scholarly journals On the feasibility of hearing electrons in a 1D device through emitted phonons

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Amit Verma ◽  
Reza Nekovei ◽  
Zahed Kauser
Keyword(s):  
Electronic Band Structure ◽  
Tight Binding ◽  
Radial Breathing Mode ◽  
Acoustic Phonons ◽  
Phonon Modes ◽  
Electronic Band ◽  
Ensemble Monte Carlo ◽  
Sensitivity Range ◽  
Effect Transistor ◽  
Active Channel

AbstractThis work investigates the vibrational power that may potentially be delivered by electron-emitted phonons at the terminals of a device with a 1D material as the active channel. Electrons in a 1D material traversing a device excite phase-limited acoustic and optical phonon modes as they undergo streaming motion. At ultra-low temperature (4 K in this study, for example), in the near absence of background phonon activity, the emitted traveling phonons may potentially be collected at the terminals before they decay. Detecting those phonons is akin to hearing electrons within the device. Results here show that traveling acoustic phonons can deliver up to a fraction of a nW of vibrational power at the terminals, which is within the sensitivity range of modern instruments. The total vibrational power from traveling optical and acoustic phonons is found to be in order of nW. In this work, Ensemble Monte Carlo (EMC) simulations are used to model the behavior of a gate-all-around (GAA) field-effect transistor (FET), with a single-wall semiconducting carbon nanotube (SWCNT) as the active channel, and a free-hanging SWCNT between two contacts. Electronic band structure of the SWCNT is calculated within the framework of a tight-binding (TB) model. The principal scattering mechanisms are due to electron–phonon interactions using 1st order perturbation theory. A continuum model is used to determine the longitudinal acoustic (LA) and optical (LO) phonons, and a single lowest radial breathing mode (RBM) phonon is considered.

Electronic band structure of silver low-index surfaces: a tight-binding study

2020 ◽  
Vol 98 (5) ◽  
pp. 488-496
Author(s):  
H.J. Herrera-Suárez ◽  
A. Rubio-Ponce ◽  
D. Olguín
Keyword(s):  
Band Structure ◽  
Density Of States ◽  
Electronic Band Structure ◽  
Local Density ◽  
Tight Binding ◽  
Theoretical Data ◽  
Binding Study ◽  
Local Density Of States ◽  
Electronic Band ◽  
Tight Binding Method

We studied the electronic band structure and corresponding local density of states of low-index fcc Ag surfaces (100), (110), and (111) by using the empirical tight-binding method in the framework of the Surface Green’s Function Matching formalism. The energy values for different surface and resonance states are reported and a comparison with the available experimental and theoretical data is also done.

Electronic and Optical Properties of HgI2

1993 ◽  
Vol 302 ◽  
Author(s):  
Yia-Chung Chang ◽  
Hock-Kee Sim ◽  
R. B. James
Keyword(s):  
Electronic Structures ◽  
Electronic Band Structure ◽  
Scattering Data ◽  
Matrix Elements ◽  
Interband Transitions ◽  
Phonon Modes ◽  
Electronic Band ◽  
Optical Responses ◽  
Tetragonal Form ◽  
Excitonic Effects

ABSTRACTWe present theoretical studies of electronic structures, optical responses, and phonon modes of undoped HgI2 in its red tetragonal form. The electronic band structure is studied via an empirical nonlocal pseudopotential model, including the spin-orbit interaction. The electron and hole effective masses, optical matrix elements for interband transitions, and complex dielectric function are computed. Excitonic effects on the absorption coefficient near the fundamental band gap are included within the effectivemass approximation. The resulting absorption spectra and their polarization dependence are compared with experiment with favorable agreement. The phonon modes of HgI2 are studied with a microscopic model and a good fit to the neutron scattering data is obtained.

ADSORPTION OF HYDROGEN AND OXYGEN ON SINGLE AND DOUBLE LAYER STEPPED SI(100) SURFACES

2001 ◽  
Vol 15 (16) ◽  
pp. 2261-2274
Author(s):  
SAED A. SALMAN ◽  
ŞENAY KATIRCIOĞLU ◽  
ŞAKIR ERKOÇ
Keyword(s):  
Band Structure ◽  
Double Layer ◽  
Electronic Band Structure ◽  
Tight Binding ◽  
Electronic Band ◽  
Adsorption Sites ◽  
Initial Stage ◽  
Adsorption Of Hydrogen ◽  
Oxygen Atoms

We have investigated the electronic band structure of hydrogen and oxygen adsorbed single and double layer stepped Si(100) surfaces by Empirical Tight Binding (ETB) method. The total electronic energies of the H,O-SA, DA, DB type stepped Si(100) systems are calculated with limited number of hydrogen and oxygen atoms separately to find out the most probable adsorption sites of the adatoms in the initial stage of hydrogenation and oxidation.

Effect of boron impurity in a carbon nanotube superlattice

2017 ◽  
Vol 31 (14) ◽  
pp. 1750106
Author(s):  
Zahra Karimi Ghobadi ◽  
Aliasghar Shokri ◽  
Sonia Zarei
Keyword(s):  
Carbon Nanotube ◽  
Band Structure ◽  
Boron Atom ◽  
Density Of States ◽  
Nearest Neighbor ◽  
Electronic Band Structure ◽  
Tight Binding ◽  
Topological Defects ◽  
Electronic Band ◽  
Neighbor Approximation

In this work, the influence of boron atom impurity is investigated on the electronic properties of a single-wall carbon nanotube superlattice which is connected by pentagon–heptagon topological defects along the circumference of the heterojunction of these superlattices. Our calculation is based on tight-binding [Formula: see text]-electron method in nearest-neighbor approximation. The density of states (DOS) and electronic band structure in presence of boron impurity has been calculated. Results show that when boron atom impurity and nanotube atomic layers have increased, electronic band structure and the DOS have significant changes around the Fermi level.

Tight-binding calculation of giant magnetoresistance in Co/Cu/Co spin valves with layer-dependent scattering

1997 ◽  
Vol 475 ◽  
Author(s):  
E.Yu. Tsymbal ◽  
D.G. Pettifor
Keyword(s):  
Giant Magnetoresistance ◽  
Electronic Band Structure ◽  
Outer Boundary ◽  
Energy Levels ◽  
Tight Binding ◽  
Spin Valve ◽  
Mean Free Path ◽  
Electronic Band ◽  
Tight Binding Approximation ◽  
Atomic Energy Levels

ABSTRACTWe have modelled the effects of bulk, outer-boundary, and interfacial disorder on conductivity and giant magnetoresistance (GMR) in Co101010/ trilayer taking into account its realistic electronic band structure. Calculations were performed using our model [E. Yu. Tsymbal and D.G. Pettifor, Phys. Rev. B 54 (1996) 15314] extended to the systems with two-dimensional periodicity and layer-dependent disorder. The model is based on the Kubo-Greenwood formula and spin-independent disorder in the on-site atomic energy levels, reflecting the scattering by defects, within an spd tight-binding approximation. Exploring the contributions to conductivity from different layers, we find that the influence on GMR of the boundary and interfacial scattering is similar to the bulk scattering, because the conductivity is non-local and the thicknesses of films are comparable to the electronic mean free path. Increasing the spin-independent disorder causes a decrease of GMR in the spin-valve for both interfacial, outer-boundary and bulk mechanisms of scattering. We have also investigated the effect of outer-boundary and interfacial paramagnetic Co layers on GMR in the trilayer. We find that the GMR, in this case, is strongly reduced due to the strong spin-independent scattering at the paramagnetic layers and hybridization of d states of the paramagnetic layers with the sp bands.

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