scholarly journals Ionitronic manipulation of current-induced domain wall motion in synthetic antiferromagnets

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yicheng Guan ◽  
Xilin Zhou ◽  
Fan Li ◽  
Tianping Ma ◽  
See-Hun Yang ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Domain Wall ◽  
Wall Motion ◽  
Domain Walls ◽  
Magnetic Moments ◽  
Magnetic Layer ◽  
Ferromagnetic Layer ◽  
Domain Wall Motion ◽  
Antiferromagnetic Coupling ◽  
Induced Motion

AbstractThe current induced motion of domain walls forms the basis of several advanced spintronic technologies. The most efficient domain wall motion is found in synthetic antiferromagnetic (SAF) structures that are composed of an upper and a lower ferromagnetic layer coupled antiferromagnetically via a thin ruthenium layer. The antiferromagnetic coupling gives rise to a giant exchange torque with which current moves domain walls at maximum velocities when the magnetic moments of the two layers are matched. Here we show that the velocity of domain walls in SAF nanowires can be reversibly tuned by several hundred m/s in a non-volatile manner by ionic liquid gating. Ionic liquid gating results in reversible changes in oxidation of the upper magnetic layer in the SAF over a wide gate-voltage window. This changes the delicate balance in the magnetic properties of the SAF and, thereby, results in large changes in the exchange coupling torque and the current-induced domain wall velocity. Furthermore, we demonstrate an example of an ionitronic-based spintronic switch as a component of a potential logic technology towards energy-efficient, all electrical, memory-in-logic.

scholarly journals Ionitronic manipulation of current-induced domain wall motion in synthetic antiferromagnets

2021 ◽  
Author(s):  
Yicheng Guan ◽  
Xilin Zhou ◽  
Fan Li ◽  
Tianping Ma ◽  
See-Hun Yang ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Domain Wall ◽  
Wall Motion ◽  
Domain Walls ◽  
Magnetic Moments ◽  
Magnetic Layer ◽  
Ferromagnetic Layer ◽  
Domain Wall Motion ◽  
Antiferromagnetic Coupling ◽  
Induced Motion

Abstract The current induced motion of domain walls forms the basis of several advanced spintronic technologies. The most efficient domain wall motion is found in synthetic antiferromagnetic (SAF) structures that are composed of an upper and a lower ferromagnetic layer coupled antiferromagnetically via a thin ruthenium layer. The antiferromagnetic coupling gives rise to a giant exchange torque with which current moves domain walls at maximum velocities when the magnetic moments of the two layers are matched. Here we show that the velocity of domain walls in SAF nanowires can be reversibly tuned by several hundred m/s in a non-volatile manner by ionic liquid gating. Ionic liquid gating results in reversible changes in oxidation of the upper magnetic layer in the SAF over a wide gate-voltage window. This changes the delicate balance in magnetic properties of the SAF and, thereby, results in large changes in the exchange coupling torque and the current-induced domain wall velocity. We also illustrate the potential of ionitronic spintronic logic devices with a ‘knot’ racetrack device.

Electrical Control of Magnetic Multi-Domain Transformation in a Specific Geometric-Patterned Ni Nanostructure on a Piezoelectric [Pb(Mg1/3Nb2/3)O3]0.68–[PbTiO3]0.32 Substrate

2016 ◽  
Author(s):  
Yu-Jen Chen ◽  
Tien-Kan Chung ◽  
Po-Jung Lin ◽  
Chiao-Fang Hung ◽  
Hou-Jen Chu ◽  
...  
Keyword(s):  
Domain Wall ◽  
Data Storage ◽  
Wall Motion ◽  
Domain Walls ◽  
Magnetoelectric Effect ◽  
Domain Wall Motion ◽  
Electrical Control ◽  
Domain State ◽  
Memory Applications ◽  
Domain Transformation

In this paper, we report an electrical control of magnetic multi-domain-walls transformation in an N-shape-patterned Ni nanostructures on a piezoelectric [Pb(Mg1/3Nb2/3)O3]0.68–[PbTiO3]0.32 substrate. Based on the converse-magnetoelectric-effect induced domain-wall transformation and the specific N-shape geometry guided domain-wall motion, the domain walls are successfully transformed by an applied electric field of 0.8 MV/m from the transverse domain wall state into the flux closure vortex domain state. These experimental results achieve the electrical control of multi-domain-walls transformation and would create more data storage and memory applications in the future.

