scholarly journals Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Yun-Da Hsieh ◽  
Jun-Han Lin ◽  
Richard Soref ◽  
Greg Sun ◽  
Hung-Hsiang Cheng ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Wide Spectrum ◽  
Photonic Integrated Circuits ◽  
Oxide Semiconductor ◽  
Optical Modulation ◽  
Bandgap Energy ◽  
Infrared Range ◽  
Optical Modulators ◽  
Mid Infrared ◽  
Wide Range

AbstractSilicon-based electronic-photonic integrated circuits, which are compatible with state-of-the-art complementary metal-oxide-semiconductor processes, offer promising opportunities for on-chip mid-infrared photonic systems. However, the lack of efficient mid-infrared optical modulators on silicon hinders the utilization of such systems. Here, we demonstrate the Franz-Keldysh effect in GeSn alloys and achieve mid-infrared electro-absorption optical modulation using GeSn heterostructures on silicon. Our experimental and theoretical results verify that the direct bandgap energy of GeSn can be widely tuned by varying the Sn content, thereby realizing wavelength-tunable optical modulation in the mid-infrared range with a figure-of-merit greater than 1.5 and a broadband operating range greater than 140 nm. In contrast to conventional silicon-photonic modulators based on the plasma dispersion effect, our GeSn heterostructure demonstrates practical and effective Franz-Keldysh mid-infrared optical modulation on silicon, helping to unlock the potential of electronic-photonic integrated circuits in a wide range of applications.

scholarly journals Electro-Absorption Modulation in GeSn Alloys for Wide-Spectrum Mid-Infrared Applications

2021 ◽  
Author(s):  
Yun-Da Hsieh ◽  
Jun-Han Lin ◽  
Richard Soref ◽  
Greg Sun ◽  
Hung-Hsiang Cheng ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Wide Spectrum ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Optical Modulation ◽  
Bandgap Energy ◽  
Optical Modulators ◽  
Mid Infrared ◽  
Wide Range ◽  
On Chip

Abstract Si-based electronic-photonic integrated circuits (EPICs), which are compatible with state-of-the-art complementary metal-oxide-semiconductor (CMOS) processes, offer promising opportunities for on-chip mid-infrared (MIR) photonic systems. However, the lack of efficient MIR optical modulators on Si hinders the utilization of MIR EPICs. Here, we clearly demonstrate the Franz-Keldysh (FK) effect in GeSn alloys and achieve on-Si MIR electro-absorption optical modulation using GeSn heterostructures. Our experimental and theoretical results verify that the direct bandgap energy of GeSn can be widely tuned by varying the Sn content, thereby realizing wavelength-tunable optical modulation in the MIR range with a figure-of-merit of Δα /α0 (FOM) greater than 1.5 and a broadband operating range greater than 140 nm. In contrast to conventional silicon-photonic modulators based on the plasma dispersion effect, our GeSn heterostructure demonstrates practical and effective FK MIR optical modulation on Si and helps unlock the potential of MIR EPICs for a wide range of applications.

scholarly journals Graphene-Based Biosensors for Detection of Composite Vibrational Fingerprints in the Mid-Infrared Region

Nanomaterials ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 1496
Author(s):  
Yijun Cai ◽  
Yanfen Hang ◽  
Yuanguo Zhou ◽  
Jinfeng Zhu ◽  
Jingwen Yang ◽  
...  
Keyword(s):  
Limit Of Detection ◽  
Graphene Nanoribbons ◽  
Infrared Region ◽  
Infrared Range ◽  
Label Free ◽  
Mid Infrared ◽  
Performance Limit ◽  
Wide Range ◽  
Vibrational Signals ◽  
Physical Insight

