Retraction: “Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance” [Appl. Phys. Lett. 108, 103504 (2016)]

Oxide Semiconductor ◽

Negative Capacitance ◽

Subthreshold Slope

Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance

Applied Physics Letters ◽

10.1063/1.4943786 ◽

2016 ◽

Vol 108 (10) ◽

pp. 103504 ◽

Cited By ~ 15

Author(s):

Jae Hyo Park ◽

Seung Ki Joo

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Negative Capacitance ◽

Subthreshold Slope

Hybrid Design Using Metal-Oxide-Semiconductor Field-Effect Transistors and Negative-Capacitance Field-Effect Transistors for Analog Circuit Applications

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3043207 ◽

2020 ◽

pp. 1-7

Author(s):

Kaizhen Han ◽

Chen Sun ◽

Eugene Yu Jin Kong ◽

Ying Wu ◽

Chun-Huat Heng ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analog Circuit ◽

Oxide Semiconductor ◽

Hybrid Design ◽

Negative Capacitance

Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Cost Effective ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Electrical Characteristics

Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Inversion Channel

Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Heterostructure Field Effect Transistors

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

10.1143/jjap.46.2054 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2054-2057 ◽

Cited By ~ 21

Author(s):

Syunichi Watabe ◽

Shigetoshi Sugawa ◽

Akinobu Teramoto ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Evaluation Method ◽

Statistical Evaluation ◽

Oxide Semiconductor

Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature

Applied Physics Express ◽

10.7567/1882-0786/ab1b53 ◽

2019 ◽

Vol 12 (6) ◽

pp. 061003 ◽

Cited By ~ 1

Author(s):

Kidist Moges ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Gate Oxide ◽

Oxide Semiconductor ◽

Ultrahigh Temperature

4H-SiC Trench Metal Oxide Semiconductor Field Effect Transistors with Low On-Resistance

10.1143/jjap.48.04c100 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C100 ◽

Cited By ~ 9

Author(s):

Yuki Nakano ◽

Toshikazu Mukai ◽

Ryota Nakamura ◽

Takashi Nakamura ◽

Akira Kamisawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor

Dominant Device Instability Mechanism in Scaled Metal–Oxide–Semiconductor Field-Effect Transistors with Hafnium Oxide Dielectric

10.1143/jjap.48.091404 ◽

2009 ◽

Vol 48 (9) ◽

pp. 091404 ◽

Cited By ~ 2

Author(s):

Rino Choi ◽

Tea Wan Kim ◽

Hokyung Park ◽

Byoung Hun Lee

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Instability Mechanism