Chemical vapor deposition growth of few-layer graphene for transparent conductive films

RSC Advances ◽  
2015 ◽  
Vol 5 (55) ◽  
pp. 44142-44148 ◽  
Author(s):  
Jun Pu ◽  
Lei Tang ◽  
Chaowei Li ◽  
Taotao Li ◽  
Lin Ling ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Conductive Films ◽  
Layer Graphene ◽  
Pressure Chemical ◽  
Few Layer Graphene ◽  
Etching Effect

The facile and scalable technique is demonstrated, which grow graphene with controllable layers on copper foil substrates using the etching effect of H2 in atmospheric pressure chemical vapor deposition (APCVD).

scholarly journals Preperetions of bi-layer and multi-layer graphene on copper substrates by atmospheric pressure chemical vapor deposition and their mechanisms

2017 ◽  
Vol 66 (5) ◽  
pp. 058101
Author(s):  
Li Hao ◽  
Fu Zhi-Bing ◽  
Wang Hong-Bin ◽  
Yi Yong ◽  
Huang Wei ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Layer Graphene ◽  
Pressure Chemical

Fully reproducible, low-temperature synthesis of high-quality, few-layer graphene on nickel via preheating of gas precursors using atmospheric pressure chemical vapor deposition

2014 ◽  
Vol 2 (46) ◽  
pp. 19750-19758 ◽  
Author(s):  
Miriam Somekh ◽  
Efrat Shawat ◽  
Gilbert D. Nessim
Keyword(s):  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
High Quality ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Nickel Thin Films ◽  
Layer Graphene ◽  
Pressure Chemical ◽  
Few Layer Graphene

By preheating the precursor gases (ethylene and hydrogen), we synthesized high-quality, few-layer graphene at reduced temperatures with full reproducibility on nickel thin films.

scholarly journals Influence of growth kinetics on graphene domains shape under atmospheric pressure chemical vapor deposition

2020 ◽  
Vol 5 (3-4) ◽  
pp. 75-81
Author(s):  
Mopeli Samuel Fabiane ◽  
Moshawe Jack Madito ◽  
Ncholu Manyala
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Single Layer ◽  
Chemical Vapor ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Pressure Chemical ◽  
Cu Foil

Abstract In this work, the role of gas kinetics in the growth of lobed graphene domains by atmospheric pressure chemical vapor deposition (AP-CVD) is elucidated by sandwiching Cu foil between Si/SiO2 wafers. Two different growths were carried out: (1) A Cu foil was placed at the center of a quartz tube in AP-CVD for graphene growth and (2) another Cu foil was sandwiched between Si/SiO2 wafers to alter the nucleation growth kinetics of graphene domains to mimic those in low-pressure chemical vapor deposition (LP-CVD). From the scanning electron microscopy (SEM) images, the graphene domains of the sandwiched Cu foil displayed mostly four-lobed, parallel-sided domains which are usually obtained under LP-CVD as compared to Cu foil without sandwiching which showed typical hexagonal graphene domains of AP-CVD. The Raman spectroscopy confirmed that the domains are single-layer graphene. An electron backscatter diffraction (EBSD) showed that the Cu foil is predominantly (001). The results of this study agree with the theoretical predictions of growth kinetics in graphene synthesis by CVD and showed that it is possible to obtain single-layer graphene domains which are usually obtained under LP-CVD by restricting the gas flux through the boundary layer. Graphic abstract

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