scholarly journals Persistent and partially mobile oxygen vacancies in Li-rich layered oxides

Author(s):  
Peter M. Csernica ◽  
Samanbir S. Kalirai ◽  
William E. Gent ◽  
Kipil Lim ◽  
Young-Sang Yu ◽  
...  
1994 ◽  
Vol 346 ◽  
Author(s):  
M.R. Palacín ◽  
A. Fuertes ◽  
N. Casañ-Pastor ◽  
P. Gómez-Romero

ABSTRACTThe synteses and structure of the three-dimensional perovskite LajCuTiOg are described. In this oxide Cu and Ti atoms are disordered among octahedral sites. The introduction of oxygen vacancies by an adequate cation substitution leads to the induction of bidimensionality as well as an ordered arrangement of cations and oxygen vacancies as found in the layered oxides Ln2Ba2Cu2Ti2O11 (Ln=La,Nd,Eu).


2010 ◽  
Vol 96 (25) ◽  
pp. 251901 ◽  
Author(s):  
Yongsam Kim ◽  
Ankit S. Disa ◽  
Timur E. Babakol ◽  
Joel D. Brock

2014 ◽  
Vol 16 (28) ◽  
pp. 14665-14668 ◽  
Author(s):  
Danna Qian ◽  
Bo Xu ◽  
Miaofang Chi ◽  
Ying Shirley Meng

Materials ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 5596
Author(s):  
Marina Tyunina

The excellent electro-mechanical properties of perovskite oxide ferroelectrics make these materials major piezoelectrics. Oxygen vacancies are believed to easily form, migrate, and strongly affect ferroelectric behavior and, consequently, the piezoelectric performance of these materials and devices based thereon. Mobile oxygen vacancies were proposed to explain high-temperature chemical reactions half a century ago. Today the chemistry-enabled concept of mobile oxygen vacancies has been extrapolated to arbitrary physical conditions and numerous effects and is widely accepted. Here, this popular concept is questioned. The concept is shown to conflict with our modern physical understanding of ferroelectrics. Basic electronic processes known from mature semiconductor physics are demonstrated to explain the key observations that are groundlessly ascribed to mobile oxygen vacancies. The concept of mobile oxygen vacancies is concluded to be misleading.


2020 ◽  
Vol 13 (06) ◽  
pp. 2051034
Author(s):  
Bartłomiej Gȩdziorowski ◽  
Anna Niemczyk ◽  
Anna Olszewska ◽  
Kacper Cichy ◽  
Konrad Świerczek

Nd2CuO[Formula: see text] is known to possess either oxygen vacancies or interstitial oxygen defects, depending on the synthesis route, as well as may exhibit the A-site deficiency. In this work, insight into physicochemical properties of Nd2CuO[Formula: see text] and Nd[Formula: see text]CuO[Formula: see text] layered oxides is given, focusing on the crystal structure, electrical conductivity, and oxygen permeation, as well as on numerical density functional theory (DFT) simulations concerning ionic defects formation and their possible movement in the crystal structure. The results indicate that in oxidizing conditions at low temperatures, interstitial oxygen defects are stable, but with the increase of temperature, the release of oxygen is observed, leading to formation of the oxygen vacancies. Both materials are stable at elevated temperatures in air and Ar. Larger oxygen nonstoichiometry and improved electrical conductivity at high temperatures for Nd[Formula: see text]CuO[Formula: see text] compound are accompanied by the recorded oxygen flux of ca. 0.2[Formula: see text]mL[Formula: see text]cm[Formula: see text][Formula: see text]min[Formula: see text] at 880∘C for 0.8[Formula: see text]mm thick ceramic membrane.


2015 ◽  
Vol 3 (20) ◽  
pp. 11048-11056 ◽  
Author(s):  
Yifei Sun ◽  
Jianhui Li ◽  
Yimin Zeng ◽  
Babak Shalchi Amirkhiz ◽  
Mengni Wang ◽  
...  

Introduction of A-site deficiency on Ni-doped LaSrCrO3 anodes helps form highly mobile oxygen vacancies and remarkably enhances Ni nanoparticle reducibility, and significantly increases electronic conductivity and catalytic activity.


2019 ◽  
Vol 21 (43) ◽  
pp. 24017-24025 ◽  
Author(s):  
Jianyin Wang ◽  
Mengchu Yang ◽  
Chong Zhao ◽  
Bei Hu ◽  
Xiaobing Lou ◽  
...  

The migration of transition-metal ions and oxygen vacancies in the Li1.2Mn0.6Ni0.2O2 cathode is mitigated after K+ bulk doping.


2016 ◽  
Vol 8 (50) ◽  
pp. 34590-34597 ◽  
Author(s):  
Chen Ge ◽  
Kui-juan Jin ◽  
Qing-hua Zhang ◽  
Jian-yu Du ◽  
Lin Gu ◽  
...  

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