scholarly journals High-performance perovskite CH3NH3PbI3 thin films for solar cells prepared by single-source physical vapour deposition

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Ping Fan ◽  
Di Gu ◽  
Guang-Xing Liang ◽  
Jing-Ting Luo ◽  
Ju-Long Chen ◽  
...  
Solar Energy ◽  
2018 ◽  
Vol 169 ◽  
pp. 179-186 ◽  
Author(s):  
Ping Fan ◽  
Huabin Lan ◽  
Zhuanghao Zheng ◽  
Chunfeng Lan ◽  
Huanxin Peng ◽  
...  

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Zhuang-Hao Zheng ◽  
Hua-Bin Lan ◽  
Zheng-Hua Su ◽  
Huan-Xin Peng ◽  
Jing-Ting Luo ◽  
...  

AbstractHybrid two-dimensional (2D) halide perovskites has been widely studied due to its potential application for high performance perovskite solar cells. Understanding the relationship between microstructural and opto-electronic properties is very important for fabricating high-performance 2D perovskite solar cell. In this work, the effect of solvent annealing on grain growth was investigated to enhance the efficiency of photovoltaic devices with 2D perovskite films based on (BA)2(MA)3Pb4I13 prepared by single-source thermal evaporation. Results show that solvent annealing with the introduction of solvent vapor can effectively enhance the crystallization of the (BA)2(MA)3Pb4I13 thin films and produce denser, larger-crystal grains. The thin films also display a favorable band gap of 1.896 eV, which benefits for increasing the charge-diffusion lengths. The solvent-annealed (BA)2(MA)3Pb4I13 thin-film solar cell prepared by single-source thermal evaporation shows an efficiency range of 2.54–4.67%. Thus, the proposed method can be used to prepare efficient large-area 2D perovskite solar cells.


Author(s):  
Yiqun Xiao ◽  
Jun Yuan ◽  
Guodong Zhou ◽  
Ka Chak Ngan ◽  
Xinxin Xia ◽  
...  

Researchers are endeavoring to decode the fundamental reasons for the non-fullerene acceptor, Y6, to deliver high-performance organic solar cells. In this manuscript, we tackle this problem from the molecular packing...


2006 ◽  
Vol 16 (10) ◽  
pp. 966-969 ◽  
Author(s):  
Shivram S. Garje ◽  
Jamie S. Ritch ◽  
Dana J. Eisler ◽  
Mohammad Afzaal ◽  
Paul O'Brien ◽  
...  

1999 ◽  
Vol 606 ◽  
Author(s):  
Mike R. Lazell ◽  
Paul O'brien ◽  
David J. Otway ◽  
Jin-Ho Park

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.


2018 ◽  
Vol 10 (31) ◽  
pp. 26206-26212 ◽  
Author(s):  
Meiqian Tai ◽  
Xingyue Zhao ◽  
Haoming Wei ◽  
Guang Wang ◽  
Feng Hao ◽  
...  

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