High Mobility n-Channel Organic Field-Effect Transistor Based a Tetratetracontane Interfacial Layer on Gate Dielectrics

2016 ◽  
Vol 37 (12) ◽  
pp. 1632-1635 ◽  
Author(s):  
Lanyi Xiang ◽  
Jun Ying ◽  
Wei Wang ◽  
Wenfa Xie
Keyword(s):  
Interfacial Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (11) ◽  
pp. 2370-2373 ◽  
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Active Materials ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Ambipolar OFETs based on AIE-active materials were demonstrated to have a high and balanced mobility level of 2.0 cm2 V−1 s−1.

Organic field-effect transistor circuits using atomic layer deposited gate dielectrics patterned by reverse stamping

2014 ◽  
Vol 15 (12) ◽  
pp. 3780-3786 ◽  
Author(s):  
Sangmoo Choi ◽  
Canek Fuentes-Hernandez ◽  
Minseong Yun ◽  
Amir Dindar ◽  
Talha M. Khan ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Organic Field Effect Transistor ◽  
Transistor Circuits ◽  
Effect Transistor

scholarly journals Correction: An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1

2016 ◽  
Vol 52 (12) ◽  
pp. 2647-2647
Author(s):  
Jian Deng ◽  
Yuanxiang Xu ◽  
Liqun Liu ◽  
Cunfang Feng ◽  
Jia Tang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Correction for ‘An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1’ by Jian Deng et al., Chem. Commun., 2016, DOI: 10.1039/c5cc09702a.

Organic field-effect transistor based sensors with sensitive gate dielectrics used for low-concentration ammonia detection

2013 ◽  
Vol 14 (2) ◽  
pp. 500-504 ◽  
Author(s):  
Andreas Klug ◽  
Martin Denk ◽  
Thomas Bauer ◽  
Martina Sandholzer ◽  
Ullrich Scherf ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectrics ◽  
Organic Field Effect Transistor ◽  
Low Concentration ◽  
Ammonia Detection ◽  
Effect Transistor
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