scholarly journals Electron Trapping in Magnetic Mirror Structures at the Edge of Magnetopause Flux Ropes

2021 ◽  
Vol 126 (4) ◽  
Author(s):  
S. L. Robertson ◽  
J. P. Eastwood ◽  
J. E. Stawarz ◽  
H. Hietala ◽  
T. D. Phan ◽  
...  
2020 ◽  
Author(s):  
Sadie Robertson ◽  
Jonathan Eastwood ◽  
Julia Stawarz ◽  
Heli Hietala ◽  
Tai Phan ◽  
...  

<p>Magnetic reconnection is a fundamental plasma physics process which governs energy and mass transfer from the solar wind into the Earth’s magnetosphere. Electron acceleration during reconnection has been widely investigated with multiple mechanisms proposed. Many of these mechanisms involve flux ropes: twisted magnetic field structures formed during reconnection. Drake et al. 2006 suggest that contracting magnetic islands (or flux ropes in 3D) could trap and energise electrons by a Fermi acceleration process.</p><p>Whilst previous missions have observed and characterised flux ropes, the temporal resolution of the data was typically not great enough to study structures in detail, particularly on electron scales. Here we investigate magnetopause flux ropes using data from NASA’s four spacecraft Magnetospheric Multiscale mission (MMS). MMS measures the thermal electron and ion 3D distribution at 30 msec and 150 msec time resolution, respectively, and at spacecraft separations down to a few kilometers.</p><p>We focus on electron pitch angle distributions and examine how they can be used to investigate magnetopause flux ropes. In particular, the distributions are used to identify electron trapping in magnetic mirror structures on the magnetospheric edge of the flux ropes. These features are found to have extended 3D structure along the body of the flux rope. We evaluate possible formation mechanisms, such as the mirror instability, and potential electron acceleration mechanisms, such as betatron and Fermi acceleration. Magnetic mirror structures could represent an important particle acceleration feature for flux ropes and magnetic reconnection.</p>


1981 ◽  
Vol 20 (S1) ◽  
pp. 255 ◽  
Author(s):  
Heihachi Matsumoto ◽  
Kokichi Sawada ◽  
Sotoju Asai ◽  
Makoto Hirayama ◽  
Koichi Nagasawa

2021 ◽  
pp. 108066
Author(s):  
R.A. Izmailov ◽  
B.J. O'Sullivan ◽  
M. Popovici ◽  
V.V. Afanas'ev
Keyword(s):  

2016 ◽  
Vol 43 (10) ◽  
pp. 4716-4724 ◽  
Author(s):  
J. P. Eastwood ◽  
T. D. Phan ◽  
P. A. Cassak ◽  
D. J. Gershman ◽  
C. Haggerty ◽  
...  

2015 ◽  
Vol 27 (44) ◽  
pp. 7137-7144 ◽  
Author(s):  
Daniel Headland ◽  
Shruti Nirantar ◽  
Withawat Withayachumnankul ◽  
Philipp Gutruf ◽  
Derek Abbott ◽  
...  

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.


1994 ◽  
Author(s):  
Vladislav I. Zimenko ◽  
Viacheslav V. Petrov ◽  
Vasyliy G. Kravets ◽  
Vasily V. Motuz

1994 ◽  
Vol 37 (9) ◽  
pp. 1671-1672 ◽  
Author(s):  
H.N. Upadhyay ◽  
R.K. Chanana ◽  
R. Dwivedi ◽  
S.K. Srivastava
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document