In this study, a label-free multi-resonant graphene-based biosensor with periodic graphene nanoribbons is proposed for detection of composite vibrational fingerprints in the mid-infrared range. The multiple vibrational signals of biomolecules are simultaneously enhanced and detected by different resonances in the transmission spectrum. Each of the transmission dips can be independently tuned by altering the gating voltage applied on the corresponding graphene nanoribbon. Geometric parameters are investigated and optimized to obtain excellent sensing performance. Limit of detection is also evaluated in an approximation way. Besides, the biosensor can operate in a wide range of incident angles. Electric field intensity distributions are depicted to reveal the physical insight. Moreover, another biosensor based on periodic graphene nanodisks is further proposed, whose performance is insensitive to the polarization of incidence. Our research may have a potential for designing graphene-based biosensor used in many promising bioanalytical and pharmaceutical applications.

scholarly journals Polarimetry for Photonic Integrated Circuits

2019 ◽  
Vol 9 (15) ◽  
pp. 2987
Author(s):  
Moritz Baier ◽  
Axel Schoenau ◽  
Francisco M. Soares ◽  
Martin Schell
Keyword(s):  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
The State ◽  
Polarization Dependence ◽  
Complete Picture ◽  
Wide Range ◽  
State Of Polarization ◽  
Matrix Yielding ◽  
Polarization Of Light

Photonic integrated circuits (PICs) play a key role in a wide range of applications. Very often, the performance of PICs depends strongly on the state of polarization of light. Classically, this is regarded as undesirable, but more and more applications emerge that make explicit use of polarization dependence. In either case, the characterization of the polarization properties of a PIC can be a nontrivial task. We present a way of characterizing PICs in terms of their full Müller matrix, yielding a complete picture of their polarization properties. The approach is demonstrated by carrying out measurements of fabricated PICs.

scholarly journals Silicon-based heterogeneous photonic integrated circuits for the mid-infrared

2013 ◽  
Vol 3 (9) ◽  
pp. 1523 ◽  
Author(s):  
Gunther Roelkens ◽  
Utsav Dave ◽  
Alban Gassenq ◽  
Nannicha Hattasan ◽  
Chen Hu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Mid Infrared ◽  
Silicon Based

scholarly journals High-speed programmable photonic circuits in a cryogenically compatible, visible–near-infrared 200 mm CMOS architecture

2021 ◽  
Author(s):  
Mark Dong ◽  
Genevieve Clark ◽  
Andrew J. Leenheer ◽  
Matthew Zimmermann ◽  
Daniel Dominguez ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Power Consumption ◽  
High Speed ◽  
Large Scale ◽  
Near Infrared ◽  
Response Times ◽  
Photonic Integrated Circuits ◽  
Complementary Metal Oxide Semiconductor ◽  
Phase Shifters ◽  
Oxide Semiconductor

AbstractRecent advances in photonic integrated circuits have enabled a new generation of programmable Mach–Zehnder meshes (MZMs) realized by using cascaded Mach–Zehnder interferometers capable of universal linear-optical transformations on N input/output optical modes. MZMs serve critical functions in photonic quantum information processing, quantum-enhanced sensor networks, machine learning and other applications. However, MZM implementations reported to date rely on thermo-optic phase shifters, which limit applications due to slow response times and high power consumption. Here we introduce a large-scale MZM platform made in a 200 mm complementary metal–oxide–semiconductor foundry, which uses aluminium nitride piezo-optomechanical actuators coupled to silicon nitride waveguides, enabling low-loss propagation with phase modulation at greater than 100 MHz in the visible–near-infrared wavelengths. Moreover, the vanishingly low hold-power consumption of the piezo-actuators enables these photonic integrated circuits to operate at cryogenic temperatures, paving the way for a fully integrated device architecture for a range of quantum applications.

scholarly journals Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applications

2011 ◽  
Author(s):  
N. Hattasan ◽  
L. Cerutti ◽  
J. B. Rodriguez ◽  
E. Tournié ◽  
D. Van Thourhout ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Mid Infrared
Sign in / Sign up

Export Citation Format

Share Document