scholarly journals Author Correction: Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jian Zhi ◽  
Min Zhou ◽  
Zhen Zhang ◽  
Oliver Reiser ◽  
Fuqiang Huang
Keyword(s):  
Energy Storage ◽  
Semiconductor Oxides ◽  
Boron Doped

A Correction to this paper has been published: https://doi.org/10.1038/s41467-021-21705-3

Formation of Highly Conductive Boron-Doped Diamond on TiO2Nanotubes Composite for Supercapacitor or Energy Storage Devices

2015 ◽  
Vol 162 (10) ◽  
pp. A2085-A2092 ◽  
Author(s):  
M. Sawczak ◽  
M. Sobaszek ◽  
K. Siuzdak ◽  
J. Ryl ◽  
R. Bogdanowicz ◽  
...  
Keyword(s):  
Energy Storage ◽  
Energy Storage Devices ◽  
Boron Doped Diamond ◽  
Storage Devices ◽  
Boron Doped

scholarly journals Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jian Zhi ◽  
Min Zhou ◽  
Zhen Zhang ◽  
Oliver Reiser ◽  
Fuqiang Huang
Keyword(s):  
Energy Supply ◽  
Redox Reactions ◽  
Active Material ◽  
Electrochemical Capacitance ◽  
Trade Off ◽  
Semiconductor Oxides ◽  
Boron Doped ◽  
Electrochemically Active ◽  
Efficient Charge ◽  
Volumetric Capacitance

AbstractRealizing transparent and energy-dense supercapacitor is highly challenging, as there is a trade-off between energy storing capability and transparency in the active material film. We report here that interstitial boron-doped mesoporous semiconductor oxide shows exceptional electrochemical capacitance which rivals other pseudocapacitive materials, while maintaining its transparent characteristic. This improvement is credited to the robust redox reactions at interstitial boron-associated defects that transform inert semiconductor oxides into an electrochemically active material without affecting its transparency. By precisely tuning the level of doping, the pseudocapacitive reactivity of these materials is optimized, resulting in a volumetric capacitance up to 1172 F cm−3. Attributing to such efficient charge storage utilization on the active film, the fabricated transparent supercapacitor delivers a maximum areal energy density of 1.36 × 10−3 mWh cm−2 that is close to those of conventional pseudocapacitive materials, with nearly 100% capacitance retention after 15000 cycles and ultrahigh transparency (up to 85% transmittance at 550 nm). In addition, this device shows excellent durability and flexibility with multiple optional outputs, demonstrating the potential as a transparent energy supply in planar electronics.

Ultrathin paper-like boron-doped carbon nanosheet electrodes combined with boron-enriched gel polymer electrolytes for high-performance energy storage

2016 ◽  
Vol 4 (40) ◽  
pp. 15589-15596 ◽  
Author(s):  
Chuanlin Cai ◽  
Ping Yuan ◽  
Jiayong Tang ◽  
Yanhui Guo ◽  
Xiaohua Ma
Keyword(s):  
Energy Storage ◽  
Polymer Electrolytes ◽  
High Performance ◽  
Electrochemical Performances ◽  
Gel Polymer Electrolytes ◽  
The Novel ◽  
Boron Doped ◽  
Doped Graphene ◽  
Graphene Paper ◽  
Novel Design

The novel design of B-doped graphene paper electrodes combined with B-enriched gel polymer electrolytes endows symmetric SCs with outstanding electrochemical performances.

scholarly journals Boron-Doped Polygonal Carbon Nano-Onions: Synthesis and Applications in Electrochemical Energy Storage

2017 ◽  
Vol 23 (29) ◽  
pp. 7132-7141 ◽  
Author(s):  
Olena Mykhailiv ◽  
Krzysztof Brzezinski ◽  
Bogdan Sulikowski ◽  
Zbigniew Olejniczak ◽  
Malgorzata Gras ◽  
...  
Keyword(s):  
Energy Storage ◽  
Electrochemical Energy Storage ◽  
Boron Doped ◽  
Electrochemical Energy

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Progress and perspectives on halide lithium conductors for all-solid-state lithium batteries

2020 ◽  
Vol 13 (5) ◽  
pp. 1429-1461 ◽  
Author(s):  
Xiaona Li ◽  
Jianwen Liang ◽  
Xiaofei Yang ◽  
Keegan R. Adair ◽  
Changhong Wang ◽  
...  
Keyword(s):  
Energy Storage ◽  
Solid State ◽  
Lithium Batteries ◽  
Electrochemical Stability ◽  
Superionic Conductors ◽  
Fundamental Understanding ◽  
Potential Applications ◽  
Synthesis Routes

This review focuses on fundamental understanding, various synthesis routes, chemical/electrochemical stability of halide-based lithium superionic conductors, and their potential applications in energy storage as well as related challenges.

An aqueous hybrid electrolyte for low-temperature zinc-based energy storage devices

2020 ◽  
Vol 13 (10) ◽  
pp. 3527-3535 ◽  
Author(s):  
Nana Chang ◽  
Tianyu Li ◽  
Rui Li ◽  
Shengnan Wang ◽  
Yanbin Yin ◽  
...  
Keyword(s):  
Energy Storage ◽  
Low Temperature ◽  
Energy Storage Devices ◽  
Storage Devices

A frigostable aqueous hybrid electrolyte enabled by the solvation interaction of Zn2+–EG is proposed for low-temperature zinc-based energy storage devices.

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