A facile route to Si nanowire gate-all-around field effect transistors with a steep subthreshold slope

Nanoscale ◽  
2013 ◽  
Vol 5 (19) ◽  
pp. 8968 ◽  
Author(s):  
Jae-Hyun Lee ◽  
Byung-Sung Kim ◽  
Soon-Hyung Choi ◽  
Yamujin Jang ◽  
Sung Woo Hwang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Subthreshold Slope ◽  
Si Nanowire ◽  
Facile Route ◽  
Steep Subthreshold Slope

Fabrication and Characterization of P-implanted Si-nanowire Field-effect Transistors (n-SiNW FETs)

2009 ◽  
Vol 55 (1) ◽  
pp. 28-31 ◽  
Author(s):  
Seung-Yong Lee ◽  
Chan-Oh Jang ◽  
Jung-Hwan Hyung ◽  
Dong-Joo Kim ◽  
Tae-Hong Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Si Nanowire ◽  
Fabrication And Characterization

Photocurrent transient variation in aligned Si nanowire field-effect transistors embedded with Au nanoparticles

2016 ◽  
Vol 109 (10) ◽  
pp. 103508
Author(s):  
Dong Zhang ◽  
Tao Kong ◽  
Miao Wang ◽  
Miao Xiao ◽  
Zhaochun Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
Au Nanoparticles ◽  
Field Effect Transistors ◽  
Si Nanowire
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