Carbon Nanotube Field-Effect Transistors for Use as Pass Transistors in Integrated Logic Gates and Full Subtractor Circuits

ACS Nano ◽  
2012 ◽  
Vol 6 (5) ◽  
pp. 4013-4019 ◽  
Author(s):  
Li Ding ◽  
Zhiyong Zhang ◽  
Tian Pei ◽  
Shibo Liang ◽  
Sheng Wang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Gates ◽  
Integrated Logic

Logic Gates Based on Carbon Nanotube Field-Effect Transistors with SiNxPassivation Films

2010 ◽  
Vol 49 (6) ◽  
pp. 06GG02 ◽  
Author(s):  
Takaomi Kishimoto ◽  
Yasuhide Ohno ◽  
Kenzo Maehashi ◽  
Koichi Inoue ◽  
Kazuhiko Matsumoto
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Gates

scholarly journals Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

2014 ◽  
Vol 6 (3) ◽  
pp. 287-292 ◽  
Author(s):  
Jingqi Li ◽  
Weisheng Yue ◽  
Zaibing Guo ◽  
Yang Yang ◽  
Xianbin Wang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors
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