High performance organic field-effect transistors based on single-crystal microribbons and microsheets of solution-processed dithieno[3,2-b:2′,3′-d]thiophene derivatives

2013 ◽  
Vol 49 (58) ◽  
pp. 6483 ◽  
Author(s):  
Yu Seok Yang ◽  
Takuma Yasuda ◽  
Hayato Kakizoe ◽  
Hiroyuki Mieno ◽  
Hiori Kino ◽  
...  
2008 ◽  
Vol 80 (11) ◽  
pp. 2405-2423 ◽  
Author(s):  
Xike Gao ◽  
Wenfeng Qiu ◽  
Yunqi Liu ◽  
Gui Yu ◽  
Daoben Zhu

In recent years, tetrathiafulvalene (TTF) and its derivatives have been used as semiconducting materials for organic field-effect transistors (OFETs). In this review, we summarize the recent progress in the field of TTF-based OFETs. We introduce the structure and operation of OFETs, and focus on TTF derivatives used in OFETs. TTF derivatives used in OFETs can be divided into three parts by the semiconductor's morphology and the device fabrication technique: (1) TTF derivatives used for single-crystal OFETs, (2) TTF derivatives used for vacuum-deposited thin-film OFETs, and (3) TTF derivatives used for solution-processed thin-film OFETs. The single-crystal OFETs based on TTF derivatives were fabricated by drop-casting method and showed high performance, with the mobility up to 1.4 cm2/Vs. The vacuum-deposited thin-film OFETs based on TTF derivatives were well developed, some of which have shown high performance comparable to that of amorphous silicon, with good air-stability. Although the mobilities of most solution-processed OFETs based on TTF derivatives are limited at 10-2 cm2/Vs, the study on solution-processable TTF derivatives and their devices are promising, because of their low-cost, large-area-coverage virtues. The use of organic charge-transfer (OCT) compounds containing TTF or its derivatives in OFETs is also included in this review.


2017 ◽  
Vol 53 (95) ◽  
pp. 12754-12757 ◽  
Author(s):  
Guang Lu ◽  
Xia Kong ◽  
Junshan Sun ◽  
Liangliang Zhang ◽  
Yanli Chen ◽  
...  

Single-crystal microsheets of a novel dimeric phthalocyanine are successfully obtained via a facile solution process with excellent carrier mobilities of 18 cm2 V−1 s−1 for hole and 0.3 cm2 V−1 s−1 for electron, respectively.


2019 ◽  
Vol 11 (37) ◽  
pp. 34188-34195 ◽  
Author(s):  
Hongming Chen ◽  
Xing Xing ◽  
Miao Zhu ◽  
Jupeng Cao ◽  
Muhammad Umair Ali ◽  
...  

2016 ◽  
Vol 8 (6) ◽  
pp. 3810-3824 ◽  
Author(s):  
Masanori Sawamoto ◽  
Myeong Jin Kang ◽  
Eigo Miyazaki ◽  
Hiroyoshi Sugino ◽  
Itaru Osaka ◽  
...  

Nanoscale ◽  
2017 ◽  
Vol 9 (29) ◽  
pp. 10178-10185 ◽  
Author(s):  
Subir Parui ◽  
Mário Ribeiro ◽  
Ainhoa Atxabal ◽  
Roger Llopis ◽  
Fèlix Casanova ◽  
...  

High-performance lateral and vertical organic field-effect transistors are demonstrated based on graphene electrodes and solution-processed N2200 polymers for advanced organic-electronics.


2015 ◽  
Vol 6 (32) ◽  
pp. 5884-5890 ◽  
Author(s):  
Shengxia Li ◽  
Linrun Feng ◽  
Jiaqing Zhao ◽  
Xiaojun Guo ◽  
Qing Zhang

Thermal cross-linking the bi-functional polymer thin-films at low temperature for gate dielectric application in solution processed organic field-effect transistors.


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