scholarly journals Longitudinal unzipping of 2D transition metal dichalcogenides

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Suchithra Padmajan Sasikala ◽  
Yashpal Singh ◽  
Li Bing ◽  
Taeyoung Yun ◽  
Sung Hwan Koo ◽  
...  

Abstract Unzipping of the basal plane offers a valuable pathway to uniquely control the material chemistry of 2D structures. Nonetheless, reliable unzipping has been reported only for graphene and phosphorene thus far. The single elemental nature of those materials allows a straightforward understanding of the chemical reaction and property modulation involved with such geometric transformations. Here we report spontaneous linear ordered unzipping of bi-elemental 2D MX2 transition metal chalcogenides as a general route to synthesize 1D nanoribbon structures. The strained metallic phase (1T′) of MX2 undergoes highly specific longitudinal unzipping owing to the self-linearized oxygenation at chalcogenides. Stable dispersions of 1T′ MoS2 nanoribbons with widths of 10–120 nm and lengths up to ~4 µm are produced in water. Edge abundant 1T′ MoS2 nanoribbons reveal the hidden potential of idealized electrocatalysis for hydrogen evolution reactions at a competitive level with the precious Pt catalyst.

Nanophotonics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1675-1694 ◽  
Author(s):  
Yumei Jing ◽  
Baoze Liu ◽  
Xukun Zhu ◽  
Fangping Ouyang ◽  
Jian Sun ◽  
...  

AbstractDiffering from its bulk counterparts, atomically thin two-dimensional transition metal dichalcogenides that show strong interaction with light are considered as new candidates for optoelectronic devices. Either physical or chemical strategies can be utilized to effectively tune the intrinsic electronic structures for adopting optoelectronic applications. This review will focus on the different tuning strategies that include its physics principles, in situ experimental techniques, and its application of various optoelectronic devices.


2020 ◽  
Vol 49 (30) ◽  
pp. 10319-10327 ◽  
Author(s):  
Chunyu Xie ◽  
Pengfei Yang ◽  
Yahuan Huan ◽  
Fangfang Cui ◽  
Yanfeng Zhang

This Frontier highlights the roles of added salts in the chemical vapor deposition synthesis of two-dimensional transition metal dichalcogenides.


2021 ◽  
Author(s):  
Kaihui Liu ◽  
Yonggang Zuo ◽  
Can Liu ◽  
Liping Ding ◽  
Ruixi Qiao ◽  
...  

Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs), with their atomic thicknesses, high carrier mobility, fast charge transfer, and intrinsic spin-valley couplings, have been demonstrated one of the most appealing candidates for next-generation electronic and optoelectronic devices. The synthesis of TMDs with well-controlled crystallinity, quality and composition is essential to fully realize their promising applications. Similar to that in III-V semiconductor synthesis, the precise precursor supply is a precondition for controllable growth of TMDs. Although great efforts have been devoted to modulate the transition metal supply, few effective methods of chalcogen feeding control were developed. Herein we report a strategy of using active chalcogen monomer supply to grow TMDs and their alloys in a robust and controllable manner. It is found that at a high temperature, the active chalcogen monomers (such as S, Se, Te atoms or their mixtures) can be controllably released from metal chalcogenides and, thus, enable the synthesis of TMDs (MX2, M = Mo, W; X = S, Se, Te) with very high quality, e.g., MoS2 monolayers exhibit photoluminescent circular helicity of ~92%, comparable to the best exfoliated single-crystal flakes and close to the theoretical limit of unity. More intriguingly, a uniform quaternary TMD alloy with three different anions, i.e., MoS2(1-x-y)Se2xTe2y, was accomplished for the first time. Our mechanism study revealed that the active chalcogen monomers can bind and diffuse freely on a TMD surface, which enables the effective nucleation and reaction, quick chalcogen vacancy healing, and alloy formation during the growth. The chalcogen monomer supply strategy offers more degrees of freedom for the controllable synthesis of 2D compounds and their alloys, which will greatly benefit the development of high-end devices with desired 2D materials.


2021 ◽  
Author(s):  
Xinmao Yin ◽  
Chi Sin Tang ◽  
Yue Zheng ◽  
Jing Gao ◽  
Jing Wu ◽  
...  

This review outlines the semiconducting-(quasi)metallic phase transition of 2D-TMDs and discusses current developments in the application of this unique phase. Challenges and future developmental trends of TMD-based systems are also highlighted.


ACS Nano ◽  
2021 ◽  
Author(s):  
Miao Zhang ◽  
Martina Lihter ◽  
Tzu-Heng Chen ◽  
Michal Macha ◽  
Archith Rayabharam ◽  
...  

Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...


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