Large grained single-crystalline-like germanium thin film on flexible Ni–W tape

RSC Advances ◽  
2014 ◽  
Vol 4 (40) ◽  
pp. 21042-21048 ◽  
Author(s):  
Pavel Dutta ◽  
Monika Rathi ◽  
Yao Yao ◽  
Ying Gao ◽  
Goran Majkic ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carrier Mobility ◽  
Low Cost ◽  
Single Crystalline ◽  
Metal Foils ◽  
Roll To Roll ◽  
High Carrier Mobility ◽  
High Carrier

Roll-to-roll growth of single-crystalline-like germanium thin films with high carrier mobility on low-cost flexible Ni–W metal foils has been demonstrated.

An all-organic "soft" thin film transistor with very high carrier mobility

1990 ◽  
Vol 2 (12) ◽  
pp. 592-594 ◽  
Author(s):  
Francis Garnier ◽  
Gilles Horowitz ◽  
Xuezhou Peng ◽  
Denis Fichou
Keyword(s):  
Thin Film ◽  
Carrier Mobility ◽  
Thin Film Transistor ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Soft Thin Film ◽  
Very High

Achieving high carrier mobility exceeding 70 cm2/Vs in amorphous zinc tin oxide thin-film transistors

2017 ◽  
Vol 13 (5) ◽  
pp. 406-411 ◽  
Author(s):  
Sang Tae Kim ◽  
Yeonwoo Shin ◽  
Pil Sang Yun ◽  
Jong Uk Bae ◽  
In Jae Chung ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Oxide Thin Film ◽  
Zinc Tin Oxide ◽  
High Carrier Mobility ◽  
High Carrier

Evolution of Nanocrystalline Silicon Layers Deposited at 150°C for Thin Film Transistor Channels

2003 ◽  
Vol 769 ◽  
Author(s):  
I-Chun Cheng ◽  
Steven Allen ◽  
Sigurd Wagner
Keyword(s):  
Thin Film ◽  
Carrier Mobility ◽  
Thin Film Transistor ◽  
Structural Evolution ◽  
Nanocrystalline Silicon ◽  
Crystalline Layer ◽  
Electron Field ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Made In

AbstractThin film transistors of nanocrystalline silicon (nc-Si:H) are made in the staggered topgate, bottom-source/drain geometry. To achieve both high carrier mobility and low off current, the nc-Si:H channel material must be kept thin but comprise a contiguous 10-nm thick crystalline layer at its top. We study this electrically most interesting top layer of the nc-Si:H channel film by AFM and SEM. Introducing an nc-Si:H seed layer underneath the TFT promotes the structural evolution of the nc-Si:H channel layer and raises the electron field effect mobility up to 40 cm2V-1s-1.

p-type conductive NiOx: Cu thin films with high carrier mobility deposited by ion beam assisted deposition

2018 ◽  
Vol 44 (3) ◽  
pp. 3291-3296 ◽  
Author(s):  
Hui Sun ◽  
Sheng-Chi Chen ◽  
Pei-Jie Chen ◽  
Sin-Liang Ou ◽  
Cheng-Yi Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Mobility ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
High Carrier Mobility ◽  
High Carrier ◽  
P Type

Well-Oriented Silicon Thin Films with High Carrier Mobility on Polycrystalline Substrates

2005 ◽  
Vol 17 (12) ◽  
pp. 1527-1531 ◽  
Author(s):  
A. T. Findikoglu ◽  
W. Choi ◽  
V. Matias ◽  
T. G. Holesinger ◽  
Q. X. Jia ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Mobility ◽  
Silicon Thin Films ◽  
High Carrier Mobility ◽  
High Carrier

A high carrier-mobility crystalline silicon film directly grown on polyimide using SiCl4/H2 microwave plasma for flexible thin film transistors

2015 ◽  
Vol 3 (28) ◽  
pp. 7513-7522 ◽  
Author(s):  
Ping-Yen Hsieh ◽  
Chi-Young Lee ◽  
Nyan-Hwa Tai
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Microwave Plasma ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Si Films

Flexible Si-TFTs with a high carrier mobility of 106 cm2 V−1 s−1 are fabricated using SiCl4/H2 microwave plasma for the preparation of crystalline Si films.

High carrier mobility in polycrystalline thin film diamond

1998 ◽  
Vol 72 (3) ◽  
pp. 353-355 ◽  
Author(s):  
Hui Jin Looi ◽  
Richard B. Jackman ◽  
John S. Foord
Keyword(s):  
Thin Film ◽  
Carrier Mobility ◽  
Polycrystalline Thin Film ◽  
High Carrier Mobility ◽  
High Carrier

scholarly journals Achieving High Thermoelectric Performance in Rare-Earth Element-Free CaMg2Bi2 with High Carrier Mobility and Ultralow Lattice Thermal Conductivity

Research ◽  
2020 ◽  
Vol 2020 ◽  
pp. 1-10 ◽  
Author(s):  
Muchun Guo ◽  
Fengkai Guo ◽  
Jianbo Zhu ◽  
Li Yin ◽  
Qian Zhang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Materials ◽  
Carrier Mobility ◽  
Lattice Thermal Conductivity ◽  
Low Cost ◽  
Thermoelectric Performance ◽  
Widespread Application ◽  
Compatibility Factor ◽  
High Carrier Mobility ◽  
High Carrier

CaMg2Bi2-based compounds, a kind of the representative compounds of Zintl phases, have uniquely inherent layered structure and hence are considered to be potential thermoelectric materials. Generally, alloying is a traditional and effective way to reduce the lattice thermal conductivity through the mass and strain field fluctuation between host and guest atoms. The cation sites have very few contributions to the band structure around the fermi level; thus, cation substitution may have negligible influence on the electric transport properties. What is more, widespread application of thermoelectric materials not only desires high ZT value but also calls for low-cost and environmentally benign constituent elements. Here, Ba substitution on cation site achieves a sharp reduction in lattice thermal conductivity through enhanced point defects scattering without the obvious sacrifice of high carrier mobility, and thus improves thermoelectric properties. Then, by combining further enhanced phonon scattering caused by isoelectronic substitution of Zn on the Mg site, an extraordinarily low lattice thermal conductivity of 0.51 W m-1 K-1 at 873 K is achieved in (Ca0.75Ba0.25)0.995Na0.005Mg1.95Zn0.05Bi1.98 alloy, approaching the amorphous limit. Such maintenance of high mobility and realization of ultralow lattice thermal conductivity synergistically result in broadly improvement of the quality factor β. Finally, a maximum ZT of 1.25 at 873 K and the corresponding ZTave up to 0.85 from 300 K to 873 K have been obtained for the same composition, meanwhile possessing temperature independent compatibility factor. To our knowledge, the current ZTave exceeds all the reported values in AMg2Bi2-based compounds so far. Furthermore, the low-cost and environment-friendly characteristic plus excellent thermoelectric performance also make the present Zintl phase CaMg2Bi2 more competitive in practical application.

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