An all-organic "soft" thin film transistor with very high carrier mobility

1990 ◽  
Vol 2 (12) ◽  
pp. 592-594 ◽  
Author(s):  
Francis Garnier ◽  
Gilles Horowitz ◽  
Xuezhou Peng ◽  
Denis Fichou
2003 ◽  
Vol 769 ◽  
Author(s):  
I-Chun Cheng ◽  
Steven Allen ◽  
Sigurd Wagner

AbstractThin film transistors of nanocrystalline silicon (nc-Si:H) are made in the staggered topgate, bottom-source/drain geometry. To achieve both high carrier mobility and low off current, the nc-Si:H channel material must be kept thin but comprise a contiguous 10-nm thick crystalline layer at its top. We study this electrically most interesting top layer of the nc-Si:H channel film by AFM and SEM. Introducing an nc-Si:H seed layer underneath the TFT promotes the structural evolution of the nc-Si:H channel layer and raises the electron field effect mobility up to 40 cm2V-1s-1.


1993 ◽  
Vol 63 (10) ◽  
pp. 1372-1374 ◽  
Author(s):  
H. Fuchigami ◽  
A. Tsumura ◽  
H. Koezuka

2017 ◽  
Vol 13 (5) ◽  
pp. 406-411 ◽  
Author(s):  
Sang Tae Kim ◽  
Yeonwoo Shin ◽  
Pil Sang Yun ◽  
Jong Uk Bae ◽  
In Jae Chung ◽  
...  

2015 ◽  
Vol 3 (28) ◽  
pp. 7513-7522 ◽  
Author(s):  
Ping-Yen Hsieh ◽  
Chi-Young Lee ◽  
Nyan-Hwa Tai

Flexible Si-TFTs with a high carrier mobility of 106 cm2 V−1 s−1 are fabricated using SiCl4/H2 microwave plasma for the preparation of crystalline Si films.


1998 ◽  
Vol 72 (3) ◽  
pp. 353-355 ◽  
Author(s):  
Hui Jin Looi ◽  
Richard B. Jackman ◽  
John S. Foord

2004 ◽  
Vol 828 ◽  
Author(s):  
Woosuck Shin ◽  
Kazuki Tajima ◽  
Yeongsoo Choi ◽  
Noriya Izu ◽  
Ichiro Matsubara ◽  
...  

ABSTRACTA gas sensor micro-device using both thermoelectric film and catalyst film has been developed on the platform of micro-hotplate. Thermoelectric thin film of B-doped SiGe was deposited on the Si3N4/SiO2/Si substrate by helicon sputtering method and thermal annealing was carried out to crystallize the as-deposited amorphous-like film. With increasing the annealing temperature and time, the crystallization of the SiGe thin film progressed, resulting in high carrier mobility and large absolute value of Seebeck coefficient. The hydrogen sensitivity of the micro-thermoelectric gas sensors was investigated.


2017 ◽  
Vol 7 (23) ◽  
pp. 5608-5613 ◽  
Author(s):  
Ning Wang ◽  
Min Liu ◽  
Junhui Liang ◽  
Tiantian Li ◽  
Hairen Tan ◽  
...  

Photovoltaic–photoelectrochemical (PV-PEC) water splitting based on silicon (Si) is very promising because of its broad visible light absorption, earth abundance and high carrier mobility.


2007 ◽  
Vol 54 (6) ◽  
pp. 1438-1445 ◽  
Author(s):  
Akinobu Teramoto ◽  
Tatsufumi Hamada ◽  
Masashi Yamamoto ◽  
Philippe Gaubert ◽  
Hiroshi Akahori ◽  
...  

RSC Advances ◽  
2014 ◽  
Vol 4 (40) ◽  
pp. 21042-21048 ◽  
Author(s):  
Pavel Dutta ◽  
Monika Rathi ◽  
Yao Yao ◽  
Ying Gao ◽  
Goran Majkic ◽  
...  

Roll-to-roll growth of single-crystalline-like germanium thin films with high carrier mobility on low-cost flexible Ni–W metal foils has been demonstrated.


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