Effects of nitrogen flow on R.F. reactive magnetron sputtered silicon nitride films on high speed steel

2004 ◽  
Vol 176 (3) ◽  
pp. 290-295 ◽  
Author(s):  
Bao-Shun Yau ◽  
Jow-Lay Huang
1990 ◽  
Vol 190 (2) ◽  
pp. 265-277 ◽  
Author(s):  
M.Y. Al-Jaroudi ◽  
H.T.G. Hentzell ◽  
S.E. Hörnström ◽  
A. Bengtson

1992 ◽  
Vol 284 ◽  
Author(s):  
Chi-Hsien Lin ◽  
J. B. Wachtman ◽  
G. H. Sigel ◽  
R. L. Pfeffer ◽  
T. P. Monahan ◽  
...  

ABSTRACTABSTRACT: Silicon nitride films (a-SixN1−x:H) have been prepared by rf reactive magnetron sputtering from a silicon target in a mixture gas of Ar, N2, and H2. The effects of the presence of hydrogen gas have been related to the refractive index, deposition rate, etch rate, and the Si-H and N-H bonding in the films. Hydrogen contents were measured by a quadrupole secondary ion mass spectrometer (SIMS) using deuterium implanted samples as reference standards. The deuterium implanted samples were annealed at 900°C for various periods of time to study the diffusion behavior of deuterium and hydrogen in a Si-rich and a nearly stoichiometric silicon nitride film.


2001 ◽  
Vol 16 (1) ◽  
pp. 308-313 ◽  
Author(s):  
Wentao Xu ◽  
Boquan Li ◽  
Toshiyuki Fujimoto ◽  
Isao Kojima

The structure and composition of SiNx/Si/SiNx films were investigated by means of x-ray reflectivity, x-ray photoelectron spectroscopy, and atomic force microscopy. The three-layer films were prepared by radio-frequency magnetron sputtering under the condition of constant nitrogen flow and the argon flow. It was found that the deposition rate and surface structure of the silicon nitride films were mainly determined by the nitrogen flow rather than the argon flow. But the composition of the silicon nitride films was controlled by the gas flow ratio (FAr/FN2) used during sputtering.


2014 ◽  
Vol 875-877 ◽  
pp. 218-222
Author(s):  
Mei Dong Huang ◽  
Li Xue ◽  
Fan Yu Meng ◽  
Hong Yu Li ◽  
Xi Ying Fan

Ti,Cr)N films were fabricated on the well-polished high-speed-steel substrate under various deposition conditions by arc ion plating. X-ray diffraction was employed to characterize the phase and microstructure of the films, and the preferred orientation of the crystalline plane was discussed in terms of negative bias and nitrogen flow, respectively. The morphology of the films was investigated using scanning electron microscopy. The size and density of macro-particles were compared for different bias and nitrogen flow. The mechanical properties of the films were investigated. The hardness and elastic module were tested by the XP nanoindenter. The results show that the size as well as the number of the macro-particles decreases with increasing negative bias, presenting a smoother surface. The films have preferred (111) plane at low biases but (200) plane at high ones. The hardness and elastic modulus of (Ti,Cr)N films increases with increasing negative bias. Larger hardness can be achieved by increasing nitrogen flow. It is found that the mechanical properties, such as hardness and elastic module of (Ti, Cr)N films are better than those of TiN films, according to the comparison of the experimental results. It indicates that the mechanical properties of TiN can be enhanced by doping Cr. The mechanism is also discussed and analysed by taking deposition parameters into account.


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