scholarly journals Preliminary demonstration of a persistent Josephson phase-slip memory cell with topological protection

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Nadia Ligato ◽  
Elia Strambini ◽  
Federico Paolucci ◽  
Francesco Giazotto

AbstractSuperconducting computing promises enhanced computational power in both classical and quantum approaches. Yet, scalable and fast superconducting memories are not implemented. Here, we propose a fully superconducting memory cell based on the hysteretic phase-slip transition existing in long aluminum nanowire Josephson junctions. Embraced by a superconducting ring, the memory cell codifies the logic state in the direction of the circulating persistent current, as commonly defined in flux-based superconducting memories. But, unlike the latter, the hysteresis here is a consequence of the phase-slip occurring in the long weak link and associated to the topological transition of its superconducting gap. This disentangles our memory scheme from the large-inductance constraint, thus enabling its miniaturization. Moreover, the strong activation energy for phase-slip nucleation provides a robust topological protection against stochastic phase-slips and magnetic-flux noise. These properties make the Josephson phase-slip memory a promising solution for advanced superconducting classical logic architectures or flux qubits.

2021 ◽  
Author(s):  
Nadia Ligato ◽  
Elia Strambini ◽  
Federico Paolucci ◽  
Francesco Giazotto

Abstract Superconducting computing promises enhanced computational power in both classical and quantum approaches. Yet, efficient schemes for scalable and fast superconducting memories are still missing. On the one hand, the large inductance required in magnetic flux-controlled Josephson memories impedes device miniaturization and scalability. On the other hand, schemes based on the ferromagnetic order to store information often degrades superconductivity, and limits the operation speed to the magnetization switching rate of a few GHz. Here, we overcome these limitations with a fully superconducting memory cell based on the hysteretic phase-slip transition existing in long aluminum nanowire Josephson junctions. The memory logic state is codified in the topological index of the junction providing a robust protection against stocastic phase slips and magnetic flux noise. Our direct and non-destructive read-out schemes, based on local DC or AC tunneling spectroscopy, ensure reduced dissipation (≤ 40 fW) thereby yielding a very low energy per bit read-out power consumption as low as ~ 10-24 J as estimated from the typical time response of the structure (≤ 30 ps). The memory, measured over several days, showed no evidence of information degradation up to ~1.1 K, i.e., ~85% of the critical temperature of aluminum. The ease of operation combined with remarkable performance elects the Josephson phase-slip memory as an attractive storage cell to be exploited in advanced superconducting classical logic architectures or flux qubits.


1981 ◽  
Vol 61 (1) ◽  
pp. 112-122 ◽  
Author(s):  
A. Widom ◽  
G. Megaloudis ◽  
J. E. Sacco ◽  
T. D. Clark

1980 ◽  
Vol 39 (5-6) ◽  
pp. 477-496 ◽  
Author(s):  
V. I. Shnyrkov ◽  
V. A. Khlus ◽  
G. M. Tsoi

2005 ◽  
Vol 7 ◽  
pp. 219-219 ◽  
Author(s):  
J E Mooij ◽  
C J P M Harmans
Keyword(s):  

Electronics ◽  
2021 ◽  
Vol 10 (18) ◽  
pp. 2291
Author(s):  
Fabrizio Ottati ◽  
Giovanna Turvani ◽  
Guido Masera ◽  
Marco Vacca

The speed of modern digital systems is severely limited by memory latency (the “Memory Wall” problem). Data exchange between Logic and Memory is also responsible for a large part of the system energy consumption. Logic-in-Memory (LiM) represents an attractive solution to this problem. By performing part of the computations directly inside the memory the system speed can be improved while reducing its energy consumption. LiM solutions that offer the major boost in performance are based on the modification of the memory cell. However, what is the cost of such modifications? How do these impact the memory array performance? In this work, this question is addressed by analysing a LiM memory array implementing an algorithm for the maximum/minimum value computation. The memory array is designed at physical level using the FreePDK 45nm CMOS process, with three memory cell variants, and its performance is compared to SRAM and CAM memories. Results highlight that read and write operations performance is worsened but in-memory operations result to be very efficient: a 55.26% reduction in the energy-delay product is measured for the AND operation with respect to the SRAM read one. Therefore, the LiM approach represents a very promising solution for low-density and high-performance memories.


2003 ◽  
Vol 17 (10n12) ◽  
pp. 527-536
Author(s):  
B. J. Baelus ◽  
F. M. Peeters

Multiply connected mesoscopic superconductors are considered within the framework of the nonlinear Ginzburg–Landau theory. The two coupled nonlinear equations are solved numerically and we investigated the properties of a superconducting ring, two concentric rings, and an asymmetric ring. We find that (i) for a mesoscopic superconducting ring the flux through the hole is not quantized, (ii) two concentric mesoscopic superconducting rings are magnetically coupled and the interaction energy increases with increasing sample thickness, and (iii) in asymmetric rings, a stationary phase slip state is predicted.


1974 ◽  
Vol 24 (3) ◽  
pp. 149-151 ◽  
Author(s):  
F. J. Rachford ◽  
C. Y. Huang ◽  
S. Wolf ◽  
M. Nisenoff

2005 ◽  
Vol 2 (1) ◽  
pp. 23-26 ◽  
Author(s):  
E. Hoskinson ◽  
Y. Sato ◽  
I. Hahn ◽  
R. E. Packard

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