Dopant concentration profiles in conducting poly(p-phenylenevinylene) by Rutherford backscattering spectrometry

1990 ◽  
Vol 23 (15) ◽  
pp. 3675-3682 ◽  
Author(s):  
Michael A. Masse ◽  
Russell J. Composto ◽  
Richard A. L. Jones ◽  
Frank E. Karasz
Keyword(s):  
Dopant Concentration ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Concentration Profiles

Stoichiometric Determination of Graphite Intercalation Compounds Using Rutherford Backscatiering Spectrometry

1983 ◽  
Vol 27 ◽  
Author(s):  
L. Salamanca-Riba ◽  
B.S. Elman ◽  
M.S. Dresselhaus ◽  
T. Venkatesan
Keyword(s):  
Experimental Error ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Intercalation Compounds ◽  
Graphite Intercalation Compounds ◽  
X Ray ◽  
Donor And Acceptor ◽  
Graphite Intercalation ◽  
Non Destructive

ABSTRACTRutherford backscattering spectrometry (RBS) is used to characterize the stoichiometry of graphite intercalation compounds (GIC). Specific application is made to several stages of different donor and acceptor compounds and to commensurate and incommensurate intercalants. A deviation from the theoretical stoichiometry is measured for most of the compounds using this non-destructive method. Within experimental error, the RBS results agree with those obtained from analysis of the (00ℓ) x-ray diffractograms and weight uptake measurements on the same samples.

scholarly journals Rutherford backscattering spectrometry analysis of InGaAs nanostructures

2019 ◽  
Vol 37 (2) ◽  
pp. 020601 ◽  
Author(s):  
Grazia Laricchiuta ◽  
Wilfried Vandervorst ◽  
Ian Vickridge ◽  
Matej Mayer ◽  
Johan Meersschaut
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Spectrometry Analysis

Tetragonal Phase in Ge Doped HfO2 Films on Si Investigated by X-ray Absorption Spectroscopy

2009 ◽  
Vol 1194 ◽  
Author(s):  
Leonardo Miotti ◽  
Karen Paz Bastos ◽  
Cláudio Radtke ◽  
Gerald Lucovsky
Keyword(s):  
Absorption Spectroscopy ◽  
Tetragonal Phase ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Rapid Thermal Anneal ◽  
X Ray ◽  
X Ray Absorption ◽  
Ge Doping

AbstractThe stabilization of the tetragonal phase of 5 nm thick HfO2 films by Ge doping is investigated using x-ray absorption spectroscopy around O and Ge Kedges and by Rutherford backscattering spectrometry. We show that Ge concentrations higher than ˜5at.% are not stable during rapid thermal anneal at temperatures as low as 750°C and that the tetragonal phase of HfO2 is achieved at this Ge concentration.

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