Polarz
Keyword(s):  
Schottky Barrier ◽  
Data Storage ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Electrical Potential ◽  
High Resistance State ◽  
Nanowire Arrays ◽  
Metal Metal ◽  
Resistance State ◽  
Barrier Free

<div><div><div><p>One of the fascinating properties of metal-semiconductor Schottky-barriers, which has been observed for some material combinations, is memristive behavior. Memristors are smart, since they can reversibly switch between a low resistance state and a high resistance state. The devices offer a great potential for advanced computing and data storage, including neuromorphic networks and resistive random-access memory. However, as for many other cases, the presence of a real interface (metal - metal oxide) has numerous disadvantages. The realization of interface-free, respectively Schottky-barrier free memristors is highly desirable. The aim of the current paper is the generation of nanowire arrays with each nanorod possessing the same crystal phase (Rutile) and segments only differing in composition. The electric conductivity is realized by segments made of highly-doped antimony tin oxide (ATO) transitioning into pure tin oxide (TO). Complex nanoarchitectures are presented, which include ATO-TO, ATO-TO-ATO nanowires either with a stepwise distribution of antimony or as a graded functional material. The electrical characterization of the materials reveals that the introduction of memristive properties in such structures is possible. The special features observed in voltage-current (IV) curves are correlated to the behavior of mobile oxygen vacancies (VO..) at different values of applied electrical potential.</p></div></div></div>

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