Magnetic dipole interactions in dysprosium ethyl sulphate III. Magnetic and thermal properties below the Curie point

1968 ◽  
Vol 306 (1486) ◽  
pp. 335-353 ◽  
Keyword(s):  
Domain Wall ◽  
Magnetic Dipole ◽  
Wall Motion ◽  
Domain Walls ◽  
Domain Wall Motion ◽  
Single Spin ◽  
Relaxation Effects ◽  
Dipole Interactions ◽  
Spin Interactions ◽  
Spin Reversal

The thermal and magnetic properties of dysprosium ethyl sulphate have been measured at temperatures below its Curie temperature of 0⋅13 °K. The ferromagnetism is shown to be due almost entirely to magnetic dipole interactions which are highly anisotropic corresponding to a zero magnetic g -value perpendicular to the c -axis. The system thus approximates closely to a ferromagnetic Ising model. Because of demagnetizing effects the low field proper­ties are dominated by the formation of domains, which are shown to be long and thin with unusually abrupt domain walls. Measurements of the initial susceptibility at frequencies between 25 and 900 c/s show marked relaxation effects which are interpreted in terms of both domain wall motion and single spin reversals. A discussion is given of the general problem of finding the real and imaginary susceptibility components in systems with strong dipolar interactions. In favourable cases, such as dysprosium ethyl sulphate, it is possible to find a shape-independent quasi-static susceptibility which corresponds to the response of the system in the absence of domain wall motion and demagnetizing effects. Values for the spin-reversal relaxation time are found to be of the order of tens of microseconds which is surprisingly short in view of the absence of non-diagonal terms in the spin-spin interactions.

scholarly journals Current-Driven Domain Wall Motion in Curved Ferrimagnetic Strips Above and Below the Angular Momentum Compensation

2021 ◽  
Vol 9 ◽  
Author(s):  
D. Osuna Ruiz ◽  
O. Alejos ◽  
V. Raposo ◽  
E. Martínez
Keyword(s):  
Angular Momentum ◽  
Domain Wall ◽  
High Speed ◽  
Wall Motion ◽  
Domain Walls ◽  
Relaxation Times ◽  
Domain Wall Motion ◽  
Current Density Distribution ◽  
Terminal Velocity ◽  
Artificial System

Current driven domain wall motion in curved Heavy Metal/Ferrimagnetic/Oxide multilayer strips is investigated using systematic micromagnetic simulations which account for spin-orbit coupling phenomena. Domain wall velocity and characteristic relaxation times are studied as functions of the geometry, curvature and width of the strip, at and out of the angular momentum compensation. Results show that domain walls can propagate faster and without a significant distortion in such strips in contrast to their ferromagnetic counterparts. Using an artificial system based on a straight strip with an equivalent current density distribution, we can discern its influence on the wall terminal velocity, as part of a more general geometrical influence due to the curved shape. Curved and narrow ferrimagnetic strips are promising candidates for designing high speed and fast response spintronic circuitry based on current-driven domain wall motion.

The Influence of the Magnetic Field on Electrically Induced Domain Wall Motion

2015 ◽  
Vol 233-234 ◽  
pp. 443-446 ◽  
Author(s):  
D.A. Sechin ◽  
E.P. Nikolaeva ◽  
A.P. Pyatakov ◽  
A.B. Nikolaev ◽  
T.B. Kosykh
Keyword(s):  
Magnetic Field ◽  
Domain Wall ◽  
Electric Field ◽  
Wall Motion ◽  
Domain Walls ◽  
Domain Wall Motion ◽  
Electric Polarization ◽  
Measured Velocity ◽  
Iron Garnet ◽  
The Magnetic Field

Domain walls in iron garnet films demonstrate magnetoelectric properties that manifest themselves as a displacement induced by inhomogeneous electric field. In this paper the results of the study of electric field induced domain wall dynamics and its dependence on external magnetic field are presented. The measured velocity of the electrically induced domain wall motion increased by an order with the magnetic field applied perpendicular to the domain wall plane. The numerical simulation shows that the observed behaviour of the domain wall can be explained by magnetic field induced modification of its internal micromagnetic structure and enhancement of the electric polarization associated with the wall.

scholarly journals Monte Carlo Simulation of Magnetization Reversal Via Domain-Wall Motion in Fe Sesquilayers on W(110)

1997 ◽  
Vol 492 ◽  
Author(s):  
M. Kolesik ◽  
M. A. Novotny ◽  
Per Arne Rikvold
Keyword(s):  
Monte Carlo Simulation ◽  
Domain Wall ◽  
Ultrathin Films ◽  
Wall Motion ◽  
Domain Walls ◽  
Domain Wall Motion ◽  
Atomic Layer ◽  
Thermally Activated ◽  
Insight Into

ABSTRACTIron sesquilayers are ultrathin films with coverages between one and two atomic mono-layers. They consist of an almost defect-free monolayer with compact islands of a second atomic layer on top. This variation of the film thickness results in a strong interaction between domain walls and the island structure. It makes these systems an ideal laboratory to study the dynamics of domain walls driven by weak external fields. We present computer simulations which provide insight into the role of the thermally activated nucleation processes by which a driven domain wall overcomes the obstacles created by the islands.

scholarly journals The Dynamics of Domain Wall Motion in Spintronics

2020 ◽  
Vol 6 (3) ◽  
pp. 40
Author(s):  
Diego Bisero
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
External Magnetic Field ◽  
Domain Wall ◽  
Effective Mass ◽  
General Equation ◽  
Wall Motion ◽  
Domain Walls ◽  
Domain Wall Motion ◽  
Magnetic Thin Film

A general equation describing the motion of domain walls in a magnetic thin film in the presence of an external magnetic field has been reported in this paper. The equation includes all the contributions from the effects of domain wall inertia, damping and stiffness. The effective mass of the domain wall, the effects of both the interaction of the DW with the imperfections in the material and damping have been calculated.

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