Carrier concentration dependent optical and electrical properties of Ga doped ZnO hexagonal nanocrystals

2015 ◽  
Vol 17 (24) ◽  
pp. 16067-16079 ◽  
Author(s):  
Manas Saha ◽  
Sirshendu Ghosh ◽  
Vishal Dev Ashok ◽  
S. K. De

Colloidal plasmonic Ga doped ZnO nanocrystals were synthesized and transparent highly conductive thin film was fabricated by spin casting.

2021 ◽  
Author(s):  
Chunhu Zhao ◽  
Junfeng Liu ◽  
Yixin Guo ◽  
Yanlin Pan ◽  
Xiaobo Hu ◽  
...  

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.


2015 ◽  
Vol 47 (12) ◽  
pp. 3655-3665
Author(s):  
Musbah Babikier ◽  
Qian Li ◽  
Jinzhong Wang ◽  
Dunbo Wang ◽  
Jianming Sun ◽  
...  

2009 ◽  
Vol 30 (3) ◽  
pp. 033001 ◽  
Author(s):  
Zhu Xiaming ◽  
Wu Huizhen ◽  
Wang Shuangjiang ◽  
Zhang Yingying ◽  
Cai Chunfeng ◽  
...  

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