A cross-dipole stacking molecule of an anthracene derivative: integrating optical and electrical properties

2015 ◽  
Vol 3 (13) ◽  
pp. 3068-3071 ◽  
Author(s):  
Jie Liu ◽  
Lingqiang Meng ◽  
Weigang Zhu ◽  
Congcong Zhang ◽  
Hantang Zhang ◽  
...  
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Anthracene Derivative ◽  
Semiconducting Properties ◽  
State Luminescence

The present work showed the synthesis of a cross stacking molecule. And both semiconducting properties and solid state luminescence were achieved for its micro/nano fibers.

Optical and Electrical Properties of Nitrogen Doped a-Si:H Films for Solid State Image Pickup Devices

1981 ◽  
Author(s):  
Y. Shimomoto ◽  
Y. Tanaka ◽  
H. Yamamoto ◽  
S. Takasaki ◽  
T. Baji ◽  
...  
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Nitrogen Doped

Optical and Electrical Properties of Nitrogen Doped a-Si: H Films for Solid-State Image Pickup Devices

1982 ◽  
Vol 21 (S1) ◽  
pp. 263 ◽  
Author(s):  
Yasuharu Shimomoto ◽  
Yasuo Tanaka ◽  
Hideaki Yamamoto ◽  
Yukio Takasaki ◽  
Akira Sasano ◽  
...  
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Nitrogen Doped

Effect of Ag Doping on Structural, Optical and Electrical Properties of SnS:Ag Thin Films Prepared by Pulse Electroposition

2009 ◽  
Vol 60-61 ◽  
pp. 105-109 ◽  
Author(s):  
Yong Li Yang ◽  
Shu Ying Cheng ◽  
Song Lin Lai
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Silver Doping ◽  
Electro Deposition ◽  
Ag Doping ◽  
Semiconducting Properties ◽  
Primary Composition ◽  
High Absorption Coefficient ◽  
P Type

Silver-doping in SnS films can improve the semiconducting properties of SnS films. Based on our previous research, SnS:Ag thin films were deposited on ITO coated glass by pulse electro-deposition in order to study their structural, optical and electrical properties. SnS:Ag thin films were characterized with X-ray diffraction (XRD) , Scanning Electron Microscope (SEM) and some other methods. The primary composition of the films is SnS, but maybe there is a little quantity of SnS2, Ag8SnS6 and other compounds. The doped films exhibit good crystallization with big grain size. They have an optical gap of 1.66~1.89eV and a high absorption coefficient (α＞5×104cm-1). Hall measurement has shown that all the samples are of p-type conduction with low resistivity of the order of 10-3Ω•cm, and the carrier concentration increases to 1019cm-3 after Ag-doping. In conclusion, the semiconducting properties of the SnS films have been improved by silver-doping. Thus, SnS:Ag thin films can be used as solar cells absorbers.

Extremely Thin Absorber Layers in Solid State Solar Cells

2004 ◽  
Vol 822 ◽  
Author(s):  
A. Bellaidi ◽  
K. Ernst ◽  
R. Könenkamp
Keyword(s):  
Solid State ◽  
Electrical Properties ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Optical And Electrical Properties ◽  
Transfer Rates ◽  
Ideal Tool ◽  
Extremely Thin Absorber

AbstractWe report on recent progress in fabricating an inorganic solid state solar cell based on a nano-structured substrate with an extremely thin absorber, the so-called eta-cell. The cell uses HgCdTe as an absorber layer and TiO2 as a substrate. By adjusting the Hg/Cd ratio the conduction band edges in these two materials can be brought into alignment. This tuning provides an ideal tool to optimize the optical and electrical properties of the cell. In qualitative agreement with earlier work we find a band offset of 0.25 eV to give maximum transfer rates across the interface. The optimized cell has a short circuit current of 15 mA/cm2 and an open-circuit voltage of 0.6 V. We discuss the optical and electrical properties of the cell, and outline ideas to further improve the performance.

Reactivity of azides in the solid state. II. Physical and optical properties, and photochemical decomposition of mercurous azide and triphenyl methyl azide

1960 ◽  
Vol 256 (1287) ◽  
pp. 528-539 ◽  
Keyword(s):  
Activation Energy ◽  
Optical Properties ◽  
Solid State ◽  
Electrical Properties ◽  
Light Intensity ◽  
Surface Area ◽  
Optical And Electrical Properties ◽  
Azide Group ◽  
Photochemical Decomposition

A study has been made of the photolysis of mercurous azide and triphenyl methyl azide in the solid state. The decomposition has been followed as a function of light intensity, surface area, and temperature. The activation energy for photochemical decomposition is 0⋅37 eV for mercurous azide and 0⋅38 eV for triphenyl methyl azide. A number of the physical, optical and electrical properties of mercurous azide have been measured and the results obtained are consistent with a covalent-type solid. It is suggested that the first step in the decomposition of both these covalent azides is bond fission at the longest N—N bond in the azide group. The behaviour of the covalent azides is compared with that of the ionic azides described in part I.

Understanding the solid state luminescence and piezochromic properties in polymorphs of an anthracene derivative.

2022 ◽  
Author(s):  
Rachel Crespo-Otero ◽  
Alex Aziz ◽  
Amir Sidat ◽  
Priyesh Talati
Keyword(s):  
Solid State ◽  
Condensed Phase ◽  
Molecular Crystals ◽  
Research Interest ◽  
Anthracene Derivative ◽  
Significant Research ◽  
Optoelectronic Applications ◽  
External Stimuli ◽  
State Luminescence

Luminescent molecular crystals have gained significant research interest for optoelectronic applications. However, fully understanding their structural and electronic relationships in the condensed phase and under external stimuli remains a significant...

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