More on the low-temperature magnetism of stable single domain magnetite: Reversibility and non-stoichiometry

2004 ◽  
Vol 31 (6) ◽  
pp. n/a-n/a ◽  
Author(s):  
Brian Carter-Stiglitz ◽  
Bruce Moskowitz ◽  
Michael Jackson
PLoS ONE ◽  
2013 ◽  
Vol 8 (3) ◽  
pp. e57070 ◽  
Author(s):  
Jens Baumgartner ◽  
Luca Bertinetti ◽  
Marc Widdrat ◽  
Ann M. Hirt ◽  
Damien Faivre

2002 ◽  
Vol 372-376 ◽  
pp. 1200-1203 ◽  
Author(s):  
E.S Reddy ◽  
E.A Goodilin ◽  
M Tarka ◽  
M Zeisberger ◽  
G.J Schmitz

2010 ◽  
Vol 645-648 ◽  
pp. 171-174 ◽  
Author(s):  
Jean Lorenzzi ◽  
Georgios Zoulis ◽  
Olivier Kim-Hak ◽  
Nikoletta Jegenyes ◽  
Davy Carole ◽  
...  

We report the results of a systematic investigation performed to reduce the residual n-type doping level of the 3C-SiC layers grown by the VLS mechanism on 6H-SiC(0001) on-axis substrate. This new approach, termed “High purity VLS” leads to low doped and low compensated material, which was confirmed by Raman and Low Temperature Photoluminescence spectroscopy. The resultant 3C morphology remains typical of single-domain layers and the n-type doping level could be estimated around 6x1016 cm-3.


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