Average molecular orientations in the adsorbed water layers on silicon oxide in ambient conditions

2008 ◽  
Vol 10 (32) ◽  
pp. 4981 ◽  
Author(s):  
Anna L. Barnette ◽  
David B. Asay ◽  
Seong H. Kim

2001 ◽  
Author(s):  
Christopher J. Rothfuss ◽  
Valentin K. Medvedev ◽  
Eric M. Stuve


Nano Letters ◽  
2011 ◽  
Vol 11 (12) ◽  
pp. 5581-5586 ◽  
Author(s):  
Peigen Cao ◽  
Ke Xu ◽  
Joseph O. Varghese ◽  
James R. Heath




Langmuir ◽  
2004 ◽  
Vol 20 (19) ◽  
pp. 8379-8384 ◽  
Author(s):  
Antonio Tilocca ◽  
Annabella Selloni


2016 ◽  
Vol 39 ◽  
pp. 57-68
Author(s):  
Vikram Passi ◽  
Amit Gahoi ◽  
Sarah Riazimehr ◽  
Stefan Wagner ◽  
Andreas Bablich ◽  
...  

In this work, fabrication and characterisation of graphene photodiodes and transfer length method structures is presented. Graphene growth is carried out using a thermal chemical vapor deposition process on copper foils and subsequently transferred onto silicon-dioxide/silicon substrate. Comparison of electrical and optical characteristics of the photodiodes, which are fabricated on both n-type and p-type silicon, is shown. The photodiodes fabricated on n-type silicon show good rectifying behaviour when compared with photodiodes fabricated on p-type silicon. Spectral response of graphene photodiodes is measured to be less than 0.2 mAW-1 which is attributed to the light absorbance of 2.3% for single layer graphene. Transfer length method device structures are also fabricated and contact resistance is calculated and plotted as a function of spacing between the contacts. The calculated contact resistance (RcW) is 0.87 kΩ.µm. The latter structures are also characterised under various ambient conditions, before and after annealing. The value of contact resistance reduces from 0.87 kΩ.µm to 0.75 kΩ.µm after annealing. This reduction is attributed to the improvement in bonding between graphene and metal. Measurements under vacuum show an increase in contact resistance which is attributed to the removal of adsorbed water molecules on the surface on graphene. The sheet resistivity of graphene is calculated to be between 1.17 kΩ/□ and 3.67 kΩ/□.



Langmuir ◽  
2015 ◽  
Vol 31 (41) ◽  
pp. 11288-11295 ◽  
Author(s):  
Jens Laube ◽  
Samir Salameh ◽  
Michael Kappl ◽  
Lutz Mädler ◽  
Lucio Colombi Ciacchi


Author(s):  
David B. Asay ◽  
Michael T. Dugger ◽  
Seong H. Kim

This paper discusses the important role of gas adsorption in nanotribology and demonstrates in-situ vapor phase lubrication of microelectromechanical systems (MEMS) devices. We have elucidated the molecular ordering and thickness of the adsorbed water layer on the clean silicon oxide surface and found the molecular-level origin for the high adhesion between nano-asperity silicon oxide contacts in humid ambient. The same gas adsorption process can be utilized for continuous supply of lubricant molecules to form a few Å thick lubricant films on solid surfaces. Using alcohol vapor adsorption, we demonstrated that the adhesion, friction, and wear of the silicon oxide surface can significantly be reduced. This process made it possible to operate sliding MEMS without failure for an extended period of time.





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