scholarly journals Charge transport mechanism in the forming-free memristor based on silicon nitride

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Andrei A. Gismatulin ◽  
Gennadiy N. Kamaev ◽  
Vladimir N. Kruchinin ◽  
Vladimir A. Gritsenko ◽  
Oleg M. Orlov ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Charge Transport ◽  
High Resistance ◽  
High Speed ◽  
Current Model ◽  
Chemical Vapor Deposition Method ◽  
Initial State ◽  
Resistance State ◽  
Trap Ionization ◽  
Assisted Tunneling

AbstractNonstoichiometric silicon nitride SiNx is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present work, a silicon nitride-based memristor deposited by the plasma-enhanced chemical vapor deposition method was studied. To develop a memristor based on silicon nitride, it is necessary to understand the charge transport mechanisms in all states. In the present work, it was established that the charge transport in high-resistance states is not described by the Frenkel effect model of Coulomb isolated trap ionization, Hill–Adachi model of overlapping Coulomb potentials, Makram–Ebeid and Lannoo model of multiphonon isolated trap ionization, Nasyrov–Gritsenko model of phonon-assisted tunneling between traps, Shklovskii–Efros percolation model, Schottky model and the thermally assisted tunneling mechanisms. It is established that, in the initial state, low-resistance state, intermediate-resistance state and high-resistance state, the charge transport in the forming-free SiNx-based memristor is described by the space charge limited current model. The trap parameters responsible for the charge transport in various memristor states are determined.

Two-bands charge transport in silicon nitride due to phonon-assisted trap ionization

2004 ◽  
Vol 96 (8) ◽  
pp. 4293-4296 ◽  
Author(s):  
K. A. Nasyrov ◽  
V. A. Gritsenko ◽  
Yu. N. Novikov ◽  
E.-H. Lee ◽  
S. Y. Yoon ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Charge Transport ◽  
Trap Ionization

The charge transport mechanism in silicon nitride: Multi-phonon trap ionization

2009 ◽  
Vol 53 (3) ◽  
pp. 251-255 ◽  
Author(s):  
A.V. Vishnyakov ◽  
Yu.N. Novikov ◽  
V.A. Gritsenko ◽  
K.A. Nasyrov
Keyword(s):  
Silicon Nitride ◽  
Charge Transport ◽  
Transport Mechanism ◽  
Charge Transport Mechanism ◽  
Trap Ionization

Wear resistance and cutting performance of high-speed steel ball nose end mills related to the initial state of tool surface

Wear ◽  
2021 ◽  
Vol 472-473 ◽  
pp. 203711
Author(s):  
A.S. Chaus ◽  
M.V. Sitkevich ◽  
P. Pokorný ◽  
M. Sahul ◽  
M. Haršáni ◽  
...  
Keyword(s):  
Wear Resistance ◽  
High Speed ◽  
High Speed Steel ◽  
Steel Ball ◽  
Cutting Performance ◽  
Initial State ◽  
Tool Surface ◽  
End Mills

Charge transport and photon-assisted tunneling in the NSN single-electron transistor

1994 ◽  
Vol 203 (3-4) ◽  
pp. 327-339 ◽  
Author(s):  
J.M. Hergenrother ◽  
M.T. Tuominen ◽  
J.G. Lu ◽  
D.C. Ralph ◽  
M. Tinkham
Keyword(s):  
Charge Transport ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Assisted Tunneling

Abstract 371: Down Regulation of ECM Genes Laminin and Collagen IV Lead to Preserved Cardiac Function With Age and Increased Lifespan in Drosophila

2015 ◽  
Vol 117 (suppl_1) ◽  
Author(s):  
Ayla O Sessions
Keyword(s):  
Diastolic Dysfunction ◽  
High Speed ◽  
Current Model ◽  
Collagen Iv ◽  
Model Systems ◽  
Model Organisms ◽  
Heart Tube ◽  
Ecm Remodeling ◽  
Intercalated Discs ◽  
And Performance

Increased deposition of extracellular matrix (ECM) is observed in all advanced age heart failure patients, but current model systems are complex and slow to age. To investigate the effect of extracellular remodeling on mechanical function in genetically tractable, rapidly aging, and simple model organisms, we employed Drosophila melanogaster, which has a simple trilayered heart tube. We found that two common wildtype strains of Drosophila, i.e. yellow-white (yw) and white-1118 (w1118), exhibit different cytoskeletal and ECM remodeling with age. Using a recently developed nanoindentation method to measure cardiomyocyte stiffness and high speed optical imaging to assess contractility of intact Drosophila hearts, we found that yw flies had stiffer intercalated discs (ICD) and exhibited diastolic dysfunction with age. On the other hand, w1118 flies had a shorter lifespan compared to yw, did not exhibit ICD stiffening, had a less severe diastolic dysfunction, and showed an increase in ECM layer thickness between ventral muscle (VM) and cardiomyocyte (CM) layers of the heart tube. To modulate ECM and assess its effect in the aged w1118 flies, we knocked-down ECM genes LamininA and Viking (homologous to Collagen IV). Both ECM KD genotypes exhibited diastolic dilation with increased fractional shortening at adult (1wk) and aged (5wk) time points. The LamininA KD resulted in decreased cardiomyocyte stiffness correlating with increased relaxation velocities in adult flies and preservation of shortening and relaxation velocities in aged flies over controls. However, both the LamininA and Collagen IV KD flies experienced a basal increase in the decoupling of their cardiomyocytes as determined by heart period variance and % fibrillar heart-beats. These conductance issues were not enough to counteract the increased cardiac output and performance with age, and the Collagen IV KD outlived controls by 1.5 weeks median survival and the LamininA KD by 3 weeks. This suggests that the cell-ECM contacts in the basement membrane are intimately tied not only to the coupling of the cardiomyocytes of the Drosophila heart tube but also to cytoskeletal remodeling, but perhaps different ECM proteins have different mechanisms for interacting with the cardiomyocyte cytoskeleton.

Enhanced Resistance Switching of Ga2O3 Thin Films by Ultraviolet Radiation

2020 ◽  
Vol 20 (5) ◽  
pp. 3283-3286 ◽  
Author(s):  
Yuehua An ◽  
Xia Shen ◽  
Yuying Hao ◽  
Pengfei Guo ◽  
Weihua Tang
Keyword(s):  
Ultraviolet Radiation ◽  
High Resistance ◽  
High Resistance State ◽  
High Ratio ◽  
Resistance Switching ◽  
Resistive State ◽  
Oxide Systems ◽  
Low Resistance ◽  
Resistance State

Conductive filament mechanism can explain major resistance switching behaviors. The forming/deforming of the filaments define the high/low resistance states. The ratio of high/low resistance depends on the characterization of the filaments. In many oxide systems, the oxygen vacancies are important to forming the conductive filaments for the resistance switching behaviors. As ultrawide band gap semiconductor, Ga2O3 has very high resistance for its high resistance state, while its low resistive state has relative high resistance, which normally results in low ratio of high/low resistance. In this letter, we report a high ratio of high/low resistance by ultraviolet radiation. The I–V characteristics of Au/Ti/β-Ga2O3/W sandwich structure device shows that the HRS to LRS ratio of 5 orders is achieved.

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