A bright single layer non-doped orange-red light emitting diode using a symmetric starburst material via solution process

2010 ◽  
Vol 34 (9) ◽  
pp. 1994 ◽  
Author(s):  
Sheng Kong ◽  
Lixin Xiao ◽  
Yingliang Liu ◽  
Zhijian Chen ◽  
Bo Qu ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Red Light ◽  
Solution Process ◽  
Single Layer ◽  
Light Emitting

scholarly journals All-Inorganic Red-Light Emitting Diodes Based on Silicon Quantum Dots

Crystals ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 385
Author(s):  
Ghosh ◽  
Shirahata
Keyword(s):  
Prolonged Exposure ◽  
Crystalline Silicon ◽  
Light Emitting Diode ◽  
Red Light ◽  
Solution Process ◽  
Device Performance ◽  
Light Emitting ◽  
Device Architecture ◽  
Harsh Conditions ◽  
Inorganic Layers

We report herein an all-inorganic quantum dot light emitting diode (QLED) where an optically active layer of crystalline silicon (Si) is mounted. The prototype Si-QLED has an inverted device architecture of ITO/ZnO/QD/WO3/Al multilayer, which was prepared by a facile solution process. The QLED shows a red electroluminescence, an external quantum efficiency (EQE) of 0.25%, and luminance of 1400 cd/m2. The device performance stability has been investigated when the device faces different humidity conditions without any encapsulation. The advantage of using all inorganic layers is reflected in stable EQE even after prolonged exposure to harsh conditions.

scholarly journals Low temperature solution process-based defect-induced orange-red light emitting diode

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Pranab Biswas ◽  
Sung-Doo Baek ◽  
Sang Hoon Lee ◽  
Ji-Hyeon Park ◽  
Su Jeong Lee ◽  
...  
Keyword(s):  
Low Temperature ◽  
Light Emitting Diode ◽  
Red Light ◽  
Solution Process ◽  
Light Emitting ◽  
Temperature Solution

scholarly journals Red Light-Emitting Diodes with All-Inorganic CsPbI3/TOPO Composite Nanowires Color Conversion Films

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Lung-Chien Chen ◽  
Yi-Tsung Chang ◽  
Ching-Ho Tien ◽  
Yu-Chun Yeh ◽  
Zong-Liang Tseng ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diode ◽  
Red Light ◽  
Trioctylphosphine Oxide ◽  
Optical And Electrical Properties ◽  
Colloidal Solutions ◽  
High Quality ◽  
Light Emitting ◽  
Hot Injection ◽  
Color Conversion

AbstractThis work presents a method for obtaining a color-converted red light source through a combination of a blue GaN light-emitting diode and a red fluorescent color conversion film of a perovskite CsPbI3/TOPO composite. High-quality CsPbI3 quantum dots (QDs) were prepared using the hot-injection method. The colloidal QD solutions were mixed with different ratios of trioctylphosphine oxide (TOPO) to form nanowires. The color conversion films prepared by the mixed ultraviolet resin and colloidal solutions were coated on blue LEDs. The optical and electrical properties of the devices were measured and analyzed at an injection current of 50 mA; it was observed that the strongest red light intensity was 93.1 cd/m2 and the external quantum efficiency was 5.7% at a wavelength of approximately 708 nm when CsPbI3/TOPO was 1:0.35.

Effects of electron-withdrawing groups in imidazole-phenanthroline ligands and their influence on the photophysical properties of EuIII complexes for white light-emitting diodes

2017 ◽  
Vol 41 (18) ◽  
pp. 9826-9839 ◽  
Author(s):  
Boddula Rajamouli ◽  
Rachna Devi ◽  
Abhijeet Mohanty ◽  
Venkata Krishnan ◽  
Sivakumar Vaidyanathan
Keyword(s):  
Thin Film ◽  
Quantum Yield ◽  
White Light ◽  
Light Emitting Diode ◽  
Photophysical Properties ◽  
Red Light ◽  
Europium Complexes ◽  
Light Emitting ◽  
White Light Emitting Diodes ◽  
Phenanthroline Ligands

The red light emitting diode (LED) was fabricated by using europium complexes with InGaN LED (395 nm) and shown digital images, corresponding CIE color coordinates (red region) as well as obtained highest quantum yield of the thin film (78.7%).

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