scholarly journals Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Yongqing Cai ◽  
Gang Zhang ◽  
Yong-Wei Zhang
Keyword(s):  
2008 ◽  
Vol 77 (24) ◽  
Author(s):  
Jian-guo Wang ◽  
Emil Prodan ◽  
Roberto Car ◽  
Annabella Selloni

2019 ◽  
Vol 484 ◽  
pp. 990-998 ◽  
Author(s):  
Grant Drewelow ◽  
Austin Reed ◽  
Chandon Stone ◽  
Kwangdong Roh ◽  
Zhong-Tao Jiang ◽  
...  

Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 82 ◽  
Author(s):  
David K. Sang ◽  
Huide Wang ◽  
Meng Qiu ◽  
Rui Cao ◽  
Zhinan Guo ◽  
...  

Density functional theory calculations of the layer (L)-dependent electronic band structure, work function and optical properties of β-InSe have been reported. Owing to the quantum size effects (QSEs) in β-InSe, the band structures exhibit direct-to-indirect transitions from bulk β-InSe to few-layer β-InSe. The work functions decrease monotonically from 5.22 eV (1 L) to 5.0 eV (6 L) and then remain constant at 4.99 eV for 7 L and 8 L and drop down to 4.77 eV (bulk β-InSe). For optical properties, the imaginary part of the dielectric function has a strong dependence on the thickness variation. Layer control in two-dimensional layered materials provides an effective strategy to modulate the layer-dependent properties which have potential applications in the next-generation high performance electronic and optoelectronic devices.


2001 ◽  
Vol 666 ◽  
Author(s):  
Andreas Klein

ABSTRACTTransparent conductive oxides (TCOs) are generally considered as degenerate semiconductors doped intrinsically by oxygen vacancies and by intentionally added dopants. For some applications a high work function is required in addition to high conductivity and it is desired to tune both properties independently. To increase the work function, the distance between the Fermi energy and the vacuum level must increase, which can be realized either by electronic surface dipoles or by space charge layers. Photoelectron spectroscopy data of in-situ prepared samples clearly show that highly doped TCOs can show surface band bending of the order of 1 eV. It is further shown that the band alignment at heterointerfaces between TCOs and other materials, which are crucial for many devices, are also affected by such band bending. The origin of the band bending, which seems to be general to all TCOs, depends on TCO thin film and surface processing conditions. The implication of surface band bending on the electronic properties of thin films and interfaces are discussed.


Materials ◽  
2010 ◽  
Vol 3 (11) ◽  
pp. 4892-4914 ◽  
Author(s):  
Andreas Klein ◽  
Christoph Körber ◽  
André Wachau ◽  
Frank Säuberlich ◽  
Yvonne Gassenbauer ◽  
...  

2020 ◽  
Vol 8 (17) ◽  
pp. 8586-8592 ◽  
Author(s):  
Bo Zhang ◽  
Zhenyu Wang ◽  
Hongyang Huang ◽  
Lihui Zhang ◽  
Mengyue Gu ◽  
...  

The work function and band alignment of violet phosphorene are demonstrated, giving a practical route for heterojunction structure design.


2020 ◽  
Vol 22 (38) ◽  
pp. 21809-21815
Author(s):  
Wojciech Wegner ◽  
Kamil Tokár ◽  
Jose Lorenzana ◽  
Mariana Derzsi ◽  
Wojciech Grochala

The calculated work function of a powerful oxidizer, AgF2, is 7.76 eV, thus exceeds even that of fluorinated diamond. This unusual property could be used for fabrication of novel junction electronic devices showing ‘‘broken-gap’’ type band alignment.


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