GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices

2001 ◽  
Vol 40 (Part 1, No. 6A) ◽  
pp. 3953-3959 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Mitsunari Itoh ◽  
Junji Saraie ◽  
Toshiyuki Yasui ◽  
Sanghoon Ha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Molecular Beam ◽  
Si Substrate ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Metalorganic Molecular Beam Epitaxy

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Active-Nitrogen-Doped P-Type ZnSe Grown by Gas-Source Molecular Beam Epitaxy for Blue-Light-Emitting Devices

1993 ◽  
Vol 32 (Part 2, No. 12A) ◽  
pp. L1725-L1727 ◽  
Author(s):  
Masayuki Imaizumi ◽  
Yasuyuki Endoh ◽  
Ken-ichi Ohtsuka ◽  
Toshiro Isu ◽  
Masahiro Nunoshita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Blue Light ◽  
Molecular Beam ◽  
Active Nitrogen ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Nitrogen Doped ◽  
Gas Source ◽  
P Type

1.54 μm Light emitting devices based on Er/O-doped Si layered structures grown by molecular beam epitaxy

2001 ◽  
Vol 17 (1-2) ◽  
pp. 65-69 ◽  
Author(s):  
W.-X. Ni ◽  
C.-X. Du ◽  
F. Duteil ◽  
A. Elfving ◽  
G.V. Hansson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Layered Structures ◽  
Light Emitting ◽  
Light Emitting Devices

Pseudomorphic ZnTe/AlSb/GaSb Heterostructures by Molecular Beam Epitaxy

1989 ◽  
Vol 161 ◽  
Author(s):  
D.L. Mathine ◽  
J. Han ◽  
M. Kobayashi ◽  
R.L. Gunshor ◽  
D.R. Menke ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Wide Bandgap ◽  
Near Band Edge ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Shallow Impurity ◽  
Edge Features ◽  
Low Temperature Photoluminescence

ABSTRACTA series of pseudomorphic ZnTe/AlSb/GaSb epilayer/epilayer heterostructures, aimed at the realization of novel wide bandgap light emitting devices, were grown by molecular beam epitaxy. The low temperature photoluminescence (PL) spectra of ZnTe epilayers showed dominant near-band-edge features related to free, and shallow impurity bound excitons. The PL could be seen at room temperature. Both GaSb and AlSb were doped n-type using a PbSe source.

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